Patents by Inventor Kentaro SUGAYA
Kentaro SUGAYA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240154039Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.Type: ApplicationFiled: January 4, 2024Publication date: May 9, 2024Inventors: Shunpei YAMAZAKI, Katsuaki TOCHIBAYASHI, Ryota HODO, Kentaro SUGAYA, Naoto YAMADE
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Patent number: 11962202Abstract: A motor includes a shaft, a rotor, a stator including a coil and opposed to the rotor, and a bearing configured to support the shaft. In addition, the motor further includes a first temperature sensor disposed farther toward an outer periphery side than the coil, and a second temperature sensor disposed farther toward an inner periphery side than the coil.Type: GrantFiled: July 14, 2022Date of Patent: April 16, 2024Assignee: MINEBEA MITSUMI Inc.Inventors: Kouji Kebukawa, Kentaro Suzuki, Wataru Nogamida, Yoshihisa Okabuchi, Takayuki Sugaya, Takahiro Saito
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Publication number: 20240088232Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Inventors: Kosei NEI, Tsutomu MURAKAWA, Toshihiko TAKEUCHI, Kentaro SUGAYA
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Patent number: 11881513Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor.Type: GrantFiled: April 16, 2019Date of Patent: January 23, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kosei Nei, Tsutomu Murakawa, Toshihiko Takeuchi, Kentaro Sugaya
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Patent number: 11869979Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.Type: GrantFiled: April 22, 2022Date of Patent: January 9, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Katsuaki Tochibayashi, Ryota Hodo, Kentaro Sugaya, Naoto Yamade
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Patent number: 11817507Abstract: A semiconductor device having a high on-state current is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.Type: GrantFiled: February 9, 2022Date of Patent: November 14, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tsutomu Murakawa, Hiroki Komagata, Katsuaki Tochibayashi, Kentaro Sugaya
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Publication number: 20230200198Abstract: To provide a light-emitting element in which an organic compound layer can be processed at once by a photolithography technique. A first electrode and an organic compound layer including an electron-injection layer are formed over an insulating surface. The electron-injection layer is the outermost layer of the organic compound layer and contains an organic compound having a basic skeleton and an acid dissociation constant pKa of greater than or equal to 1. A sacrificial layer and a mask are formed over the electron-injection layer and the sacrificial layer is processed into an island shape using the mask. With use of the island-shaped sacrificial layer as a mask, the organic compound layer is processed into an island shape to cover the first electrode. Part of the island-shaped sacrificial layer is removed with an acidic chemical solution to expose the electron-injection layer. A second electrode is formed to cover the electron-injection layer.Type: ApplicationFiled: December 13, 2022Publication date: June 22, 2023Inventors: Shunpei YAMAZAKI, Sachiko KAWAKAMI, Nobuharu OHSAWA, Yuji IWAKI, Ryota HODO, Kentaro SUGAYA, Shinya SASAGAWA, Takahiro FUJIE, Yoshikazu HIURA, Toshiki SASAKI, Takeyoshi WATABE, Kunihiko SUZUKI
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Publication number: 20230047805Abstract: A semiconductor device with a high on-state current is provided. An oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; an interlayer insulating film positioned to cover the oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the oxide semiconductor film; a barrier insulating film over the oxide semiconductor film; and a gate electrode over the gate insulating film are included. The barrier insulating film is positioned between the source electrode and the gate insulating film and between the drain electrode and the gate electrode. An opening is formed in the interlayer insulating film so as to overlap with a region between the source electrode and the drain electrode. The barrier insulating film, the gate insulating film, and the gate electrode are positioned in the opening of the interlayer insulating film.Type: ApplicationFiled: January 7, 2021Publication date: February 16, 2023Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryota HODO, Katsuaki TOCHIBAYASHI, Kentaro SUGAYA
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Publication number: 20220271169Abstract: A semiconductor device having a high on-state current is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.Type: ApplicationFiled: February 9, 2022Publication date: August 25, 2022Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Tsutomu MURAKAWA, Hiroki KOMAGATA, Katsuaki TOCHIBAYASHI, Kentaro SUGAYA
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Publication number: 20220271168Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.Type: ApplicationFiled: July 13, 2020Publication date: August 25, 2022Inventors: Shunpei YAMAZAKI, Shinya SASAGAWA, Ryota HODO, Takashi HIROSE, Yoshihiro KOMATSU, Katsuaki TOCHIBAYASHI, Kentaro SUGAYA
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Patent number: 11417773Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor is provided in contact with a top surface of the first oxide. The second conductor is provided in contact with the top surface of the first oxide. The first insulator is provided over the first conductor and the second conductor. The second oxide is provided in contact with the top surface of the first oxide. The second insulator is provided over the second oxide. The third conductor is provided over the second insulator. The first insulator has a function of inhibiting diffusion of oxygen. The first oxide includes indium, an element M (M is gallium, yttrium, or tin), and zinc. The first oxide includes a first region overlapping with the third conductor.Type: GrantFiled: May 14, 2019Date of Patent: August 16, 2022Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Erika Takahashi, Hiroaki Honda, Kentaro Sugaya, Shinya Sasagawa
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Publication number: 20220246765Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.Type: ApplicationFiled: April 22, 2022Publication date: August 4, 2022Inventors: Shunpei YAMAZAKI, Katsuaki TOCHIBAYASHI, Ryota HODO, Kentaro SUGAYA, Naoto YAMADE
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Publication number: 20220199832Abstract: A semiconductor device with small variations in transistor characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor provided apart from each other over the oxide; an insulator in a region between the first conductor and the second conductor over the oxide; and a conductor over the insulator. A side surface of the oxide, a top surface of the first conductor, a side surface of the first conductor, a top surface of the second conductor, and a side surface of the second conductor include regions in contact with a nitride containing silicon.Type: ApplicationFiled: May 12, 2020Publication date: June 23, 2022Inventors: Shunpei YAMAZAKI, Ryota HODO, Katsuaki TOCHIBAYASHI, Hiroaki HONDA, Kentaro SUGAYA
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Patent number: 11316051Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.Type: GrantFiled: February 21, 2019Date of Patent: April 26, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Katsuaki Tochibayashi, Ryota Hodo, Kentaro Sugaya, Naoto Yamade
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Patent number: 11257959Abstract: A semiconductor device having a high on-state current is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.Type: GrantFiled: November 28, 2018Date of Patent: February 22, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tsutomu Murakawa, Hiroki Komagata, Katsuaki Tochibayashi, Kentaro Sugaya
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Publication number: 20220020881Abstract: A semiconductor device having favorable electrical characteristics is provided.Type: ApplicationFiled: November 21, 2019Publication date: January 20, 2022Inventors: Shunpei YAMAZAKI, Kentaro SUGAYA, Ryota HODO, Kenichiro MAKINO, Shuhei NAGATSUKA
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Patent number: 11133420Abstract: A semiconductor device with high on-state current is provided.Type: GrantFiled: December 19, 2018Date of Patent: September 28, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Iida, Ryota Hodo, Kentaro Sugaya, Ryu Komatsu, Toshiya Endo, Shunpei Yamazaki
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Publication number: 20210242345Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor is provided in contact with a top surface of the first oxide. The second conductor is provided in contact with the top surface of the first oxide. The first insulator is provided over the first conductor and the second conductor. The second oxide is provided in contact with the top surface of the first oxide. The second insulator is provided over the second oxide. The third conductor is provided over the second insulator. The first insulator has a function of inhibiting diffusion of oxygen. The first oxide includes indium, an element M (M is gallium, yttrium, or tin), and zinc. The first oxide includes a first region overlapping with the third conductor.Type: ApplicationFiled: May 14, 2019Publication date: August 5, 2021Inventors: Shunpei YAMAZAKI, Erika TAKAHASHI, Hiroaki HONDA, Kentaro SUGAYA, Shinya SASAGAWA
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Publication number: 20210167174Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor.Type: ApplicationFiled: April 16, 2019Publication date: June 3, 2021Inventors: Kosei NEI, Tsutomu MURAKAWA, Toshihiko TAKEUCHI, Kentaro SUGAYA
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Publication number: 20200388710Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.Type: ApplicationFiled: February 21, 2019Publication date: December 10, 2020Inventors: Shunpei YAMAZAKI, Katsuaki TOCHIBAYASHI, Ryota HODO, Kentaro SUGAYA, Naoto YAMADE