Patents by Inventor Kentaro Tada
Kentaro Tada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240094585Abstract: According to one embodiment, a display device including a first substrate including a first pixel and a second pixel, a second substrate, a liquid crystal layer containing polymer and liquid crystal molecules, and a light emitting element, wherein the second pixel is located between the light emitting element and the first pixel, the first substrate includes a switching element including a semiconductor layer arranged in the first pixel, a pixel electrode, and a first light shielding portion arranged in the second pixel and being adjacent to the semiconductor layer, the first light shielding portion is located between the semiconductor layer and the light emitting element in planar view and located on a side closer to the first pixel than a center of the second pixel.Type: ApplicationFiled: November 22, 2023Publication date: March 21, 2024Inventors: Kentaro OKUYAMA, Yoshihide OHUE, Hiroki SUGIYAMA, Tomoyuki TADA
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Patent number: 11934057Abstract: According to one embodiment, a display device includes a first substrate, a second substrate, a liquid crystal layer including polymers and liquid crystal molecules, and a light-emitting element. The first substrate includes a transparent substrate, a scanning line, a signal line crossing the scanning line, a switching element electrically connected to the scanning line and the signal line, an organic insulating film overlapping the switching element, and a pixel electrode electrically connected to the switching element. A thickness of the organic insulating film located between the transparent substrate and the pixel electrode is less than a thickness of the organic insulating film overlapping the switching element.Type: GrantFiled: December 12, 2022Date of Patent: March 19, 2024Assignee: Japan Display Inc.Inventors: Kentaro Okuyama, Yoshihide Ohue, Hiroki Sugiyama, Tomoyuki Tada
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Publication number: 20230289687Abstract: A replacement support apparatus is provided for supporting replacement of a plurality of electronic apparatuses each including a plurality of device components. The replacement support apparatus is provided with: a communication circuit, a storage, a processing circuit, and an output device. The communication circuit receives, from a plurality of existing electronic apparatuses, operation information indicating operation conditions of the device components during operation of the existing electronic apparatuses. The storage stores specifications information indicating specifications of new electronic apparatuses as replacement candidates.Type: ApplicationFiled: February 17, 2023Publication date: September 14, 2023Inventors: Masashi SETO, Akira AMANO, Mitsuyoshi MATSUMOTO, Miyu MIYAJIMA, Masato TANAKA, Junya KAMIJIMA, Masakazu MATSUMOTO, Kentaro TADA, Tomoyuki SHIMOMURA
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Patent number: 8519504Abstract: In an n-type semiconductor layer that contains gallium (Ga), contact resistance is to be suppressed at a low level. An n-side electrode is provided on a surface of the n-type semiconductor layer containing Ga. The electrode includes a metal layer having a Ga content of equal to or more than 1 at % and equal to or less than 25 at %. The metal layer is disposed in contact with the n-type semiconductor layer.Type: GrantFiled: May 4, 2009Date of Patent: August 27, 2013Assignee: Renesas Electronics CorporationInventor: Kentaro Tada
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Patent number: 8450130Abstract: Provided is a semiconductor laser, wherein (?a??w)>15 (nm) and Lt<25 (?m), where ?w is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 ?m from one end surface in a resonator direction, ?a is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and ?( 7/10)L from the one end surface in a resonator direction, “L” is the resonator length, and “Lt” is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of ?w+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of ?a?2 (nm) in the resonator direction.Type: GrantFiled: June 19, 2012Date of Patent: May 28, 2013Assignee: Renesas Electronics CorporationInventors: Kentaro Tada, Kenji Endo, Kazuo Fukagai, Tetsuro Okuda, Masahide Kobayashi
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Publication number: 20120258558Abstract: Provided is a semiconductor laser, wherein (?a??w) >15 (nm) and Lt<25 (?m), where ?w is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 ?m from one end surface in a resonator direction, ?a is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and ?( 7/10)L from the one end surface in a resonator direction, “L” is the resonator length, and “Lt” is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of ?w+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of ?a?2 (nm) in the resonator direction.Type: ApplicationFiled: June 19, 2012Publication date: October 11, 2012Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Kentaro TADA, Kenji ENDO, Kazuo FUKAGAI, Tetsuro OKUDA, Masahide KOBAYASHI
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Patent number: 8228966Abstract: Provided is a semiconductor laser, wherein (?a??w)>15 (nm) and Lt<25 (?m), where ?w is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 ?m from one end surface in a resonator direction, ?a is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and <( 7/10)L from the one end surface in a resonator direction, “L” is the resonator length, and “Lt” is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of ?w+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of ?a?2 (nm) in the resonator direction.Type: GrantFiled: February 23, 2010Date of Patent: July 24, 2012Assignee: Renesas Electronics CorporationInventors: Kentaro Tada, Kenji Endo, Kazuo Fukagai, Tetsuro Okuda, Masahide Kobayashi
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Publication number: 20100220759Abstract: Provided is a semiconductor laser, wherein (?a??w)>15 (nm) and Lt<25 (?m), where ?w is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 ?m from one end surface in a resonator direction, ?a is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and <( 7/10)L from the one end surface in a resonator direction, “L” is the resonator length, and “Lt” is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of ?w+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of ?a?2 (nm) in the resonator direction.Type: ApplicationFiled: February 23, 2010Publication date: September 2, 2010Applicant: NEC ELECTRONICS CORPORATIONInventors: Kentaro TADA, Kenji ENDO, Kazuo FUKAGAI, Tetsuro OKUDA, Masahide KOBAYASHI
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Patent number: 7715367Abstract: An IP telephone system includes an IP telephone apparatus, a Web server and an ENUM server. The IP telephone apparatus is connected to an IP network. The Web server registers talk volume information corresponding to a telephone number assigned to the IP telephone apparatus. The ENUM server registers a NAPTR resource record in which a URI specifies link data related to the talk volume information registered in the Web server. In the IP telephone system, the IP telephone apparatus that has received a call transmits, to the ENUM server, a query for a NAPTR record corresponding to a targeted recipient phone number. The IP telephone apparatus then transmits, to the Web server, a request for the talk volume information corresponding to the targeted recipient phone number according to the returned NAPTR resource record, and adjusts the talk volume according to the returned talk volume information.Type: GrantFiled: July 19, 2005Date of Patent: May 11, 2010Assignee: PANASONIC CorporationInventors: Toshiko Nishida, Kazuto Kobayashi, Akira Miyajima, Kentaro Tada, Kiyoshi Toyoda
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Patent number: 7687598Abstract: An object of the invention is to provide a novel dendrimer serving as an organic semiconductor material which is isotropic and which exhibits remarkably high carrier conductivity. Another object of the invention is to provide an electronic device employing the dendrimer. These objects are attained by a dendrimer having a branching structure in which repeating units each having a branch portion are repeatedly linked through the divergent method or the convergent method, each of said repeating units having a structure represented by formula (1), and containing a linear portion X formed of an optionally substituted divalent organic group and a branch portion Y formed of an optionally substituted trivalent organic group: characterized in that the linear portion X contains at least one thienylene moiety and is at least partially conjugated with the branch portion Y.Type: GrantFiled: July 14, 2003Date of Patent: March 30, 2010Assignee: Sharp Kabushiki KaishaInventors: Motohiro Yamahara, Satoru Obara, Kentaro Tada
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Publication number: 20100034231Abstract: A semiconductor laser, which emits a laser beam from an edge surface of an active layer (5), is provided with a protective film (20), arranged on the edge surface from which the laser beam is emitted, and formed of a single-layer or a multilayer dielectric film. Hydrogen concentration distribution in the protective film (20) is approximately flat. The active layer (5) is formed of a group-III nitride semiconductor including Ga as a constituent element. The protective film (20) is formed of at least a first protective film (21) that is in direct contact with an edge surface of the active layer (5), and a second protective film (22) that is in contact with the first protective film (21). A ratio of hydrogen concentration of the first protective film (21) with respect to hydrogen concentration of the second protective film (22) is not less than 0.5 and not more than 2.Type: ApplicationFiled: August 4, 2009Publication date: February 11, 2010Applicant: NEC Electronics CorporationInventors: Kazuhisa FUKUDA, Chiaki SASAOKA, Kentaro TADA, Toshiaki IGARASHI, Fumito MIYASAKA, Keiro KOMATSU
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Publication number: 20090302470Abstract: In an n-type semiconductor layer that contains gallium (Ga), contact resistance is to be suppressed at a low level. An n-side electrode is provided on a surface of the n-type semiconductor layer containing Ga. The electrode includes a metal layer having a Ga content of equal to or more than 1 at % and equal to or less than 25 at %. The metal layer is disposed in contact with the n-type semiconductor layer.Type: ApplicationFiled: May 4, 2009Publication date: December 10, 2009Applicant: NEC Electronics CorporationInventor: Kentaro Tada
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Patent number: 7585933Abstract: An object of the invention is to provide a novel dendritic polymer serving as an organic semiconductor material which is isotropic and which exhibits remarkably high carrier conductivity. Another object of the invention is to provide an electronic device employing the dendritic polymer. These objects are attained by a dendritic polymer having a branching structure including repeating units each having a branch portion, each of said repeating units having a structure represented by formula (1), and containing a linear portion X formed of an optionally substituted divalent organic group and a branch portion Y formed of an optionally substituted trivalent organic group: characterized in that the linear portion X contains at least one thienylene moiety and is at least partially conjugated with the branch portion Y, and in that the polymer reversibly assumes an insulative state and a metallic state, depending on the presence of an external factor.Type: GrantFiled: July 14, 2003Date of Patent: September 8, 2009Assignees: Sharp Kabushiki Kaisha, Toyo Gosei Co., Ltd.Inventors: Yamahara Motohiro, Satoru Obara, Kentaro Tada
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Patent number: 7531619Abstract: A method for producing a dendrimer having a structural repeating unit which is represented by formula (1) and which contains a linear portion including a thienylene moiety and a branch portion Y formed of an optionally substituted trivalent organic group.Type: GrantFiled: July 14, 2003Date of Patent: May 12, 2009Inventors: Satoru Obara, Kentaro Tada
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Patent number: 7329480Abstract: The radiation-sensitive negative-type resist composition for pattern formation containing an epoxy resin, a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein, characterized in that the resist composition, through drying, forms a resist film having a softening point falling within range of 30 to 120 C and that the epoxy resin is represented by formula (1): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nK falls within a range of 1 to 100; and each of “A”s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (2): (wherein X represents any of groups represented by formulas (3) to (5): and at least two groups represented by formula (3) are contained in one molecule of the epoxy resin))Type: GrantFiled: August 29, 2003Date of Patent: February 12, 2008Assignee: Toyo Gosei Co., Ltd.Inventors: Nobuji Sakai, Kentaro Tada
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Publication number: 20060189160Abstract: The method for producing a pattern formation mold includes: a first step of applying to a substrate a radiation-sensitive negative-type resist composition containing an epoxy resin represented by formula (I): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nk falls within a range of 1 to 100; and each of “A” s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (II): (wherein X represents any of groups represented by formulas (III) to (V): and at least two groups represented by formula (III) are contained in one molecule of the epoxy resin)), along with a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein; a second step of drying the substrate coated with the radiation-sensitive negative-type resist compositionType: ApplicationFiled: August 29, 2003Publication date: August 24, 2006Inventors: Tadashi Hattori, Yuichi Utsumi, Nobuji Sakai, Kentaro Tada
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Publication number: 20060172222Abstract: The radiation-sensitive negative-type resist composition for pattern formation containing an epoxy resin, a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein, characterized in that the resist composition, through drying, forms a resist film having a softening point falling within range of 30 to 120 C. and that the epoxy resin is represented by formula (1): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nK falls within a range of 1 to 100; and each of “A”s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (2): (wherein X represents any of groups represented by formulas (3) to (5): and at least two groups represented by formula (3) are contained in one molecule of the epoxy resin)).Type: ApplicationFiled: August 29, 2003Publication date: August 3, 2006Inventors: Nobuji Sakai, Kentaro Tada
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Publication number: 20060140059Abstract: To provide an electricity feeding mechanism to be able to feed electricity to a circuit board by a minimum size and an electronic timepiece having the same. An electricity feeding mechanism of an electronic timepiece includes an electricity feeding member having an oscillator cabinet contact terminal portion electrically brought into contact with a metal cabinet at other end thereof at a vicinity of one end portion of the metal cabinet of a quartz oscillator having a battery pole contact terminal portion electrically brought into contact with an electric pole of a battery at one end thereof, and an electricity feeding terminal portion electrically brought into contact with the metal cabinet of the quartz oscillator at a vicinity of other end portion of the metal cabinet of the quartz oscillator and electrically connected to an electricity feeding line of a circuit board mounted with the quartz oscillator.Type: ApplicationFiled: December 21, 2005Publication date: June 29, 2006Inventor: Kentaro Tada
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Publication number: 20060122364Abstract: A method for producing a dendrimer having a structural repeating unit which is represented by formula (1) and which contains a linear portion including a thienylene moiety and a branch portion Y formed of an optionally substituted trivalent organic group.Type: ApplicationFiled: July 14, 2003Publication date: June 8, 2006Inventors: Satoru Obara, Kentaro Tada
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Publication number: 20060102890Abstract: An object of the invention is to provide a novel dendrimer serving as an organic semiconductor material which is isotropic and which exhibits remarkably high carrier conductivity. Another object of the invention is to provide an electronic device employing the dendrimer. These objects are attained by a dendrimer having a branching structure in which repeating units each having a branch portion are repeatedly linked through the divergent method or the convergent method, each of said repeating units having a structure represented by formula (1), and containing a linear portion X formed of an optionally substituted divalent organic group and a branch portion Y formed of an optionally substituted trivalent organic group: characterized in that the linear portion X contains at least one thienylene moiety and is at least partially conjugated with the branch portion Y.Type: ApplicationFiled: July 14, 2003Publication date: May 18, 2006Inventors: Motohiro Yamahara, Satoru Obara, Kentaro Tada