Patents by Inventor Kentaro Tsutsumi
Kentaro Tsutsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7417100Abstract: The present invention relates to a fluorine-containing copolymer. This fluorine-containing copolymer includes (a) a first unit derived from ?-trifluoromethyl acrylic ester represented by the following general formula (1); and (b) a second unit derived from a vinyl monomer, where R1 is an organic group containing at least one fluorine atom.Type: GrantFiled: October 19, 2005Date of Patent: August 26, 2008Assignee: Central Glass Company, LimitedInventors: Haruhiko Komoriya, Sunao Koga, Kentaro Tsutsumi, Kazuhiko Maeda
-
Patent number: 7220873Abstract: This invention provides monoglycerides containing a conjugated fatty acid, and a process for producing the above described conjugated fatty acid containing monoglycerides in which all kinds of lipases can be used as catalysts. This invention relate to monoglycerides containing a conjugated fatty acid (preferably in an amount of 50% or more of fatty acids). This invention also relates to a process for producing the conjugated fatty acid containing monoglycerides, in which the conjugated fatty acid containing a free fatty acid and glycerol are subjected to the reaction of esterification, or of esterification and glycerolysis in the presence of lipase as a catalyst.Type: GrantFiled: August 2, 2002Date of Patent: May 22, 2007Assignees: The Nisshin Oillio Group, Ltd., Osaka Municipal GovernmentInventors: Yoshie Yamauchi, Takaya Yamamoto, Kentaro Tsutsumi, Yuji Shimada, Yomi Watanabe, Akio Sugihara, Yoshio Tominaga
-
Patent number: 7060771Abstract: The present invention relates to a fluorine-containing copolymer. This fluorine-containing copolymer includes (a) a first unit derived from ?-trifluoromethyl acrylic ester represented by the following general formula (1); and (b) a second unit derived from a vinyl monomer, where R1 is an organic group containing at least one fluorine atom.Type: GrantFiled: June 25, 2002Date of Patent: June 13, 2006Assignee: Central Glass Company, LimitedInventors: Haruhiko Komoriya, Sunao Koga, Kentaro Tsutsumi, Kazuhiko Maeda
-
Publication number: 20060063902Abstract: The present invention relates to a fluorine-containing copolymer. This fluorine-containing copolymer includes (a) a first unit derived from ?-trifluoromethyl acrylic ester represented by the following general formula (1); and (b) a second unit derived from a vinyl monomer, where R1 is an organic group containing at least one fluorine atom.Type: ApplicationFiled: October 19, 2005Publication date: March 23, 2006Applicant: CENTRAL GLASS CO., LTD.Inventors: Haruhiko Komoriya, Sunao Koga, Kentaro Tsutsumi, Kazuhiko Maeda
-
Patent number: 7005228Abstract: A ternary copolymer comprising units of ?-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of ?-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.Type: GrantFiled: June 25, 2002Date of Patent: February 28, 2006Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Patent number: 6933095Abstract: A copolymer of an acrylate monomer containing fluorine at ?-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.Type: GrantFiled: June 25, 2002Date of Patent: August 23, 2005Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Patent number: 6864037Abstract: A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.Type: GrantFiled: June 25, 2002Date of Patent: March 8, 2005Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co. Ltd., Central Glass Co., Ltd.Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Patent number: 6861197Abstract: A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.Type: GrantFiled: February 28, 2002Date of Patent: March 1, 2005Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.Inventors: Yuji Harada, Jun Watanabe, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Patent number: 6790586Abstract: A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.Type: GrantFiled: September 7, 2001Date of Patent: September 14, 2004Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.Inventors: Jun Hatakeyama, Yuji Harada, Jun Watanabe, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Patent number: 6723485Abstract: A positive resist composition contains (a) an acrylic resin which is subject to a change in solubility in a basic aqueous solution, the acrylic resin comprising an acrylic or methacrylic acid ester unit comprising an ester moiety comprising a fluorine-containing group; and (b) a photoacid generator capable of releasing an acid when irradiated with a laser. The composition is high in transparency to vacuum ultraviolet laser beams, particularly the F2 excimer laser beam, and high in sensitivity.Type: GrantFiled: November 28, 2000Date of Patent: April 20, 2004Assignee: Central Glass Company, LimitedInventors: Kentaro Tsutsumi, Michitaka Ootani, Kazuhiko Maeda
-
Patent number: 6710148Abstract: A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.Type: GrantFiled: February 8, 2002Date of Patent: March 23, 2004Assignees: Shin Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.Inventors: Yuji Harada, Jun Hatakeyama, Jun Watanabe, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Patent number: 6680389Abstract: Acrylic esters containing fluorine at &agr;-position and having a lactone ring introduced into the ester side chain thereof are novel. Polymers obtained from the acrylic esters have a high transparency to VUV and good adhesion to substrates and are used to formulate chemically amplified resist compositions for lithographic microfabrication.Type: GrantFiled: June 25, 2002Date of Patent: January 20, 2004Assignees: Sihn-Etsu Chemical Co., Ltd., Central Glass Co., Ltd.Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Publication number: 20030236369Abstract: The present invention relates to a fluorine-containing copolymer.Type: ApplicationFiled: June 25, 2002Publication date: December 25, 2003Applicant: Central Glass Company, LimitedInventors: Haruhiko Komoriya, Sunao Koga, Kentaro Tsutsumi, Kazuhiko Maeda
-
Publication number: 20030130533Abstract: This invention provides monoglycerides containing a conjugated fatty acid, and a process for producing the above described conjugated fatty acid containing monoglycerides in which all kinds of lipases can be used as catalysts.Type: ApplicationFiled: August 2, 2002Publication date: July 10, 2003Applicant: Rinoru Oil Mills Co., Ltd.Inventors: Yoshie Yamauchi, Takaya Yamamoto, Kentaro Tsutsumi, Yuji Shimada, Yomi Watanabe, Akio Sugihara, Yoshio Tominaga
-
Patent number: 6582880Abstract: An acrylate resin containing fluorinated alkyl groups in ester side chains has high transmittance to VUV radiation. A resist composition using the resin as a base polymer is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for lithographic microprocessing.Type: GrantFiled: September 7, 2001Date of Patent: June 24, 2003Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co. Ltd., Central Glass Co., Ltd.Inventors: Yuji Harada, Jun Watanabe, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Publication number: 20030082479Abstract: A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.Type: ApplicationFiled: June 25, 2002Publication date: May 1, 2003Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Publication number: 20030031953Abstract: A ternary copolymer comprising units of &agr;-trifluoro-methylacrylic carboxylate having acid labile groups substituted thereon, units of &agr;-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.Type: ApplicationFiled: June 25, 2002Publication date: February 13, 2003Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Publication number: 20030031952Abstract: A copolymer of an acrylate monomer containing fluorine at &agr;-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.Type: ApplicationFiled: June 25, 2002Publication date: February 13, 2003Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Patent number: 6511787Abstract: An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.Type: GrantFiled: September 7, 2001Date of Patent: January 28, 2003Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.Inventors: Yuji Harada, Jun Hatakeyama, Jun Watanabe, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
-
Publication number: 20030008231Abstract: A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.Type: ApplicationFiled: February 28, 2002Publication date: January 9, 2003Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Yuji Harada, Jun Watanabe, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda