Abstract: An information processing apparatus includes a first adding unit and a second adding unit. The first adding unit adds, as a plug-in, a new function to the information processing apparatus. The second adding unit adds, as an MIB of SNMP, information concerning the new function added by the first adding unit in a management area defined by a manufacturer of the information processing apparatus. The management area is an area in which MIBs other than standard MIBs are managed.

Abstract: An electricity storage module includes a storage cell group, first and second end plates, a first restraining band, a second restraining band, and at least one intermediate plate. The first restraining band is provided to face a first side surface of the storage cell group and is connected to the first and second end plates to restrain the storage cell group. The first restraining band includes a first flat surface, a first bent portion, and a second bent portion. The second restraining band includes a second flat surface, a third bent portion, and a fourth bent portion. The at least one intermediate plate is disposed at an internal position in the storage cell group in a stacking direction. The first and third bent portions or portions in vicinities of the first and third bent portions are connected to the at least one intermediate plate.

Abstract: The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group.

Abstract: To enhance the write speed of a nonvolatile memory. A charge injection/emission part of a nonvolatile memory cell includes an active region having an upper face, a side wall, and a shoulder part connecting the upper face and the side wall, a conductor film covering the upper face and the shoulder part of the active region, and a capacitance insulating film provided between the conductor film and the active region. Furthermore, the active region has a protrusion part constituted of a first concave part with respect to the upper face and a second concave part with respect to the side wall, in the shoulder part.

Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.

Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.

Abstract: A lane outward deviation avoidance assist apparatus includes: a recognition device configured to recognize a travel lane of a vehicle; a deviation recognition part configured to recognize a deviation from the travel lane recognized by the recognition device or a deviation prediction from the travel lane; a control part configured to perform a deviation avoidance control for avoiding the deviation from the travel lane at least by a steering; and a deviation number count part configured to count the number of deviations from the travel lane recognized by the deviation recognition part within a predetermined duration or the number of deviation predictions from the travel lane, wherein the control part performs at least any one of the deviation avoidance control and an alarm output control when the number counted by the deviation number count part reaches n, n being a natural number more than 1.

Abstract: To enhance the write speed of a nonvolatile memory. A charge injection/emission part of a nonvolatile memory cell includes an active region having an upper face, a side wall, and a shoulder part connecting the upper face and the side wall, a conductor film covering the upper face and the shoulder part of the active region, and a capacitance insulating film provided between the conductor film and the active region. Furthermore, the active region has a protrusion part constituted of a first concave part with respect to the upper face and a second concave part with respect to the side wall, in the shoulder part.

Abstract: A lane mark recognition device detects an edge located in a proximal area in front of the vehicle, and determines a lane mark candidate on the basis of the detected edge and an edge that is located in a distal area farther than the proximal area in front of the vehicle and that is continuous with the edge. Therefore, an edge of another vehicle (leading vehicle) or the like located in the distal area in a captured image is not detected as a lane mark candidate (is excluded as a non lane mark candidate).

Abstract: An imaging apparatus for a thermal analyzer is configured to image a heated sample inside a thermal analyzer main body section from an observation window provided in the thermal analyzer main body section. The imaging apparatus is provided with: an imaging device that is provided with a lens housing and a main body section; a holding section configured to hold the imaging device to have an orientation in which the lens housing is oriented toward the observation window, and the main body section is positioned on the opposite side of the observation window across the lens housing; and a cooling fan configured to provide airflow inside the holding section. The holding section is provided with a cooling air passage having an intake portion and an exhaust portion. At least a portion of the lens housing is arranged in the cooling air passage to be cooled by the airflow provided by the cooling fan.

Abstract: An image forming apparatus includes multiple network interfaces to be connected to different networks, a management-information storage, a management-information generating unit, and a transmitting unit. The management-information storage stores management information. In accordance with a management information transmission request received via one of the network interfaces, the management-information generating unit extracts information which is to be transmitted through the network interface through which the request has been received, from the management information, and generates transmission management information to be transmitted. The transmitting unit transmits the transmission management information generated by the management-information generating unit, from the network interface through which the request has been received.

Abstract: In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an Al2O3 film underlying the Cr film.

Abstract: There is provided a transporting section configured to transport a recording medium, a recording head configured to record an image on the recording medium, a carriage movable and holding the recording head, a first guide member guiding movement of the carriage, a second guide member guiding the movement of the carriage, a first movable member movable along with the carriage, a second movable member disposed away from the first movable member and movable along with the carriage, and a driving section configured to drive the carriage between a position where the recording head records the image onto the recording medium and a position where the recording head is separate from a path over which the transporting section transports the recording medium by moving the first movable member and the second movable member. The driving section moves the first movable member and the second movable member in synchronization.

Abstract: A thermal analyzer is provided with: a furnace tube; a pair of sample holders; a heating furnace; a measurement chamber; and a measurement unit arranged inside the measurement chamber. The sample holders are arranged inside the furnace tube and are provided with mounting faces on which a pair of sample containers are mounted respectively. The heating furnace has an opening through which a measurement sample is observable, the opening being located at a position above the center of a virtual segment which connects centers of gravity of the mounting faces of the sample holders. The opening is formed to have a size, as viewed in a direction perpendicular to the axial direction and the mounting faces, of 7 mm or more in the direction along the virtual segment and of 3 mm or more in the direction perpendicular to the virtual segment.

Abstract: A thermal analyzer (100) includes: a furnace tube (9) made of a transparent material; a heating furnace (3); a sample holding part (41, 42) arranged inside the furnace tube; a first support base (12); a second support base (14); a measurement chamber (30) connected to the furnace tube; a first movement part (22) for moving the first support base and the second support base between a measurement position, at which the furnace tube is connected to the measurement chamber, and a sample setting position, at which the sample holding part is exposed on a rear end side with respect to the furnace tube and the heating furnace; and a second movement part (24) for moving only the second support base to a sample observation position, at which the heating furnace is advanced and the furnace tube is exposed. Accordingly, the sample is observable from outside the exposed furnace tube.

Abstract: A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using N2 gas; and a second step of etching the laminated films after the first step using mixed gas of N2 gas and gas containing carbon elements.

Abstract: What is provides is a brain activity deducing apparatus, a brain activity deducing method, a brain activity measuring apparatus, a brain activity measuring method, and a brain-machine interface device, capable of deducing a brain activity signal of a source subject. The information presentation device presents perceptible information to the first subject. The brain activity measurement device acquires a brain activity signal representing a brain activity of the first subject. The individual conversion device deduces a brain activity signal of the second subject from the acquired brain activity signal based on the individual conversion information, which correlates the brain activity signal of the first subject and the brain activity signal of the second subject.

Abstract: There is provided a transporting section configured to transport a recording medium, a recording head configured to record an image on the recording medium, a carriage movable and holding the recording head, a first guide member guiding movement of the carriage, a second guide member guiding the movement of the carriage, a first movable member movable along with the carriage, a second movable member disposed away from the first movable member and movable along with the carriage, and a driving section configured to drive the carriage between a position where the recording head records the image onto the recording medium and a position where the recording head is separate from a path over which the transporting section transports the recording medium by moving the first movable member and the second movable member. The driving section moves the first movable member and the second movable member in synchronization.

Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.

Abstract: A brain information output apparatus includes an intention determination information storage unit in which two or more pieces of intention determination information can be stored, with each intention determination information including a pair of an intention identifier, and a learning feature amount group including one or more feature amounts extracted from second learning data that is obtained by converting first learning data into intracerebral brain activity data, the first leaning data being acquired from the outside of the cranium of a user when the user performs a trial according to one intention; a first brain activity data acquiring unit that acquires first brain activity data from the outside of the cranium of a user; a second brain activity data acquiring unit that converts the first brain activity data to intracerebral brain activity data, and acquires second brain activity data; a feature amount group acquiring unit that acquires, from the second brain activity data, an input feature amount group