Abstract: An operation device includes an operation unit, a power generation element that generates power according to an operation of the operation unit, a battery that supplies power, and a communication unit that transmits an operation signal corresponding to the operation unit that has been operated. The communication unit transmits the operation signal by use of power supplied from the battery, in a case where a residual quantity of the battery is a predetermined residual quantity or larger. The communication unit transmits the operation signal by use of power generated by the power generation element, in a case where the residual quantity of the battery is smaller than the predetermined residual quantity.

Abstract: Provided is a control apparatus connected to an operating apparatus and to an information processing apparatus. The operating apparatus receives an operation performed by a user. The information processing apparatus performs information processing based on an operation performed by the user at the operating apparatus. The control apparatus receives operation-related information indicating an operation performed by the user at the operating apparatus, acquires setting information regarding an operation content receivable by the operating apparatus, processes the received operation-related information according to the acquired setting information, and outputs the processed operation-related information to the information processing apparatus.

Abstract: Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.

Abstract: A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

Abstract: An information processing device that presents at least one of data stored in memory or indexes corresponding to the data; receives a selection of the presented at least one of the data or the indexes corresponding to the data; obtains information related to the selected at least one of the data or the indexes corresponding to the data; generates at least one search key abstracted from the obtained information; searches for data within the memory based on the at least one search key; and presents at least one of the data or indexes corresponding to the data as a search result.

Abstract: Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.

Abstract: An imaging device includes a light-sensing pixel region; a first pixel region; a second pixel region; a first wiring layer disposed above the light-sensing pixel region; and a second wiring layer disposed above the topmost wiring layer of the wiring layer disposed above the light-sensing pixel region, above the second pixel region. The first pixel region is disposed between the light-sensing pixel region and the second pixel region, adjacent to the light-sensing pixel region and the second pixel region, wherein the first pixel region overlaps, in plan view, a first shielding portion included in the first wiring layer. The second pixel region overlaps, in plan view, a second shielding portion included in the second wiring layer. An electroconductive pattern is formed at the first wiring layer at a position overlapping the second pixel region in plan view.

Abstract: An information processing device that presents at least one of data stored in memory or indexes corresponding to the data; receives a selection of the presented at least one of the data or the indexes corresponding to the data; obtains information related to the selected at least one of the data or the indexes corresponding to the data; generates at least one search key abstracted from the obtained information; searches for data within the memory based on the at least one search key; and presents at least one of the data or indexes corresponding to the data as a search result.

Abstract: Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.

Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.

Abstract: An imaging device includes a light-sensing pixel region; a first pixel region; a second pixel region; a first wiring layer disposed above the light-sensing pixel region; and a second wiring layer disposed above the topmost wiring layer of the wiring layer disposed above the light-sensing pixel region, above the second pixel region. The first pixel region is disposed between the light-sensing pixel region and the second pixel region, adjacent to the light-sensing pixel region and the second pixel region, wherein the first pixel region overlaps, in plan view, a first shielding portion included in the first wiring layer. The second pixel region overlaps, in plan view, a second shielding portion included in the second wiring layer. An electroconductive pattern is formed at the first wiring layer at a position overlapping the second pixel region in plan view.

Abstract: A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

Abstract: A solid-state image sensor comprising a photoelectric conversion portion, a MOS transistor, a first insulating layer, a second insulating layer whose refractive index is higher than that of the first insulating layer, and a light-guiding portion including a first portion and a second portion formed on the first portion, wherein an angle that the side face of the first portion makes with a plane parallel to a light-receiving face of the photoelectric conversion portion is smaller than an angle that a side face of the second portion makes with the parallel plane, and a boundary between the first portion and the second portion is positioned higher than an upper face of a gate electrode of the MOS transistor, and lower than a boundary between the first insulating layer and the second insulating layer.

Abstract: A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.

Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.

Abstract: An information processing device that presents at least one of data stored in memory or indexes corresponding to the data; receives a selection of the presented at least one of the data or the indexes corresponding to the data; obtains information related to the selected at least one of the data or the indexes corresponding to the data; generates at least one search key abstracted from the obtained information; searches for data within the memory based on the at least one search key; and presents at least one of the data or indexes corresponding to the data as a search result.

Abstract: A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.

Abstract: A solid-state image sensor comprising a photoelectric conversion portion, a MOS transistor, a first insulating layer, a second insulating layer whose refractive index is higher than that of the first insulating layer, and a light-guiding portion including a first portion and a second portion formed on the first portion, wherein an angle that the side face of the first portion makes with a plane parallel to a light-receiving face of the photoelectric conversion portion is smaller than an angle that a side face of the second portion makes with the parallel plane, and a boundary between the first portion and the second portion is positioned higher than an upper face of a gate electrode of the MOS transistor, and lower than a boundary between the first insulating layer and the second insulating layer.

Abstract: Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.