Abstract: An electronic component includes a component body, a metal terminal, and a bonding material. The component body includes an element body and an external electrode. The metal terminal includes a first main surface and a second main surface, and a side surface. The bonding material electrically and physically connects the external electrode and the metal terminal. The metal terminal includes a first metal layer including the first main surface, a second metal layer including the second main surface, and a terminal body including the side surface. The terminal body is exposed at the side surface, and the first metal layer and the second metal layer are separated from each other on the side surface. Each of the first metal layer and the second metal layer includes a Ni plated layer. The terminal body includes Cu. The bonding material includes solder.

Abstract: A ceramic electronic device comprises an element body including a ceramic layer and an internal electrode layer, and an external electrode electrically connected to at least one end of the internal electrode layer. The element body includes an interface part at least at a part of a boundary between the external electrode and the ceramic layer. The interface part includes an oxide containing aluminium and an oxide containing boron.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first, second, and third semiconductor regions, an insulating part, a conductive part, and a gate electrode. The first semiconductor region is provided on the first electrode and is electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating part is provided on the first electrode. The conductive part is provided in the insulating part and is arranged with the first semiconductor region. The gate electrode is provided in the insulating part. The gate electrode is positioned above the conductive part and is arranged with the second semiconductor region. The second electrode is provided on the third semiconductor region and the insulating part, and is electrically connected to the third semiconductor region.

Abstract: A semiconductor device includes a semiconductor part, an first electrode, a control electrode and second electrodes. The control electrode and the second electrodes are provided between the semiconductor part and the first electrode, and provided inside trenches, respectively. The second electrodes include first to third ones. The first and second ones of the second electrodes are adjacent to each other with a portion of the semiconductor part interposed. The second electrodes each are electrically isolated from the semiconductor part by a insulating film including first and second insulating portions adjacent to each other. The first insulating portion has a first thickness. The second insulating portion has a second thickness thinner than the first thickness. The first insulating portion is provided between the first and second ones of the second electrodes. The second insulating portion is provided between the first and third ones of the second electrodes.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; a control electrode provided inside a trench of the semiconductor part; a third electrode provided inside the trench; a diode element provided at the front surface of the semiconductor part; a resistance element provided on the front surface of the semiconductor part via an insulating film, the diode element being electrically connected to the second electrode; a first interconnect electrically connecting the diode element and the resistance element, the first interconnect being electrically connected to the third electrode; and a second interconnect electrically connecting the resistance element and the semiconductor part. The resistance element is connected in series to the diode element. The diode element is provided to have a rectifying property reverse to a current direction flowing from the resistance element to the second electrode.

Abstract: According to an embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a first metal portion, a third semiconductor region of a second conductivity type, a first electrode, a fourth semiconductor region of the second conductivity type, and a second electrode. The first semiconductor region includes a first portion and a second portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on part of the second semiconductor region. The first metal portion is provided in the first semiconductor region. The third semiconductor region is positioned on the first portion. The fourth semiconductor region is provided on another part of the second semiconductor region. The fourth semiconductor region is separated from the third semiconductor region. The fourth semiconductor region is positioned on the second portion.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first, second, and third semiconductor regions, an insulating part, a conductive part, and a gate electrode. The first semiconductor region is provided on the first electrode and is electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating part is provided on the first electrode. The conductive part is provided in the insulating part and is arranged with the first semiconductor region. The gate electrode is provided in the insulating part. The gate electrode is positioned above the conductive part and is arranged with the second semiconductor region. The second electrode is provided on the third semiconductor region and the insulating part, and is electrically connected to the third semiconductor region.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first, second, and third semiconductor regions, an insulating part, a conductive part, and a gate electrode. The first semiconductor region is provided on the first electrode and is electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating part is provided on the first electrode. The conductive part is provided in the insulating part and is arranged with the first semiconductor region. The gate electrode is provided in the insulating part. The gate electrode is positioned above the conductive part and is arranged with the second semiconductor region. The second electrode is provided on the third semiconductor region and the insulating part, and is electrically connected to the third semiconductor region.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; a control electrode provided inside a trench of the semiconductor part; a third electrode provided inside the trench; a diode element provided at the front surface of the semiconductor part; a resistance element provided on the front surface of the semiconductor part via an insulating film, the diode element being electrically connected to the second electrode; a first interconnect electrically connecting the diode element and the resistance element, the first interconnect being electrically connected to the third electrode; and a second interconnect electrically connecting the resistance element and the semiconductor part. The resistance element is connected in series to the diode element. The diode element is provided to have a rectifying property reverse to a current direction flowing from the resistance element to the second electrode.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first, second, and third semiconductor regions, an insulating part, a conductive part, and a gate electrode, The first semiconductor region is provided on the first electrode and is electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating part is provided on the first electrode. The conductive part is provided in the insulating part and is arranged with the first semiconductor region. The gate electrode is provided in the insulating part. The gate electrode is positioned above the conductive part and is arranged with the second semiconductor region. The second electrode is provided on the third semiconductor region and the insulating part, and is electrically connected to the third semiconductor region.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; a control electrode provided inside a trench of the semiconductor part; a third electrode provided inside the trench; a diode element provided at the front surface of the semiconductor part; a resistance element provided on the front surface of the semiconductor part via an insulating film, the diode element being electrically connected to the second electrode; a first interconnect electrically connecting the diode element and the resistance element, the first interconnect being electrically connected to the third electrode; and a second interconnect electrically connecting the resistance element and the semiconductor part. The resistance element is connected in series to the diode element. The diode element is provided to have a rectifying property reverse to a current direction flowing from the resistance element to the second electrode.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a metal-including portion being conductive, an insulating portion, a gate electrode, a second electrode, a first interconnect layer, and a second interconnect layer. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region and the metal-including portion are provided on portions of the second semiconductor region. The insulating portion is arranged in a second direction with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The gate electrode and the second electrode are provided inside the insulating portion. The first interconnect layer is electrically connected to the gate electrode.

Abstract: A semiconductor device includes a semiconductor part, an first electrode, a control electrode and second electrodes. The control electrode and the second electrodes are provided between the semiconductor part and the first electrode, and provided inside trenches, respectively. The second electrodes include first to third ones. The first and second ones of the second electrodes are adjacent to each other with a portion of the semiconductor part interposed. The second electrodes each are electrically isolated from the semiconductor part by a insulating film including first and second insulating portions adjacent to each other. The first insulating portion has a first thickness. The second insulating portion has a second thickness thinner than the first thickness. The first insulating portion is provided between the first and second ones of the second electrodes. The second insulating portion is provided between the first and third ones of the second electrodes.

Abstract: A semiconductor device includes a semiconductor part, a first electrode, a plurality of control electrodes and a second electrode. The semiconductor part has a plurality of first trenches and a second trench. The plurality of first trenches are spaced from each other and arranged around the second trench. The first electrode is provided above the semiconductor part. The first electrode is provided over the plurality of first trenches and the second trench. The control electrodes are provided in the first trenches, respectively. The control electrodes each are electrically isolated from the semiconductor part by a first insulating film. The second electrode is provided in the second trench. The second electrode is electrically isolated from the semiconductor part by a second insulating film and electrically connected to the first electrode.

Abstract: A semiconductor device includes a semiconductor part, an first electrode, a control electrode and second electrodes. The control electrode and the second electrodes are provided between the semiconductor part and the first electrode, and provided inside trenches, respectively. The second electrodes include first to third ones. The first and second ones of the second electrodes are adjacent to each other with a portion of the semiconductor part interposed. The second electrodes each are electrically isolated from the semiconductor part by a insulating film including first and second insulating portions adjacent to each other. The first insulating portion has a first thickness. The second insulating portion has a second thickness thinner than the first thickness. The first insulating portion is provided between the first and second ones of the second electrodes. The second insulating portion is provided between the first and third ones of the second electrodes.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; a control electrode provided inside a trench of the semiconductor part; a third electrode provided inside the trench; a diode element provided at the front surface of the semiconductor part; a resistance element provided on the front surface of the semiconductor part via an insulating film, the diode element being electrically connected to the second electrode; a first interconnect electrically connecting the diode element and the resistance element, the first interconnect being electrically connected to the third electrode; and a second interconnect electrically connecting the resistance element and the semiconductor part. The resistance element is connected in series to the diode element. The diode element is provided to have a rectifying property reverse to a current direction flowing from the resistance element to the second electrode.

Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided on the first semiconductor region, a third semiconductor region of the first conductivity type provided on the second semiconductor region, a first insulating part provided in the first semiconductor region, a first electrode provided in the first semiconductor region, the first insulating part disposed between the first electrode and the first semiconductor region, a second insulating part provided on the first electrode, a gate electrode provided on the second insulating part, a gate insulating part provided between the gate electrode and the second semiconductor region, and a second electrode provided on the second semiconductor region and on the third semiconductor region, and is electrically connected to the second semiconductor region, the third semiconductor region, and the first electrode.

Abstract: A semiconductor device includes a semiconductor part, a first electrode, a plurality of control electrodes and a second electrode. The semiconductor part has a plurality of first trenches and a second trench. The plurality of first trenches are spaced from each other and arranged around the second trench. The first electrode is provided above the semiconductor part. The first electrode is provided over the plurality of first trenches and the second trench. The control electrodes are provided in the first trenches, respectively. The control electrodes each are electrically isolated from the semiconductor part by a first insulating film. The second electrode is provided in the second trench. The second electrode is electrically isolated from the semiconductor part by a second insulating film and electrically connected to the first electrode.

Abstract: A semiconductor device includes a semiconductor part, an first electrode, a control electrode and second electrodes. The control electrode and the second electrodes are provided between the semiconductor part and the first electrode, and provided inside trenches, respectively. The second electrodes include first to third ones. The first and second ones of the second electrodes are adjacent to each other with a portion of the semiconductor part interposed. The second electrodes each are electrically isolated from the semiconductor part by a insulating film including first and second insulating portions adjacent to each other. The first insulating portion has a first thickness. The second insulating portion has a second thickness thinner than the first thickness. The first insulating portion is provided between the first and second ones of the second electrodes. The second insulating portion is provided between the first and third ones of the second electrodes.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a metal-including portion being conductive, an insulating portion, a gate electrode, a second electrode, a first interconnect layer, and a second interconnect layer. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region and the metal-including portion are provided on portions of the second semiconductor region. The insulating portion is arranged in a second direction with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The gate electrode and the second electrode are provided inside the insulating portion. The first interconnect layer is electrically connected to the gate electrode.