Abstract: A packet relay system includes a first packet relay device and a second packet relay device. One of the first packet relay device and the second packet relay device relays a packet based on a first priority level of the first packet relay device and on a second priority level of the second packet relay device, the first priority level is higher than the second priority level, when the first packet relay device recovers from an error state, the first packet relay device transmits a first notification, the first notification notifies the second packet relay device of the first priority level, based on the first notification, the second packet relay device changes the second priority level to a third priority level that is higher than the first priority level, and the second packet relay device changes the third priority level to the second priority level after receiving path information.

Abstract: A packet relay system includes a first packet relay device and a second packet relay device. One of the first packet relay device and the second packet relay device relays a packet based on a first priority level of the first packet relay device and on a second priority level of the second packet relay device, the first priority level is higher than the second priority level, when the first packet relay device recovers from an error state, the first packet relay device transmits a first notification, the first notification notifies the second packet relay device of the first priority level, based on the first notification, the second packet relay device changes the second priority level to a third priority level that is higher than the first priority level, and the second packet relay device changes the third priority level to the second priority level after receiving path information.

Abstract: The present invention is a precious metal-based amorphous alloy having a Pt—Cu—P based structure including in atomic %: 50≦Pt≦75%, 5≦Cu≦35%, and 15≦P≦25% and is a precious metal-based amorphous alloy having a Pt—Pd—Cu—P based structure including in atomi %: 5≦Pt≦70%, 5≦Pd≦50%, 5≦Cu≦50%, and 5≦P≦30%. Preferably, cooling rates for manufacturing the alloys having these compositions are 10−1 to 102° C./sec. for the Pt—Cu—P based structure and 101 to 102° C./sec. for the Pt—Pd—Cu—P based structure.

Abstract: The present invention is a precious metal-based amorphous alloy having a Pt—Cu—P based structure including in atomic %: 50≦Pt≦75%, 5≦Cu≦35%, and 15≦P≦25% and is a precious metal-based amorphous alloy having a Pt—Pd—Cu—P based structure including in atomic %: 5≦Pt≦70%, 5≦Pd≦50%, 5≦Cu≦50%, and 5≦P≦30%. Preferably, cooling rates for manufacturing the alloys having these compositions are 10−1 to 102° C./sec. for the Pt—Cu—P based structure and 101 to 102° C./sec. for the Pt—Pd—Cu—P based structure.

Abstract: The present invention is directed to crystals of P1-(2′-deoxycytidine 5′-)P4-(uridine 5′-)tetraphosphate (dCP4U) or a salt thereof and to a process for producing the crystals. The present invention also provides a process for producing dCP4U involving reacting uridine 5′-monophosphate (UMP), 2′-deoxycytidine 5′-monophosphate (dCMP), diphenyl phosphorochloridate (DPC), and pyrophosphate (PPi). The crystals of dCP4U obtained through the process according to the present invention have high purity and high stability and no hygroscopicity as compared with a freeze-dried product, and thereby serve as a useful raw material for preparing a pharmaceutical. The process for producing dCP4U according to the present invention permits use of inexpensive UMP as a raw material and realizes high yield. Thus, the process is suitable for large-scale synthesis of dCP4U.

Abstract: The present invention is a precious metal-based amorphous alloy having a Pt—Cu—P based structure including in atomic %: 50≦Pt≦75%, 5≦Cu≦35%, and 15≦P≦25% and is a precious metal-based amorphous alloy having a Pt—Pd—Cu—P based structure including in atomic %: 5≦Pt≦70%, 5≦Pd≦50%, 5≦Cu≦50%, and 5≦P≦30%. Preferably, cooling rates for manufacturing the alloys having these compositions are 10−1 to 102° C./sec. for the Pt—Cu—P based structure and 101 to 102° C./sec. for the Pt—Pd—Cu—P based structure.