Patents by Inventor Kerry L. Spurgin

Kerry L. Spurgin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench isolation process using nitrogen preconditioning to reduce crystal defects
    Patent number: 6118168
    Abstract: A method of forming a trench isolation structure in a semiconductor substrate. After etching a trench into the semiconductor substrate, an oxide layer is formed within the trench. The surface of this oxide layer is subject to a nitrogen plasma. Subsequently, another oxide layer is deposited over the nitrogen-rich surface of the first oxide layer. Deposition of this second oxide layer is accomplished by a chemical vapor deposition (CVD) process primarily using a reactant gas other than ozone.
    Type: Grant
    Filed: December 23, 1997
    Date of Patent: September 12, 2000
    Assignee: Intel Corporation
    Inventors: Peter K. Moon, David T. Krick, Kerry L. Spurgin
  • Trench isolation process using nitrogen preconditioning to reduce crystal defects
    Patent number: 5985735
    Abstract: A method of forming a trench isolation structure in a semiconductor substrate. After etching a trench into the semiconductor substrate, an oxide layer is formed within the trench. The surface of this oxide layer is subjected to a nitrogen plasma. Subsequently, another oxide layer is deposited over the nitrogen-rich surface of the first oxide layer. Deposition of this second oxide layer is accomplished by a chemical vapor deposition (CVD) process primarily using a reactant gas other than ozone.
    Type: Grant
    Filed: September 29, 1995
    Date of Patent: November 16, 1999
    Assignee: Intel Corporation
    Inventors: Peter K. Moon, David T. Krick, Kerry L. Spurgin
  • Trench isolation with planar topography and method of fabrication
    Patent number: 5358891
    Abstract: A method of forming and refilling a trench in a substrate. First a trench is formed in the substrate. The trench is then refilled with a conformal material. Next, a recess is etched into the top portion of the refilled trench. The recess is then refilled with a second material until the refilled recess and substrate are substantially planar.
    Type: Grant
    Filed: June 29, 1993
    Date of Patent: October 25, 1994
    Assignee: Intel Corporation
    Inventors: Chi-Hwa Tsang, Kerry L. Spurgin, Deborah A. Parsons, William L. Hargrove, Ganesan Radhakrishnan