Abstract: An improved double-layered ceramic heater, which is used for heating a semiconductor silicon wafer mounted thereon in the processing of semiconductor devices, is proposed to be freed from the problems in the prior art ceramic heaters in respects of service life and contamination of silicon wafers mounted thereon. Different from conventional ceramic heaters having a ceramic substrate plate of, for example, boron nitride provided with a heater element layer of a metal foil, the inventive ceramic heater has a substrate plate of silicon nitride and a heater element layer of graphite is formed thereon by the CVD method so that the ceramic heater is not responsible for contamination of semiconductor silicon by virtue of absence of any element which can be a disturbing dopant of the semiconductor. The problem of contamination with carbon can be solved by further providing a coating layer of silicon nitride by the CVD method.

Abstract: An apparatus for forming a high purity silicon carbide film on the inner surface of a cylindrical member by a chemical vapor phase deposition process is provided. The member to be coated is received in a reaction vessel and heated by a heating means. The apparatus includes a gas feed conduit having a distal end disposed for axial motion within the member, for feeding a source gas containing a carbon source and a silicon source into the interior of the member, and a gas discharge conduit having a distal end disposed for axial motion within the member, for discharging used reaction gases from within the member. The gas feed and discharge conduits are moved so that their distal ends move through the member in unison to continuously move the reaction region.