Abstract: Provided is a thin film deposition reactor. The reactor includes a reactor block including a wafer block on which a wafer is mounted; a top lid for covering and sealing the reactor block; a showerhead disposed under the top lid and connected to an RF power supply unit, the showerhead having first nozzles and second nozzles that are not combined with each other; a showerhead isolation assembly having a plurality of gas curtain holes for forming a gas curtain around the wafer block, the showerhead isolation assembly for isolating the top lid from the showerhead; a top lid isolation flow line disposed on the top lid, the top lid isolation flow line having a first flow line and a second flow line that are connected to the first nozzles and the second nozzles, respectively, and are each bent at a right angle at least once.

Abstract: A reactor for thin film deposition and a thin film deposition method using the reactor are provided. The reactor includes: a reactor block which receives a wafer transferred through a wafer transfer slit; a wafer block which is installed in the reactor block to receive the wafer thereon; a top plate disposed to cover the reactor block; a shower head which is mounted on the bottom of the top plate and diffuses gas toward the wafer; and an exhaust unit which exhausts the gas from the reactor block. A first supply pipeline which supplies a first reactant gas and/or an inert gas to the wafer; a second supply pipeline which supplies a second reactant gas and/or an inert gas to the wafer; and a plasma generator which generates plasma between the wafer block and shower head are included.

Abstract: Provided is a method of depositing an ALD thin film. The method includes (S1) loading a wafer on a wafer block; (S2) depositing the ALD thin film on the wafer; (S3) unloading the wafer, on which the ALD thin film is deposited, from the wafer block; (S4-1) loading a dummy wafer on the wafer block; (S4-2) stabilizing the flow rates and the pressures of gases in the reactor by spraying only an inert gas or a mixture of the inert gas and a cleaning gas in the reactor; (S4-3) supplying RF power to the showerhead so as to activate the cleaning gas and mostly removing a thin film deposited on a surface of the showerhead by using the activated cleaning gas; (S4-4) unloading the dummy wafer from the wafer block; (S4-5) repeating steps 4-1 through 4-4 at least once using new dummy wafers; and (S5) purging the inside of the reactor.

Abstract: Provided is a reaction chamber for depositing a thin film. The reaction chamber includes a reactor block; a wafer block located inside the reactor block; a top plate that covers the reactor block to maintain a predetermined pressure; a feeding unit which supplies reactive gases to the reactor block; a shower head, which is installed in the top plate and includes a plurality of first spray holes for spraying the first reactive gas on a wafer and a plurality of second spray holes for spraying the second reactive gas; and an exhaust unit which expels gases from the reactor block. The feeding unit includes a feeding block; a distributing block; two or more first gas transfer pipes; and a second gas transfer pipe. The shower head includes an upper diffusion block, an intermediate diffusion block, and a lower diffusion block.