Abstract: A phase detection device includes a clock divider configured to divide a clock signal and generate a plurality of divided clock signals, a recoverer configured to generate a recovered clock signal having substantially the same frequency as the clock signal based on the plurality of divided clock signals, and a phase detector configured to detect a phase of the recovered clock signal in response to a data strobe signal.

Abstract: The receiver includes a first buffer configured to buffer a data to generate a first internal data, a first delay unit configured to retard the first internal clock signal by a first delay period to generate a first delayed internal clock signal, and a second buffer configured to buffer the first internal data to generate a first input data.

Abstract: Deserializers are provided. The deserializer includes a data aligner, a selection signal generator and a selection output unit. The data aligner is configured to align data in response to internal clock signals having different phases from each other to generate higher aligned data and lower aligned data. The selection signal generator is configured to detect a phase of one of the internal clock signals in response to a phase detection signal to generate a selection signal. The phase detection signal includes a pulse generated according to a write command signal and a write latency signal. The selection output unit is configured to output the higher aligned data or the lower aligned data as selected alignment data in response to the selection signal.

Abstract: Deserializers are provided. The deserializer includes a data aligner, a selection signal generator and a selection output unit. The data aligner is configured to align data in response to internal clock signals having different phases from each other to generate higher aligned data and lower aligned data. The selection signal generator is configured to detect a phase of one of the internal clock signals in response to a phase detection signal to generate a selection signal. The phase detection signal includes a pulse generated according to a write command signal and a write latency signal. The selection output unit is configured to output the higher aligned data or the lower aligned data as selected alignment data in response to the selection signal.

Abstract: An integrated circuit includes first and second bump pads spaced from each other with a first space, configured to receive differential signals for a normal operation, and at least one redundant bump pad spaced from the first bump pad with a second space smaller than the first space, configured to receive a signal for a repair to the differential signals.

Abstract: Data transferring systems are provided. The data transferring system includes a transmitter and a receiver. The transmitter transmit a reference code signal including a reference value of data, a transmission data signal generated by synthesizing data being transmitted and the reference code signal, and an external data masking signal. The receiver receives the transmission data signal to extract an internal code signal and generates an internal data masking signal in response to the internal code signal and the reference code signal. Further, the receiver generates an internal data signal from the transmission data signal in response to the external data masking signal and the internal data masking signal. Related methods are also provided.

Abstract: Deserializers are provided. The deserializer includes a data aligner, a selection signal generator and a selection output unit. The data aligner is configured to align data in response to internal clock signals having different phases from each other to generate higher aligned data and lower aligned data. The selection signal generator is configured to detect a phase of one of the internal clock signals in response to a phase detection signal to generate a selection signal. The phase detection signal includes a pulse generated according to a write command signal and a write latency signal. The selection output unit is configured to output the higher aligned data or the lower aligned data as selected alignment data in response to the selection signal.

Abstract: A memory system includes a memory including a condition detection circuit configured to detect a memory condition, and a condition output circuit configured to output the memory condition detected by the condition detection circuit. A memory controller is configured to adjust operational performance of the memory in response to the memory condition.

Abstract: An integrated circuit includes first and second bump pads spaced from each other with a first space, configured to receive differential signals for a normal operation, and at least one redundant bump pad spaced from the first bump pad with a second space smaller than the first space, configured to receive a signal for a repair to the differential signals.

Abstract: A semiconductor integrated circuit includes a first pad allocated to receive a row address, a second pad allocated to discriminate a first input/output mode and a second input/output mode, a detector configured to generate a detection signal in response to logic levels of the first and second pads, and a column address controller configured to deassert a column address to a logic low level in response to a deasserted detection signal. The semiconductor integrated circuit may selectively support one of first and second memory capacities and one of the first and second input/output modes using the logic levels of the first and second pads.

Abstract: Deserializers are provided. The deserializer includes a data aligner, a selection signal generator and a selection output unit. The data aligner is configured to align data in response to internal clock signals having different phases from each other to generate higher aligned data and lower aligned data. The selection signal generator is configured to detect a phase of one of the internal clock signals in response to a phase detection signal to generate a selection signal. The phase detection signal includes a pulse generated according to a write command signal and a write latency signal. The selection output unit is configured to output the higher aligned data or the lower aligned data as selected alignment data in response to the selection signal.

Abstract: A semiconductor integrated circuit including first semiconductor chip and second semiconductor chip that are vertically stacked, wherein the first semiconductor chip includes a first column data driving circuit configured to transmit internal data to the second semiconductor chip in a DDR (double data rate) scheme based on an internal strobe signal, and a first column strobe signal driving circuit configured to generate first column strobe signals that are source-synchronized with first column data transmitted to the second semiconductor chip by the first column data driving circuit, based on the internal strobe signal, and transmit the first column strobe signals to the second semiconductor chip.

Abstract: A semiconductor integrated circuit includes a column redundancy fuse block having a fuse set array having a plurality of fuse sets including a plurality of column address fuses, and a fuse blowing information block configured to output a fuse blowing determination signal of a corresponding column based on a cutting state of the column address fuses, wherein the column redundancy fuse is disposed in the edge area, wherein the fuse blowing determination signal is inputted to a column control block through upper portion of a memory cell array of a corresponding bank.

Abstract: A semiconductor integrated circuit includes a first pad allocated to receive a row address, a second pad allocated to discriminate a first input/output mode and a second input/output mode, a detector configured to generate a detection signal in response to logic levels of the first and second pads, and a column address controller configured to deassert a column address to a logic low level in response to a deasserted detection signal. The semiconductor integrated circuit may selectively support one of first and second memory capacities and one of the first and second input/output modes using the logic levels of the first and second pads.

Abstract: A semiconductor memory device includes a cell array including a plurality of unit cells, a first amplification circuit amplifying an input signal received from at least one unit cell among the unit cells, a signal transmission unit to transmit the signal to the first amplification circuit in response to a selection signal, first amplification control circuit to output a first amplification control signal controlling an amplification operation of the first amplification circuit, a second amplification circuit to amplify an output signal of the first amplification circuit, a second amplification control circuit to output a second amplification control signal controlling an amplification operation of the second amplification circuit, and a voltage adjustment circuit to adjust an internal voltage of the first amplification circuit in response to a voltage adjustment signal before the first and second amplification circuits perform the amplification operation.

Abstract: A semiconductor integrated circuit includes a semiconductor chip having an edge area and a bank area located an inner portion of the edge area, and a column redundancy fuse block disposed in the edge area.

Abstract: A semiconductor memory device includes a cell array including a plurality of unit cells, a first amplification circuit amplifying an input signal received from at least one unit cell among the unit cells, a signal transmission unit to transmit the signal to the first amplification circuit in response to a selection signal, first amplification control circuit to output a first amplification control signal controlling an amplification operation of the first amplification circuit, a second amplification circuit to amplify an output signal of the first amplification circuit, a second amplification control circuit to output a second amplification control signal controlling an amplification operation of the second amplification circuit, and a voltage adjustment circuit to adjust an internal voltage of the first amplification circuit in response to a voltage adjustment signal before the first and second amplification circuits perform the amplification operation.

Abstract: A semiconductor integrated circuit includes a column redundancy fuse block having a fuse set array having a plurality of fuse sets including a plurality of column address fuses, and a fuse blowing information block configured to output a fuse blowing determination signal of a corresponding column based on a cutting state of the column address fuses, wherein the column redundancy fuse is disposed in the edge area, wherein the fuse blowing determination signal is inputted to a column control block through upper portion of a memory cell array of a corresponding bank.

Abstract: A fuse circuit includes a fuse unit configured to form a current path on a first node according to whether or not a fuse is cut; a driving current controller configured to control a potential level of the first node in response to a test signal; and an output unit configured to output a fuse state signal in response to the potential level of the first node.

Abstract: A data line driving circuit includes: an operation period signal generation unit configured to generate an operation period signal for determining a write period and a read period in response to a read command or a write command; and a read data line driving unit configured to fix a read data line to a first voltage level in response to the operation period signal, the read data line being dedicated to a read operation.