Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers, such as undoped semiconductor layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be preferentially etched away, leaving the doped semiconductor layers as fins for a ribbon FET. In another embodiment, an interlayer can be deposited on top of a semiconductor layer, and a ferroelectric layer can be deposited on the interlayer. The interlayer can bridge a gap in lattice parameters between the semiconductor layer and the ferroelectric layer.

Abstract: Technologies for a transistor with a thin-film ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a thin layer of scandium aluminum nitride (ScxAl1-xN) ferroelectric gate dielectric. The channel of the transistor may be, e.g., gallium nitride or molybdenum disulfide. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one-transistor memory cell.

Abstract: In one embodiment, transistor device includes a first source or drain material on a substrate, a semiconductor material on the first source or drain material, a second source or drain material on the semiconductor material, a dielectric layer on the substrate and adjacent the first source or drain material, a ferroelectric (FE) material on the dielectric layer and adjacent the semiconductor material, and a gate material on or adjacent to the FE material. The FE material may be a perovskite material and may have a lattice parameter that is less than a lattice parameter of the semiconductor material.

Abstract: A controller may identify a plurality of sets of potential parameters associated with operation of an engine, wherein each set of potential parameters includes a potential setting of a turbine of a variable geometry turbocharger (VGT) of the engine and a potential setting of an intake throttle valve (ITV) of the engine. The controller may determine, based on the plurality of sets of potential parameters, a plurality of sets of predicted values, wherein each set of predicted values includes a predicted outlet pressure of a compressor of the VGT and a predicted temperature of an exhaust gas of the engine. The controller may determine respective scores of the plurality of sets of predicted values, and may select, based on the respective scores, a particular set of predicted values of the plurality of sets of predicted values. The controller may thereby control the turbine of the VGT and the ITV.

Abstract: A controller may identify a plurality of sets of potential parameters associated with operation of an engine, wherein each set of potential parameters includes a potential setting of a turbine of a variable geometry turbocharger (VGT) of the engine and a potential setting of an intake throttle valve (ITV) of the engine. The controller may determine, based on the plurality of sets of potential parameters, a plurality of sets of predicted values, wherein each set of predicted values includes a predicted outlet pressure of a compressor of the VGT and a predicted temperature of an exhaust gas of the engine. The controller may determine respective scores of the plurality of sets of predicted values, and may select, based on the respective scores, a particular set of predicted values of the plurality of sets of predicted values. The controller may thereby control the turbine of the VGT and the ITV.

Abstract: In one embodiment, a transistor device includes a gate material layer on a substrate, a ferroelectric (FE) material layer on the gate material, a semiconductor channel material layer on the FE material layer, a first source/drain material on the FE material layer and adjacent the semiconductor channel material layer, and a second source/drain material on the FE material layer and adjacent the semiconductor channel material layer and on an opposite side of the semiconductor channel material layer from the first source/drain material. A first portion of the FE material layer is directly between the gate material and the first source/drain material, and a second portion of the FE material layer is directly between the gate material and the second source/drain material.

Abstract: A pressure damping device for a fluid circuit includes a lower body having a fluid inlet port and a fluid outlet port. An upper cover attaches to the body. An elastically deformable membrane is interposed between the body and the cover, and a circular cup is arranged on the membrane. A spring is interposed between the cup and a bottom of the cover. The body includes a support member for supporting the membrane, with the support member projecting from the first bottom and including a free upper end on which the membrane is adapted to be supported.

Abstract: A nozzle cap includes a cap body defining a cap axis, the cap body defining a circumferential wall extending circumferentially around the cap axis; and a vibration sensor including a shaft, the shaft defining a first end and a second end, the first end attached to the circumferential wall, the cap axis positioned closer to the second end than to the first end.

Abstract: The invention relates to weed mapping, monitoring and control, in particular to the mapping, monitoring and control of invasive annual grasses. A computer system comprises a receiving unit providing a processing unit with images of a geographical area, the images displaying the geographical area at points in time during a phenological cycle of a weed. At least two images depicting a weed at two different phenological stages may be used because two sequentially collected images are required in order to identify a characteristic temporal change. The processing unit analyzes the images to identify image areas showing a spectral signature characteristic of the weed. The processing unit identifies geographical sub-areas corresponding to the identified image areas and to create a weed distribution map with the identified geographical sub-areas marked as areas affected by the weed. The output unit is configured to output the map.

Abstract: Rail tension extraction devices and methods of extracting target(s) inside a patient's body are disclosed. The device includes a base assembly having a handle and an elongate base. The device additionally includes at least one magnet configured to engage a metallic target, and a capture element received in the base assembly and disposed adjacent to the at least one magnet. The capture element is configured to at least partially surround the metallic target engaged by the at least one magnet. The device further includes an outer tube configured to move relative to the elongate base between a locking position in which a distal end of the outer tube is adjacent the capture element and the at least one magnet to secure the metallic target therebetween, and an unlocking position in which the distal end of the outer tube is spaced from the capture element and the at least one magnet.