Abstract: Systems and related methods for supplying power to an implantable blood pump are provided. A system includes a base module and a plurality of energy storage devices. A first energy storage device is operatively coupled to the base module. A second energy storage device is operatively coupled to the first modular energy storage device. The energy storage devices are mechanically coupled in series, electrically coupled in parallel, and configured to provide redundant sources of power to drive an implantable blood pump.

Abstract: A method of self-testing a semiconductor chemical gas sensor comprises the steps of: applying power to a heating element; obtaining a measurement from a temperature sensing element; adjusting the power applied to the heating element until the obtained measurement from the temperature sensing element reaches a desired measurement; obtaining a measurement from a gas sensitive element when the desired measurement is reached; and comparing the obtained measurement from the gas sensitive element to a reference measurement. An alternate method comprises the steps of: applying power to the heating element; obtaining measurements from the gas sensitive element and the temperature sensing element; adjusting the power applied to the heating element to cause a change in the obtained measurement from the temperature sensing element and obtaining a change in measurement from the gas sensitive element; and determining if the obtained change in gas measurement is consistent with the change in temperature measurement.

Abstract: A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The strain sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a portion of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

Abstract: A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The strain sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a portion of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

Abstract: A pressure sensor for measuring the differential pressure of a first and a second fluid. The sensor includes a housing having an internal opening, a first diaphragm disposed in the opening and exposed to the first fluid, and a second diaphragm disposed in the opening and exposed to the second fluid. The first diaphragm and the second diaphragm are each made of a conductive material and coupled together such that the differential pressure of the first and second fluids deflects the first and second diaphragms in the same direction. The deflection of the first and second diaphragms can be sensed to determine the differential pressure.

Abstract: A method for forming micromachined devices out of a polycrystalline silicon substrate using deep reactive ion etching to form the micromachined device. The method comprises the steps of providing a bulk material substrate of polycrystalline silicon, and etching the bulk material using deep reactive ion etching to form the micromachined device. The present invention also includes a method for forming a micromachined device comprising the steps of providing a first layer of single crystal silicon and etching a first set of elements on the first layer. The method further includes the steps of providing a second layer of single crystal silicon, etching a second set of elements on the second layer, and joining the first and second layers together such that the crystal planes of the first layer and the second layer are misaligned and such that the first set and the second set of elements are properly aligned.