Abstract: A semiconductor device includes a substrate comprising a semiconductor material. The substrate has a surface that defines a surface normal direction and includes a P-N junction comprising an interface between a first region and a second region, where the first (second) region includes a first (second) dopant type, so as to have a first (second) conductivity type. The substrate includes a termination extension region disposed adjacent to the P-N junction and having an effective concentration of the second dopant type that is generally the effective concentration of the second dopant type in the second doped region. The substrate includes an adjust region disposed adjacent to the surface and between the surface and at least part of the termination extension region, where the effective concentration of the second dopant type generally decreases when moving from the termination extension region into the adjust region along the surface normal direction.

Abstract: A substrate having semiconductor material and a surface that supports a gate electrode and defines a surface normal direction is provided. The substrate can include a drift region including a first dopant type. A well region can be disposed adjacent to the drift region and proximal to the surface, and can include a second dopant type. A termination extension region can be disposed adjacent to the well region and extend away from the gate electrode, and can have an effective concentration of second dopant type that is generally less than that in the well region. An adjust region can be disposed between the surface and at least part of the termination extension region. An effective concentration of second dopant type may generally decrease when moving from the termination extension region into the adjust region along the surface normal direction.

Abstract: A substrate having semiconductor material and a surface that supports a gate electrode and defines a surface normal direction is provided. The substrate can include a drift region including a first dopant type. A well region can be disposed adjacent to the drift region and proximal to the surface, and can include a second dopant type. A termination extension region can be disposed adjacent to the well region and extend away from the gate electrode, and can have an effective concentration of second dopant type that is generally less than that in the well region. An adjust region can be disposed between the surface and at least part of the termination extension region. An effective concentration of second dopant type may generally decrease when moving from the termination extension region into the adjust region along the surface normal direction.