Abstract: A liquid coating device and method for coating a coatable composition on a workpiece to form a coating, wherein a parameter indicative of barometric pressure is measured and at least one thickness-affecting process parameter is adjusted in order to compensate for the effects of variations in barometric pressure on coating thickness uniformity.

Abstract: A liquid coating device and method for coating a coatable composition on a workpiece to form a coating, wherein a parameter indicative of barometric pressure is measured and at least one thickness-affecting process parameter is adjusted in order to compensate for the effects of variations in barometric pressure on coating thickness uniformity.

Abstract: A liquid coating device and method for coating a coatable composition on a workpiece to form a coating, wherein a parameter indicative of barometric pressure is measured and at least one thickness-affecting process parameter is adjusted in order to compensate for the effects of variations in barometric pressure on coating thickness uniformity.

Abstract: Systems and methods that make it possible to rapidly cycle a workpiece through a temperature/time profile over a wide temperature range, e.g., 0.degree. C. to 350.degree. C., without having to lift and transfer the workpiece between separate baking and chilling mechanisms. The present invention is based in part upon the concept of using a low thermal mass, thermally conductive heating member to support a workpiece, such as a microelectronic device, during both baking and chilling operations. While supporting the workpiece on one surface, the other surface of the heating member can be brought into and out of thermal contact with a relatively thermally massive chill plate to easily switch between baking and chilling operations. A simple mechanism is all that is required to either physically separate the heating member and chill plate to accomplish the most rapid heating, or the simple mechanism adjoins the heating member and chill plate to accomplish the most rapid chilling.

Abstract: An anti-reflective coating (ARC) (20) is formed over a reflective, conductive layer (18), such as polysilicon or aluminum, in a semiconductor device (10). The ARC is an aluminum nitride layer. During photolithography, the ARC absorbs radiation waves (30), particularly absorbing wavelengths under 300 nanometers, such as deep ultraviolet (DUV) radiation at 248 nanometers. Being absorbed by the ARC, the radiation waves are prevented from reflecting off the underlying conductive layer. Thus, resist mask (34) is patterned and developed true to the pattern on lithography mask (24), resulting in accurate replication into appropriate layers of the device.

Abstract: A lithographic method using double exposures, physical mask shifting, and light phase shifting is used to form masking features on a substrate masking layer. A first phase shifting mask (11) is placed in a first position adjacent a substrate (10). The substrate (10) is covered by the masking layer. The masking layer is exposed to light, or an equivalent energy source, through the first mask (11) to form a first plurality of unexposed regions of the masking layer. Either a second mask or the first mask (11) is placed adjacent the substrate (10) in a second position which is displaced from the first position in an X direction, a Y direction, and/or a rotational direction. A second exposure is used to form a second plurality of unexposed regions of the masking layer. The first and second pluralities of unexposed regions have common unexposed regions which are used to form the masking features.

Abstract: Integrated circuits with small feature sizes are obtained using a phase shifting mask which has reduced back reflection and improved optical contrast. These improvements result from reduced etching of the chrome and chrome oxide layers on the phase shifting mask. In one embodiment, the phase shifting mask is formed by depositing an image reversible photoresist layer (22) which overlies the optical mask (18). Forming a first exposed region (24) and an unexposed region (26) in the image reversible photoresist layer (22). Treating the first exposed region (24) to form a hardened first exposed region. Forming a second exposed region (30) within the remaining portion of the unexposed region (26) by exposing the back surface (16) of the substrate (12) to an optical illumination source. Removing the second exposed region (30) to uncover a portion (32) of the substrate (12) and to form an etch mask (34). The uncovered portion (32) of the substrate (12) is etched to form a trench region (38).