Abstract: A dial assembly for a master key controlled combination lock is disclosed herein, the dial assembly having: a dial having a front side, a back side and a gripping surface disposed therebetween, the front side having an opening therein; a key plug having a lock cylinder rotatably disposed therein, the lock cylinder having a key hole end and a lever end, the lock cylinder being configured to receive a master key having a particular key code sequence in the key hole end, the key plug being configured to be installed within the dial through the opening of the dial and the lever end is configured to actuate a combination lock; and a cover plate for securing the key plug in the dial, the cover plate having a face portion and an engagement portion, the face portion having an aperture extending therethrough, the aperture being configured to rotatably receive the keyhole end of the lock cylinder therein and the engagement portion is configured to secure the face portion in the opening of the dial when the cover plate

Abstract: A locking device and a method for unlocking the locking device are provided. The locking device includes a stationary plug having a first aperture extending therein configured to receive a key. The stationary plug further includes an outer surface, an inner surface defined by the first aperture, and at least a second aperture extending from the outer surface to the inner surface. The locking device further includes a housing having an outer wall disposed around at least a portion of the stationary plug. The outer wall has at least a third aperture extending therethrough. The locking device further includes a bolt member operably coupled to the outer wall of the housing. The locking device further includes a locking mechanism disposed in the third aperture of the housing and extending into the second aperture of the stationary plug. The locking mechanism is configured to allow rotation of the housing about the stationary plug when the key is inserted into the first aperture.

Abstract: A locking device and a method for unlocking the locking device are provided. The locking device includes a stationary plug having a first aperture extending therein configured to receive a key. The stationary plug further includes an outer surface, an inner surface defined by the first aperture, and at least a second aperture extending from the outer surface to the inner surface. The locking device further includes a housing having an outer wall disposed around at least a portion of the stationary plug. The outer wall has at least a third aperture extending therethrough. The locking device further includes a bolt member operably coupled to the outer wall of the housing. The locking device further includes a locking mechanism disposed in the third aperture of the housing and extending into the second aperture of the stationary plug. The locking mechanism is configured to allow rotation of the housing about the stationary plug when the key is inserted into the first aperture.

Abstract: A locking device and a method for unlocking the locking device are provided. The locking device includes a stationary plug having a first aperture extending therein configured to receive a key. The stationary plug further includes an outer surface, an inner surface defined by the first aperture, and at least a second aperture extending from the outer surface to the inner surface. The locking device further includes a housing having an outer wall disposed around at least a portion of the stationary plug. The outer wall has at least a third aperture extending therethrough. The locking device further includes a bolt member operably coupled to the outer wall of the housing. The locking device further includes a locking mechanism disposed in the third aperture of the housing and extending into the second aperture of the stationary plug. The locking mechanism is configured to allow rotation of the housing about the stationary plug when the key is inserted into the first aperture.

Abstract: Polysilicon electrical depletion in a polysilicon gate electrode is reduced by depositing the polysilicon under controlled conditions so as to vary the crystal grain size through the thickness of the polysilicon. The resulting CMOS transistor may have two or more depth-wise contiguous regions of respective crystalline grain size, and the selection of grain size may be directed to maximize dopant activation in the polysilicon near the gate dielectric and to tailor the resistance of the polysilicon above that first region and more distant from the gate dielectric. A region of polycrystalline silicon may have a varying grain size as a function of a distance measured from a surface of the dielectric film.