Abstract: A structure and method of handling a device wafer during through-silicon via (TSV) processing are described in which a device wafer is bonded to a temporary support substrate with a permanent thermosetting material. Upon removal of the temporary support substrate a planar frontside bonding surface including a reflowed solder bump and the permanent thermosetting material is exposed.

Abstract: Embodiments of the present disclosure describe techniques and configurations associated with forming a landing structure for a through-silicon via (TSV) using interconnect structures of interconnect layers. In eon embodiment, an apparatus includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a device layer disposed on the first surface of the semiconductor substrate, the device layer including one or more transistor devices, interconnect layers disposed on the device layer, the interconnect layers including a plurality of interconnect structures and one or more through-silicon vias disposed between the first surface and the second surface, wherein the plurality of interconnect structures include interconnect structures that are electrically coupled with the one or more TSVs and configured to provide one or more corresponding landing structures of the one or more TSVs. Other embodiments may be described and/or claimed.

Abstract: An archery bow holding device that is preferably mounted to a ball joint assembly for attachment to a table top, bench or like surface, and provides a movable mount for the archery bow holding device that holds an archery bow for performing work thereon. The preferred ball joint assembly includes a cylindrical housing that is slotted on opposite sides thereof from a center opening in the housing top and contains a ball that mounts a stem that the archery bow holding device is secured to, with the stem fitted through a slot through the housing top, to tilt between the slots and pivot when the ball in unlocked and, with the ball locked, provides a rigid mount to the archery bow holding device that includes a main beam that is bent to provide a rest for an archery bow limb positioned and clamped there against for an operator to work on.

Abstract: An embodiment integrates memory, such as spin-torque transfer magnetoresistive random access memory (STT-MRAM) within a logic chip. The STT-MRAM includes a magnetic tunnel junction (MTJ) with an upper MTJ layer, lower MTJ layer, and tunnel barrier directly contacting the upper MTJ layer and the lower MTJ layer; wherein the upper MTJ layer includes an upper MTJ layer sidewall and the lower MTJ layer includes a lower MTJ sidewall horizontally offset from the upper MTJ layer. Another embodiment includes a memory area, comprising a MTJ, and a logic area located on a substrate; wherein a horizontal plane intersects the MTJ, a first Inter-Layer Dielectric (ILD) material adjacent the MTJ, and a second ILD material included in the logic area, the first and second ILD materials being unequal to one another. In an embodiment the first and second ILDs directly contact one another. Other embodiments are described herein.

Abstract: An embodiment integrates memory, such as spin-torque transfer magnetoresistive random access memory (STT-MRAM) within a logic chip. The STT-MRAM includes a magnetic tunnel junction (MTJ) that has an upper MTJ layer, a lower MTJ layer, and a tunnel barrier directly contacting the upper MTJ layer and the lower MTJ layer; wherein the upper MTJ layer includes an upper MTJ layer sidewall and the lower MTJ layer includes a lower MTJ sidewall horizontally offset from the upper MTJ layer. Another embodiment includes a memory area, comprising a MTJ, and a logic area located on a substrate; wherein a horizontal plane intersects the MTJ, a first Inter-Layer Dielectric (ILD) material adjacent the MTJ, and a second ILD material included in the logic area, the first and second ILD materials being unequal to one another. Other embodiments are described herein.

Abstract: Embodiments of the present disclosure describe techniques and configurations associated with forming a landing structure for a through-silicon via (TSV) using interconnect structures of interconnect layers. In eon embodiment, an apparatus includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a device layer disposed on the first surface of the semiconductor substrate, the device layer including one or more transistor devices, interconnect layers disposed on the device layer, the interconnect layers including a plurality of interconnect structures and one or more through-silicon vias disposed between the first surface and the second surface, wherein the plurality of interconnect structures include interconnect structures that are electrically coupled with the one or more TSVs and configured to provide one or more corresponding landing structures of the one or more TSVs. Other embodiments may be described and/or claimed.

Abstract: Selective removal of on-die redistribution interconnect material from a scribe-line region is generally described. In one example, an apparatus includes a first semiconductor die having a redistribution layer comprising redistribution dielectric and one or more redistribution metal interconnects, a second semiconductor die coupled with the first semiconductor die, the second semiconductor die having a redistribution layer comprising redistribution dielectric and one or more redistribution metal interconnects, and a scribe-line region disposed between the first semiconductor die and second semiconductor die, the scribe-line region having a majority or substantially all of redistribution dielectric or redistribution metal, or suitable combinations thereof, selectively removed to enable die singulation through the scribe-line region.

Abstract: An archery bow holding device that is preferably mounted to a ball joint assembly for attachment to a table top, bench or like surface, and provides a movable mount for the archery bow holding device that holds an archery bow for performing work thereon. The preferred ball joint assembly includes a cylindrical housing that is slotted on opposite sides thereof from a center opening in the housing top and contains a ball that mounts a stem that the archery bow holding device is secured to, with the stem fitted through a slot through the housing top, to tilt between the slots and pivot when the ball in unlocked and, with the ball locked, provides a rigid mount to the archery bow holding device that includes a main beam that is bent to provide a rest for an archery bow limb positioned and clamped there against for an operator to work on.

Abstract: A 3D interconnect structure and method of manufacture are described in which a through-silicon vias (TSVs) and metal redistribution layers (RDLs) are formed using a dual damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and etch stop layer during the process flow.

Abstract: A structure and method of handling a device wafer during through-silicon via (TSV) processing are described in which a device wafer is bonded to a temporary support substrate with a permanent thermosetting material. Upon removal of the temporary support substrate a planar frontside bonding surface including a reflowed solder bump and the permanent thermosetting material is exposed.

Abstract: A 3D interconnect structure and method of manufacture are described in which metal redistribution layers (RDLs) are integrated with through-silicon vias (TSVs) and using a single damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and polish stop layer during the process flow.

Abstract: A ball joint assembly that is a movable mount for a work holding device for holding an item, such as a rifle or pistol, where the ball joint assembly is for seating on, or mounting onto, a table top, bench, or like surface. The ball joint assembly includes a cylindrical housing slotted on opposite sides thereof from a center opening in the housing top and contains a ball that rests on a plunger top end of a jacking screw that is turned in a round nut by a lever arm, and the ball joint assembly is fitted into the housing. Turning of the lever arm that is fitted through a housing lateral slot extends the plunger top into the ball, lifting the ball to lock it against a housing top concave surface, and which ball includes a stem extending through the housing top to tilt between the slots and pivot when the ball in unlocked, and the ball stem end includes a tool mounting for connection to the work holding devices.

Abstract: The invention relates to a method for determining if a test compound, or a mix of compounds, modulates the interaction between two proteins of interest. The determination is made possible via the use of two recombinant molecules, one of which contains the first protein a cleavage site for a proteolytic molecules, and an activator of a gene. The second recombinant molecule includes the second protein and the proteolytic molecule. If the test compound binds to the first protein, a reaction is initiated whereby the activator is cleaved, and activates a reporter gene.

Abstract: The present disclosure relates to the field of fabricating microelectronic devices, wherein a conductive adhesive is used as a temporary microelectronic wafer bonding adhesive to prevent damage to microelectronic devices resulting from electrical charge build-up on the microelectronic devices during the formation of through-silicon vias.

Abstract: Embodiments of buffer coatings for semiconductor and integrated circuit manufacturing are presented herein.

Abstract: The invention relates to a method for determining if a test compound, or a mix of compounds, modulates the interaction between two proteins of interest. The determination is made possible via the use of two recombinant molecules, one of which contains the first protein a cleavage site for a proteolytic molecules, and an activator of a gene. The second recombinant molecule includes the second protein and the proteolytic molecule. If the test compound binds to the first protein, a reaction is initiated whereby the activator is cleaved, and activates a reporter gene.

Abstract: An apparatus comprises a semiconductor substrate having a device layer, a plurality of metallization layers, a passivation layer, and a metal bump formed on the passivation layer that is electrically coupled to at least one of the metallization layers. The apparatus further includes a solder limiting layer formed on the passivation layer that masks an outer edge of the top surface of the metal bump, thereby making the outer edge of the top surface non-wettable to a solder material.

Abstract: Embodiments of an apparatus and methods for forming thick metal interconnect structures for integrated structures are generally described herein. Other embodiments may be described and claimed.

Abstract: A ball joint assembly and work holding device where the ball joint assembly provides a movable mount for different work holding devices that each provide for holding an item, such as a fire arm, archery bow and/or the like, where the ball joint assembly is for seating on, or mounting onto, a table top, bench, or like surface. The ball joint assembly includes a cylindrical housing slotted on opposite sides thereof from a center opening in the housing top and contains a ball that rests on a plunger top end of a jacking screw that is turned in a round nut by a lever arm, and the ball joint assembly is fitted into the housing.

Abstract: A multi-layer thick metallization structure for a microelectronic device includes a first barrier layer (111), a first metal layer (112) over the first barrier layer, a first passivation layer (113) over the first metal layer, a via structure (114) extending through the first passivation layer, a second barrier layer (115) over the first passivation layer and in the via structure, a second metal layer (116) over the second barrier layer, and a second passivation layer (117) over the second metal layer and the first passivation layer.