Abstract: A back gate bias voltage is applied to the underside of a lateral bipolar transistor to desensitize a portion of the collector-base depletion region to changes in the collector-base voltage. Emitter-collector current flows through an active base region bypassing the portion of the collector-base depletion region that remains sensitive to the collector bias. This allows for a control over the charge in the active base region by the back gate bias, generally independent of the collector-base bias. The transistor is preferably implemented in a silicon-on-insulator-on-silicon (SOIS) configuration, with the back gate bias applied to a doped silicon substrate. The base doping concentration and the thickness of the underlying insulator are preferably selected to produce an inversion layer in the base region adjacent the insulating layer, thereby reducing the collector access resistance.

Abstract: A back gate bias voltage is applied to the underside of a lateral bipolar transistor to desensitize a portion of the collector-base depletion region to changes in the collector-base voltage. Emitter-collector current flows through an active base region bypassing the portion of the collector-base depletion region that remains sensitive to the collector bias. This allows for a control over the charge in the active base region by the back gate bias, generally independent of the collector-base bias. The transistor is preferably implemented in a silicon-on-insulator-on-silicon (SOIS) configuration, with the back gate bias applied to a doped silicon substrate. The base doping concentration and the thickness of the underlying insulator are preferably selected to produce an inversion layer in the base region adjacent the insulating layer, thereby reducing the collector access resistance.