Abstract: With shrinking dimensions, and closely spaced runners, capacitive coupling between bitlines in dual port SRAMS becomes an important design issue. Techniques for reducing that coupling are described. A shielding runner placed between the read and write bitlines and tied to V.sub.DD or V.sub.SS substantially reduces unwanted crosstalk. Word lines can be similarly isolated.

Abstract: The specification describes interconnection layouts for chip-on-chip packages using solder bump interchip connections as vias between a single level metal interconnection pattern on the lower support IC chip and another single level interconnection pattern on the upper IC chip. This arrangement allows for the formation of air isolated crossovers of features on either chip.

Abstract: The invention is directed to a memory cell with a floating gate and a method for charging the floating gate using channel-initiated secondary electron injection (CISEI). In the device of the present invention, a positive bias voltage of about 1.1 volts to about 3.3 volts is applied between the drain and the source when introducing charge onto the floating gate. A negative bias voltage of about -0.5 volts or more negative is applied to the substrate and the source. The drain substrate bias induces a sufficient amount of secondary hot electrons to be formed with a sufficient amount of energy to overcome the energy barrier between the substrate and the floating gate to charge the floating gate.