Patents by Inventor Kevin Ka Kei Leung
Kevin Ka Kei Leung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200066767Abstract: A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light and a global shutter gate transistor coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge. The isolation structure is filled with tungsten and is coupled to receive a variable bias signal to control a bias of the isolation structure. The variable bias signal is set to a first bias value during a transfer of the image charge to the storage transistor. The variable bias signal is set to a second bias value during a transfer of the image charge from the storage transistor.Type: ApplicationFiled: August 22, 2018Publication date: February 27, 2020Inventor: Kevin Ka Kei Leung
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Patent number: 10566359Abstract: A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light and a global shutter gate transistor coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge. The isolation structure is filled with tungsten and is coupled to receive a variable bias signal to control a bias of the isolation structure. The variable bias signal is set to a first bias value during a transfer of the image charge to the storage transistor. The variable bias signal is set to a second bias value during a transfer of the image charge from the storage transistor.Type: GrantFiled: August 22, 2018Date of Patent: February 18, 2020Assignee: OmniVision Technologies, Inc.Inventor: Kevin Ka Kei Leung
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Patent number: 10141360Abstract: An imaging system includes a pixel array of pixel cells with each one of the pixel cells including a photodiode disposed in a semiconductor material, a global shutter gate transistor, disposed in the semiconductor material and coupled to the photodiode, a storage transistor disposed in the semiconductor material, an optical isolation structure disposed in the semiconductor material to isolate a sidewall of the storage transistor from stray light and stray charge. The optical isolation structure also includes a deep trench isolation structure that is filled with tungsten and a P+ passivation formed over an interior sidewall of the deep trench optical isolation structure. Each one of the pixel cells also include control circuitry coupled to the pixel array to control operation of the pixel array and readout circuitry coupled to the pixel array to readout image data from the plurality of pixels.Type: GrantFiled: September 29, 2016Date of Patent: November 27, 2018Assignee: OmniVision Technologies, Inc.Inventors: Kevin Ka Kei Leung, Dajiang Yang
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Patent number: 9583527Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material adjacent to a photodiode in the plurality of photodiodes. A transfer gate is disposed to transfer image charge generated in the photodiode into the floating diffusion. A first electrical contact with a first cross sectional area is coupled to the transfer gate. A second electrical contact with a second cross sectional area is coupled to the floating diffusion, and the second cross sectional area is greater than the first cross sectional area. The image sensor also includes pixel transistor region disposed in the semiconductor material including a first electrical connection to the semiconductor material. A third electrical contact with a third cross sectional area is coupled to the first electrical connection to the semiconductor material, and the third cross sectional area is greater than the first cross sectional area.Type: GrantFiled: January 28, 2016Date of Patent: February 28, 2017Assignee: OmniVision Technologies, Inc.Inventors: Kevin Ka Kei Leung, Hsin-Neng Tai, Hung-Ming Weng
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Publication number: 20170018583Abstract: An imaging system includes a pixel array of pixel cells with each one of the pixel cells including a photodiode disposed in a semiconductor material, a global shutter gate transistor, disposed in the semiconductor material and coupled to the photodiode, a storage transistor disposed in the semiconductor material, an optical isolation structure disposed in the semiconductor material to isolate a sidewall of the storage transistor from stray light and stray charge. The optical isolation structure also includes a deep trench isolation structure that is filled with tungsten and a P+ passivation formed over an interior sidewall of the deep trench optical isolation structure. Each one of the pixel cells also include control circuitry coupled to the pixel array to control operation of the pixel array and readout circuitry coupled to the pixel array to readout image data from the plurality of pixels.Type: ApplicationFiled: September 29, 2016Publication date: January 19, 2017Inventors: Kevin Ka Kei Leung, Dajiang Yang
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Patent number: 9484370Abstract: A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed to the photodiode. A global shutter gate transistor disposed in the semiconductor material and is coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An optical isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge in the semiconductor material outside of the storage transistor. The optical isolation structure is filled with tungsten.Type: GrantFiled: October 27, 2014Date of Patent: November 1, 2016Assignee: OmniVision Technologies, Inc.Inventors: Kevin Ka Kei Leung, Dajiang Yang
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Publication number: 20160118438Abstract: A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed to the photodiode. A global shutter gate transistor disposed in the semiconductor material and is coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An optical isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge in the semiconductor material outside of the storage transistor. The optical isolation structure is filled with tungsten.Type: ApplicationFiled: October 27, 2014Publication date: April 28, 2016Inventors: Kevin Ka Kei Leung, Dajiang Yang
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Patent number: 9282265Abstract: A camera device includes a single imaging sensor, a plurality of imaging objectives associated with the single imaging sensor, and a plurality of dedicated image areas within the single imaging sensor, each of the plurality of dedicated image areas corresponding to a respective one of the plurality of imaging objectives, such that images formed by each of the plurality of imaging objectives may be recorded by the single imaging sensor.Type: GrantFiled: September 9, 2013Date of Patent: March 8, 2016Assignee: OmniVision Technologies, Inc.Inventors: Kevin Ka Kei Leung, Wen Hua Lin
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Publication number: 20150070466Abstract: A camera device includes a single imaging sensor, a plurality of imaging objectives associated with the single imaging sensor, and a plurality of dedicated image areas within the single imaging sensor, each of the plurality of dedicated image areas corresponding to a respective one of the plurality of imaging objectives, such that images formed by each of the plurality of imaging objectives may be recorded by the single imaging sensor.Type: ApplicationFiled: September 9, 2013Publication date: March 12, 2015Applicant: OmniVision Technologies, Inc.Inventors: Kevin Ka Kei Leung, Wen Hua Lin
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Patent number: 8804032Abstract: An apparatus includes an image sensor module with a lens stack disposed on the image sensor module. A protective tube is disposed on the image sensor module and encloses the lens stack. The protective tube includes an outer wall having a snap-in latch element disposed thereon. A metal housing encloses the protective tube. The metal housing includes a housing foot and inner wall having an opposite snap-in latch element disposed thereon. The image sensor module is adapted to be secured between the housing foot of the metal housing and the protective tube when the opposite snap-in latch element of the metal housing is engaged with the snap-in latch element of the protective tube.Type: GrantFiled: March 30, 2012Date of Patent: August 12, 2014Assignee: OmniVision Technologies, Inc.Inventors: Kevin Ka Kei Leung, Wen Hua Lin
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Publication number: 20130258181Abstract: An apparatus includes an image sensor module with a lens stack disposed on the image sensor module. A protective tube is disposed on the image sensor module and encloses the lens stack. The protective tube includes an outer wall having a snap-in latch element disposed thereon. A metal housing encloses the protective tube. The metal housing includes a housing foot and inner wall having an opposite snap-in latch element disposed thereon. The image sensor module is adapted to be secured between the housing foot of the metal housing and the protective tube when the opposite snap-in latch element of the metal housing is engaged with the snap-in latch element of the protective tube.Type: ApplicationFiled: March 30, 2012Publication date: October 3, 2013Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Kevin Ka Kei Leung, Wen Hua Lin