Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Abstract: An oxidation barrier for non-volatile memory with materials sensitive to temperature and/or cross contamination (e.g., chalcogenide materials) are described The barrier can be formed, for example, around the boundaries of a non-volatile memory tile (also known as a block or sub-array). For example, a non-volatile memory device can include an oxidation barrier on a side wall of a trench between adjacent memory tiles.

Abstract: An oxidation barrier for non-volatile memory with materials sensitive to temperature and/or cross contamination (e.g., chalcogenide materials) are described The barrier can be formed, for example, around the boundaries of a non-volatile memory tile (also known as a block or sub-array). For example, a non-volatile memory device can include an oxidation barrier on a side wall of a trench between adjacent memory tiles.

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Abstract: An oxidation barrier for non-volatile memory with materials sensitive to temperature and/or cross contamination (e.g., chalcogenide materials) are described The barrier can be formed, for example, around the boundaries of a non-volatile memory tile (also known as a block or sub-array). For example, a non-volatile memory device can include an oxidation barrier on a side wall of a trench between adjacent memory tiles.

Abstract: An apparatus for activating a wellbore tool may include a first sub, gas transfer sub, and a second sub. The first sub has an igniter that generates a flame output that ignites a power charge. The power charge generates a high pressure gas when ignited by the flame output. The gas transfer sub has a first end receiving a portion of the power charge, a longitudinal bore, and a plurality of flow passages radiating from the longitudinal bore. The flow passages provide fluid communication between the longitudinal bore and the first sub. The second sub includes a shaft having a first end connectable with the gas transfer sub.

Abstract: An apparatus for activating a wellbore tool includes a cylinder, a shaft, and a pressure dissipater. The cylinder has a first inner surface defining a smooth bore section and a second inner surface adjacent to the first inner surface. The shaft has a piston section that includes at least one seal forming a fluid seal with the first inner surface when the seal is at a nominal diameter. The pressure dissipater is formed along the second inner surface of the cylinder, the pressure dissipater contacts and physically destabilizes the at least one seal after the at least one seal exits the smooth bore section.

Abstract: A neutron imaging system detects both the phase shift and absorption of neutrons passing through an object. The neutron imaging system is based on either of two different neutron wavefront sensor techniques: 2-D shearing interferometry and Hartmann wavefront sensing. Both approaches measure an entire two-dimensional neutron complex field, including its amplitude and phase. Each measures the full-field, two-dimensional phase gradients and, concomitantly, the two-dimensional amplitude mapping, requiring only a single measurement.

Abstract: An apparatus for activating a wellbore tool includes a cylinder, a shaft, and a pressure dissipater. The cylinder has a first inner surface defining a smooth bore section and a second inner surface adjacent to the first inner surface. The shaft has a piston section that includes at least one seal forming a fluid seal with the first inner surface when the seal is at a nominal diameter. The pressure dissipater is formed along the second inner surface of the cylinder, the pressure dissipater contacts and physically destabilizes the at least one seal after the at least one seal exits the smooth bore section.

Abstract: An apparatus for activating a wellbore tool may include a first sub having a an igniter disposed in the first chamber, the igniter generating a flame output when ignited and a power charge disposed in the second chamber, the power charge generating a high pressure gas when ignited by the flame output. The well tool also includes a gas transfer sub connectable with the first sub, the gas transfer sub having: a first end receiving a portion of the power charge, a longitudinal bore, and a plurality of flow passages radiating from the longitudinal bore, the plurality of flow passages providing fluid communication between the longitudinal bore and the second chamber of the first sub; and a second sub connectable with the gas transfer sub.

Abstract: A neutron imaging system detects both the phase shift and absorption of neutrons passing through an object. The neutron imaging system is based on either of two different neutron wavefront sensor techniques: 2-D shearing interferometry and Hartmann wavefront sensing. Both approaches measure an entire two-dimensional neutron complex field, including its amplitude and phase. Each measures the full-field, two-dimensional phase gradients and, concomitantly, the two-dimensional amplitude mapping, requiring only a single measurement.

Abstract: A method for solidifying an oil-contaminated aqueous waste in situ or ex situ includes the step of combining the oil-contaminated waste with a clay, a cement and a sulfite salt solidification agent to form a solidified waste matrix, wherein the solidification agent undergoes hydration and cementation reactions in the waste matrix in the presence of water. Optionally, heavy metal stabilizing agents can also be combined with the waste.