Abstract: The invention provides novel polypeptides having at least one biological activity of cardiotrophin and improved biologic drug-like properties, and polynucleotides encoding the polypeptides of the invention. The polypeptides of the invention can be used therapeutically, such as, for example, in methods of tissue regeneration.

Abstract: In some implementations, a register file has a plurality of read ports for providing data to a micro-operation during execution of the micro-operation. For example, the micro-operation may utilize at least two data sources, with at least one first data source being utilized at least one pipeline stage earlier than at least one second data source. A number of register file read ports may be allocated for executing the micro-operation. A bypass calculation is performed during a first pipeline stage to detect whether the at least one second data source is available from a bypass network. During a subsequent second pipeline stage, when the at least one second data source is detected to be available from the bypass network, the number of the read ports allocated to the micro-operation may be reduced.

Abstract: Embodiments of the present invention relate to a system and method for allocating resources in a distributed computational system. Embodiments of the present invention may comprise a plurality of user agent programs, each adapted to place a bid on behalf of a user for computational resources based on a preference for a desired set of the computational resources. Additionally, embodiments of the present invention may comprise an auctioneer program adapted to receive the bid from each of the plurality of user agent programs and to determine entitlement to the computational resources based on an evaluation of the bids. Further, embodiments of the present invention may comprise a bank program adapted to manage records relating to currency corresponding to each of the user agent programs and to facilitate transfer of currency based on an outcome of the evaluation of the bids.

Abstract: Embodiments of the present invention relate to a system and method for allocating resources in a distributed computational system. Embodiments of the present invention may comprise a plurality of user agent programs, each adapted to place a bid on behalf of a user for computational resources based on a preference for a desired set of the computational resources. Additionally, embodiments of the present invention may comprise an auctioneer program adapted to receive the bid from each of the plurality of user agent programs and to determine entitlement to the computational resources based on an evaluation of the bids. Further, embodiments of the present invention may comprise a bank program adapted to manage records relating to currency corresponding to each of the user agent programs and to facilitate transfer of currency based on an outcome of the evaluation of the bids.

Abstract: A dual semiconductor wafer slippage, or loss, and water-resistant sensor holder for chemical mechanical polishing (CMP) semiconductor fabrication equipment is disclosed. The holder has a body and a cover. The body is designed to hold two wafer slippage sensors at an angle to a vertical plane, such as substantially fifteen degrees, and has a window to allow the sensors to detect wafer slippage. The cover is situated over the window of the body to prevent slurry from spraying and drying onto the sensors during high-pressure rinse cleaning of a platen of the CMP semiconductor fabrication equipment.

Abstract: An interactive ride-on toy, having a stuffed toy horse's head which includes ears, a movable mouth and is connected to a stick. One or more buttons, each with an icon depicting an image, is positioned on one or both ears of the horse's head. An electronically programmed chip responds to activation of the button to operate a speaker and a mechanism for moving the horse's mouth, the speaker playing sounds relating to the image depicted on each button.

Abstract: A cassette tub for holding at least one wafer cassette in a tilted position for accessing by a robot blade by utilizing a cassette tub pin assembly to ensure the tilt angle of the wafer cassette is described. The cassette tub is filled with water such that wafers during a chemical mechanical polishing process may be stored therein without any residual slurry solution solidified on the surface of the wafer, and thus eliminating the generation of any contaminating particles or abrasive particles which may cause severe scratching in a subsequent chemical mechanical polishing process. The cassette tub pin assembly is securely mounted to a mounting reel in the cassette tub such that the angle of the wafer cassette is ensured.

Abstract: A dual semiconductor wafer slippage, or loss, and water-resistant sensor holder for chemical mechanical polishing (CMP) semiconductor fabrication equipment is disclosed. The holder has a body and a cover. The body is designed to hold two wafer slippage sensors at an angle to a vertical plane, such as substantially fifteen degrees, and has a window to allow the sensors to detect wafer slippage. The cover is situated over the window of the body to prevent slurry from spraying and drying onto the sensors during high-pressure rinse cleaning of a platen of the CMP semiconductor fabrication equipment.

Abstract: A cassette tub for holding at least one wafer cassette in a tilted position for accessing by a robot blade by utilizing a cassette tub pin assembly to ensure the tilt angle of the wafer cassette is described. The cassette tub is filled with water such that wafers during a chemical mechanical polishing process may be stored therein without any residual slurry solution solidified on the surface of the wafer, and thus eliminating the generation of any contaminating particles or abrasive particles which may cause severe scratching in a subsequent chemical mechanical polishing process. The cassette tub pin assembly is securely mounted to a mounting reel in the cassette tub such that the angle of the wafer cassette is ensured.

Abstract: An interactive ride-on toy, having a stuffed toy horse's head which includes ears, a movable mouth and is connected to a stick. One or more buttons, each with an icon depicting an image, is positioned on one or both ears of the horse's head. An electronically programmed chip responds to activation of the button to operate a speaker and a mechanism for moving the horse's mouth, the speaker playing sounds relating to the image depicted on each button.

Abstract: An interactive ride-on toy, having a stuffed toy horse's head which includes ears, a movable mouth and is connected to a stick. One or more buttons, each with an icon depicting an image, is positioned on one or both ears of the horse's head. An electronically programmed chip responds to activation of the button to operate a speaker and a mechanism for moving the horse's mouth, the speaker playing sounds relating to the image depicted on each button.

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract: A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate.

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract: A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate.