Patents by Inventor Kevin Leedy

Kevin Leedy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8728861
    Abstract: A method is provided for fabricating a thin film transistor. A plurality of layers is deposited on a substrate. The plurality of layers includes a conductive gate contact layer, a gate insulator layer, an undoped channel layer, an etch-stop layer, and a conductive contact layer. The etch-stop layer is positioned between the conductive contact layer and the undoped channel layer. A portion of the conductive contact layer is selectively removed while removal of a portion of the undoped channel layer is prevented by the etch-stop layer during the selective removal. A portion of the etch-stop layer is selectively removed and an exposed portion of the etch-stop layer is converted from a conductor to an insulator by oxidizing the exposed portion of the etch-stop layer in air. A portion of remaining layers of the plurality of layers is selectively removed to form the thin film transistor.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: May 20, 2014
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Burhan Bayraktaroglu, Kevin Leedy
  • Publication number: 20130095606
    Abstract: A method is provided for fabricating a thin film transistor. A plurality of layers is deposited on a substrate. The plurality of layers includes a conductive gate contact layer, a gate insulator layer, an undoped channel layer, an etch-stop layer, and a conductive contact layer. The etch-stop layer is positioned between the conductive contact layer and the undoped channel layer. A portion of the conductive contact layer is selectively removed while removal of a portion of the undoped channel layer is prevented by the etch-stop layer during the selective removal. A portion of the etch-stop layer is selectively removed and an exposed portion of the etch-stop layer is converted from a conductor to an insulator by oxidizing the exposed portion of the etch-stop layer in air. A portion of remaining layers of the plurality of layers is selectively removed to form the thin film transistor.
    Type: Application
    Filed: October 12, 2011
    Publication date: April 18, 2013
    Applicant: Government of the United States, as represented by the Secretary of the Air Force
    Inventors: Burhan Bayraktaroglu, Kevin Leedy
  • Publication number: 20070044289
    Abstract: A digital variable capacitor package is provided as having a ground plane disposed on predetermined portion of the top surface of a substrate. An elongated signal electrode may also be disposed on the substrate and including a first end defining an input and a second end extending to a substantially central region of the top surface of the substrate. This elongated signal electrode is disposed to be electrically isolated from the ground plane. A number of elongated cantilevers are disposed on the substrate and each include first ends coupled to the second end of the signal electrode and each further include second ends suspended over different predetermined portions of the ground plane. In operation, one or more of the cantilevers may be actuated to move portion thereof into close proximity to the ground plane for providing one or more discrete capacitance values.
    Type: Application
    Filed: August 31, 2005
    Publication date: March 1, 2007
    Inventors: John Ebel, Rebecca Cortez, Richard Strawser, Kevin Leedy