Patents by Inventor Kevin Peterlinz
Kevin Peterlinz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11913874Abstract: The system includes a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulse trains for use in multi-wavelength time-sequential optical metrology.Type: GrantFiled: April 5, 2021Date of Patent: February 27, 2024Assignee: KLA CorporationInventors: Andrei V. Shchegrov, Lawrence D. Rotter, David Y. Wang, Andrei Veldman, Kevin Peterlinz, Gregory Brady, Derrick A. Shaughnessy
-
Patent number: 11119050Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.Type: GrantFiled: May 20, 2020Date of Patent: September 14, 2021Assignee: KLA CorporationInventors: Noam Sapiens, Shankar Krishnan, David Y. Wang, Alexander Buettner, Kerstin Purrucker, Kevin A. Peterlinz
-
Publication number: 20210223166Abstract: The system includes a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulse trains for use in multi-wavelength time-sequential optical metrology.Type: ApplicationFiled: April 5, 2021Publication date: July 22, 2021Inventors: Andrei V. Shchegrov, Lawrence D. Rotter, David Y. Wang, Andrei Veldman, Kevin Peterlinz, Gregory Brady, Derrick A. Shaughnessy
-
Patent number: 10969328Abstract: The system includes a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulse trains for use in multi-wavelength time-sequential optical metrology.Type: GrantFiled: February 25, 2019Date of Patent: April 6, 2021Assignee: KLA CorporationInventors: Andrei V. Shchegrov, Lawrence D. Rotter, David Y. Wang, Andrei Veldman, Kevin Peterlinz, Gregory Brady, Derrick A. Shaughnessy
-
Publication number: 20200284733Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.Type: ApplicationFiled: May 20, 2020Publication date: September 10, 2020Inventors: Noam Sapiens, Shankar Krishnan, David Y. Wang, Alexander Buettner, Kerstin Purrucker, Kevin A. Peterlinz
-
Patent number: 10690602Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.Type: GrantFiled: February 14, 2018Date of Patent: June 23, 2020Assignee: KLA-Tencor CorporationInventors: Noam Sapiens, Shankar Krishnan, David Y. Wang, Alexander Buettner, Kerstin Purrucker, Kevin A. Peterlinz
-
Patent number: 10648796Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.Type: GrantFiled: January 31, 2018Date of Patent: May 12, 2020Assignee: KLA-Tencor CorporationInventors: Noam Sapiens, Kevin A. Peterlinz, Alexander Buettner, Kerstin Purrucker, Andrei V. Shchegrov
-
Patent number: 10612916Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.Type: GrantFiled: October 15, 2017Date of Patent: April 7, 2020Assignee: KLA-Tencor CorporationInventors: Andrei V. Shchegrov, Shankar Krishnan, Kevin Peterlinz, Thaddeus Gerard Dziura, Noam Sapiens, Stilian Ivanov Pandev
-
Patent number: 10438825Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.Type: GrantFiled: August 28, 2017Date of Patent: October 8, 2019Assignee: KLA-Tencor CorporationInventors: Prateek Jain, Daniel Wack, Kevin A. Peterlinz, Andrei V. Shchegrov, Shankar Krishnan
-
Publication number: 20190195782Abstract: The system includes a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulse trains for use in multi-wavelength time-sequential optical metrology.Type: ApplicationFiled: February 25, 2019Publication date: June 27, 2019Inventors: Andrei V. Shchegrov, Lawrence D. Rotter, David Y. Wang, Andrei Veldman, Kevin Peterlinz, Gregory Brady, Derrick A. Shaughnessy
-
Patent number: 10234271Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.Type: GrantFiled: August 10, 2018Date of Patent: March 19, 2019Assignee: KLA-Tencor CorporationInventors: Jiyou Fu, Noam Sapiens, Kevin A. Peterlinz, Stilian Ivanov Pandev
-
Patent number: 10215688Abstract: The system includes a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulse trains for use in multi-wavelength time-sequential optical metrology.Type: GrantFiled: July 22, 2016Date of Patent: February 26, 2019Assignee: KLA-Tencor CorporationInventors: Andrei V. Shchegrov, Lawrence D. Rotter, David Y. Wang, Andrei Veldman, Kevin Peterlinz, Gregory Brady, Derrick A. Shaughnessy
-
Publication number: 20180347961Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.Type: ApplicationFiled: August 10, 2018Publication date: December 6, 2018Inventors: Jiyou Fu, Noam Sapiens, Kevin A. Peterlinz, Stilian Ivanov Pandev
-
Patent number: 10101676Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light that is projected onto an overlay metrology target such that the direction of the line shaped beam is aligned with the direction of extent of a grating structure of the overlay metrology target. Collected light is dispersed across a detector according to AOI in one direction and according to wavelength in another direction. The measured signal at each detector pixel is associated with a particular AOI and wavelength. The collected light includes first order diffracted light, zero order diffracted light, or a combination thereof. In some embodiments, first order diffracted light and zero order diffracted light are detected over separate areas of the detector.Type: GrantFiled: September 20, 2016Date of Patent: October 16, 2018Assignee: KLA—Tencor CorporationInventors: Jiyou Fu, Noam Sapiens, Kevin A. Peterlinz, Stilian Ivanov Pandev
-
Patent number: 10072921Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.Type: GrantFiled: December 4, 2015Date of Patent: September 11, 2018Assignee: KLA-Tencor CorporationInventors: Jiyou Fu, Noam Sapiens, Kevin A. Peterlinz, Stilian Ivanov Pandev
-
Publication number: 20180238814Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.Type: ApplicationFiled: February 14, 2018Publication date: August 23, 2018Inventors: Noam Sapiens, Shankar Krishnan, David Y. Wang, Alexander Buettner, Kerstin Purrucker, Kevin A. Peterlinz
-
Publication number: 20180180406Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.Type: ApplicationFiled: January 31, 2018Publication date: June 28, 2018Inventors: Noam Sapiens, Kevin A. Peterlinz, Alexander Buettner, Kerstin Purrucker, Andrei V. Shchegrov
-
Patent number: 9915524Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.Type: GrantFiled: May 11, 2015Date of Patent: March 13, 2018Assignee: KLA-Tencor CorporationInventors: Noam Sapiens, Kevin A. Peterlinz, Alexander Buettner, Kerstin Purrucker, Andrei V. Shchegrov
-
Publication number: 20180061691Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.Type: ApplicationFiled: August 28, 2017Publication date: March 1, 2018Inventors: Prateek Jain, Daniel Wack, Kevin A. Peterlinz, Andrei V. Shchegrov, Shankar Krishnan
-
Publication number: 20180051984Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.Type: ApplicationFiled: October 15, 2017Publication date: February 22, 2018Inventors: Andrei V. Shchegrov, Shankar Krishnan, Kevin Peterlinz, Thaddeus Gerard Dziura, Noam Sapiens, Stilian Ivanov Pandev