Abstract: The present disclosure generally relates to displaying information related to a physical activity. In some embodiments, methods and user interfaces for managing the display of information related to a physical activity are described.

Abstract: Semiconductor manufacturing tools with chemical delivery systems, such as precursor distribution system, use reservoir assemblies as part of a distribution system. One reservoir assembly includes: a canister comprising at least one sidewall, a top, and a bottom encompassing an interior volume therein; an inlet port and an outlet port in fluid communication with the interior volume; an inlet valve for controlling fluid communication between the inlet port and the interior volume; and an outlet valve for controlling fluid communication between the outlet port and the interior volume, wherein at least one of the inlet valve or the outlet valve comprises a dual-function hybrid valve.

Abstract: Embodiments of the present invention generally relate to a hydride vapor phase epitaxy (HVPE) apparatus that utilizes a high temperature gas distribution device and plasma generation to form an activated precursor gas used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, plasma is formed from a nitrogen containing precursor within a gas distribution device prior to injection into a processing region of the HVPE apparatus. In another embodiment, plasma is formed from a nitrogen containing precursor within the processing region by using the gas distribution device as an electrode for forming the plasma in the processing region. In each embodiment, a second precursor gas may be separately introduced into the processing region of the HVPE apparatus through the gas distribution device without mixing with the nitrogen containing precursor prior to entering the processing region.

Abstract: Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases.

Abstract: Semiconductor manufacturing tools with chemical delivery systems, such as precursor distribution system, use reservoir assemblies as part of a distribution system. One reservoir assembly includes: a canister comprising at least one sidewall, a top, and a bottom encompassing an interior volume therein; an inlet port and an outlet port in fluid communication with the interior volume; an inlet valve for controlling fluid communication between the inlet port and the interior volume; and an outlet valve for controlling fluid communication between the outlet port and the interior volume, wherein at least one of the inlet valve or the outlet valve comprises a dual-function hybrid valve.

Abstract: The invention provides switching arrangments for use in digital telecommunications exchange systems for local subscriber access and comprises a selector means (PUBS) which is arranged to interface between a plurality of time division multiplex highway groups (G0 to G3) and a plurality of channel digital traffic paths (C0 to C5). The selector means (PUBS) is microprocessor controlled (MCI) to effect a plurality of different switching connectivity modes enabling bothway communication between various combinations of the time division multiplex highway groups and the channel traffic paths when the input and output data rates (1 Mbit/sec, 64 Mbit/sec or 32 Mbit/sec) of the particular connectivity mode is either compatible or incompatible.