Abstract: A method of cooling a substrate during processing includes processing a substrate supported by a substrate holder where the substrate is heated by the processing, cooling the substrate while processing the substrate by radiating heat from the substrate holder, and maintaining the substrate at a steady temperature to within a tolerance while processing the substrate. The substrate is maintained at the steady temperature by heating the substrate holder such that heat transferred from the substrate by radiating heat from the substrate holder substantially balances heat transferred to the substrate by processing the substrate and by heating the substrate holder.

Abstract: The present invention provides techniques to more accurately control the process performance of treatments in which microelectronic substrates are treated by pressurized fluids that are sprayed onto the substrates in a vacuum process chamber control strategies are used that adjust mass flow rate responsive to pressure readings in order to hold the pressure of a pressurized feed constant. In these embodiments, the mass flow rate will tend to vary in order to maintain pressure uniformity.

Abstract: A method of scanning a substrate includes immobilizing a substrate on a substrate holder within a processing chamber and performing a pass of a parallel raster pattern by synchronously driving a first rotary drive and a second rotary drive to move the substrate relative to a processing apparatus focused on a localized spot on the substrate, the first rotary drive being coupled to a proximal end of a pendulum arm and the second rotary drive being mounted at a distal end of the pendulum arm and to the substrate holder. Driving the first rotary drive during the pass includes moving the pendulum arm in a first arc motion for a first portion of the pass while the localized spot is on the substrate, and then moving the pendulum arm in an opposite second arc motion for a second portion of the pass while the localized spot is on the substrate.

Abstract: The present invention provides techniques to more accurately control the process performance of treatments in which microelectronic substrates are treated by pressurized fluids that are sprayed onto the substrates in a vacuum process chamber. control strategies are used that adjust mass flow rate responsive to pressure readings in order to hold the pressure of a pressurized feed constant. In these embodiments, the mass flow rate will tend to vary in order to maintain pressure uniformity.

Abstract: The present invention provides techniques to more accurately control the process performance of treatments in which microelectronic substrates are treated by pressurized fluids that are sprayed onto the substrates in a vacuum process chamber. control strategies are used that adjust mass flow rate responsive to pressure readings in order to hold the pressure of a pressurized feed constant. In these embodiments, the mass flow rate will tend to vary in order to maintain pressure uniformity.

Abstract: This disclosure relates to a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The systems process chambers are connected to each other via transfer chambers used to move the workpieces, in the controlled environment, between the process chambers. The transfer chambers include a measurement region with dedicated workpiece support chucks capable of translating and/or rotating the workpiece during the measurement.

Abstract: This disclosure relates to a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The systems process chambers are connected to each other via transfer chambers used to move the workpieces, in the controlled environment, between the process chambers. Further, the pass-through chambers may be disposed between the transfer chambers or between the transfer chamber and the process chamber. The pass-through chambers may include a measurement region to measure workpiece attributes when the workpiece is moved through or placed in the pass-through chamber. The transfer chambers may also have separate measurement regions within their internal space to measure other attributes of the workpiece.

Abstract: The present invention provides techniques to more accurately control the process performance of treatments in which microelectronic substrates are treated by pressurized fluids that are sprayed onto the substrates in a vacuum process chamber. control strategies are used that adjust mass flow rate responsive to pressure readings in order to hold the pressure of a pressurized feed constant. In these embodiments, the mass flow rate will tend to vary in order to maintain pressure uniformity.

Abstract: The variability of immersion processes for treatment of semiconductor devices can be significantly lowered by initiating the termination of a treatment process according to a predetermined treatment termination protocol in a manner that takes into account the contribution of, in particular, the treatment that is carried out during the period of time in the treatment process in which the treatment process is being terminated. In a preferred embodiment, conditions that indicate the progress of the treatment on a real time basis are monitored, and the timing of the initiation of the termination process is additionally based on the calculated amount of treatment and treatment rate of the process in progress.

Abstract: Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime.

Abstract: Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes a reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime.