Abstract: A semiconductor memory apparatus includes a bank; a temperature sensor configured to generate a temperature voltage of which voltage level is changed according to a temperature variation of the bank; and a timing control block configured to control a timing of a signal to be inputted to the bank, according to the voltage level of the temperature voltage.

Abstract: A semiconductor memory apparatus includes a bank; a temperature sensor configured to generate a temperature voltage of which voltage level is changed according to a temperature variation of the bank; and a timing control block configured to control a timing of a signal to be inputted to the bank, according to the voltage level of the temperature voltage.

Abstract: A semiconductor memory apparatus includes a bank; a temperature sensor configured to generate a temperature voltage of which voltage level is changed according to a temperature variation of the bank; and a timing control block configured to control a timing of a signal to be inputted to the bank, according to the voltage level of the temperature voltage.

Abstract: A semiconductor memory apparatus includes a bank; a temperature sensor configured to generate a temperature voltage of which voltage level is changed according to a temperature variation of the bank; and a timing control block configured to control a timing of a signal to be inputted to the bank, according to the voltage level of the temperature voltage.

Abstract: An internal voltage generating circuit of a semiconductor memory apparatus includes a first voltage generating unit to output a first output voltage to a common node, the first output voltage is generated in response to a first reference voltage, and a second voltage generating unit to output a second output voltage to the common node, the second output voltage is generated in response to a second reference voltage.

Abstract: A voltage generating circuit of semiconductor integrated circuit includes: a voltage controller that detects the level of an external supply voltage and outputs a voltage control signal; a voltage supplier that outputs the external supply voltage or a first internal voltage in response to the voltage control signal; and a first reference voltage generator that is supplied with an output voltage of the voltage supplier and generates a first reference voltage.

Abstract: A semiconductor device includes a common probing pad; an internal voltage generation unit having a plurality of internal voltage generation blocks configured to generate a plurality of internal voltages; and a probing voltage selection unit configured to transfer an internal voltage selected from the internal voltages to the common probing pad in response to a plurality of voltage selection signals.

Abstract: A reference voltage supplying circuit can include an internal reference voltage generating unit configured to generate an internal reference voltage, a pad configured to receive an external reference voltage, a switching unit selectively configured to supply the internal reference voltage or the external reference voltage to an internal voltage generator in a test mode.

Abstract: An internal voltage generation circuit includes an internal reference voltage generation unit configured to generate first and second reference voltages, a core voltage generation unit configured to receive the first reference voltage and to generate a core voltage based on the first reference voltage, and a bit line pre-charge voltage generation unit configured to receive the second reference voltage and to generate a bit-line pre-charge voltage based on the second reference voltage.

Abstract: A semiconductor device includes: a first reference voltage generator for generating a first reference voltage; a first band gap circuit for dividing a voltage at a second reference voltage output node to produce a first and a second band gap voltages having a property relative to temperature variations; a first comparator for receiving the first reference voltage as a bias input and comparing the first band gap voltage with the second band gap voltage; and a first driver for pull-up driving the second reference voltage output node in response to an output signal of the first comparator.

Abstract: Herein, a voltage sensing circuit, which is capable of controlling a pumping voltage to be stably generated in a low voltage environment, is provided. The voltage sensing circuit includes a current mirror having first and second terminals, a first switching element configured to control current on the first terminal of the current mirror by a reference voltage, a second switching element configured to control current from the second terminal of the current mirror in response to a pumping voltage, and a third switching element configured to control current sources of the first and second switching elements to receive a negative voltage.

Abstract: A reference voltage selecting unit selectively outputs a first external reference voltage and a second external reference voltage as a selection reference voltage in accordance with whether to perform a wafer test. An address buffer generates an internal address by buffering an external address in accordance with the selection reference voltage. A command buffer generates an internal command by buffering an external command in accordance with the selection reference voltage. A data buffer generates internal data by buffering to an external data in accordance with the second external reference voltage.

Abstract: A voltage sensing circuit, which is capable of controlling a pumping voltage to be stably generated in a low voltage environment, is provided. The voltage sensing circuit includes a current mirror having first and second terminals, a first switching element configured to control current on the first terminal of the current mirror by a reference voltage, a second switching element configured to control current from the second terminal of the current mirror in response to a pumping voltage, and a third switching element configured to control current sources of the first and second switching elements to receive a negative voltage.

Abstract: A semiconductor memory device includes a voltage detector configured to detect a level of an external power supply voltage and an internal voltage generator configured to generate an internal voltage in response to an active signal and drive an internal voltage terminal with a driving ability corresponding to an output signal of the voltage detector. A method for operating the semiconductor memory device includes detecting a level of an external power supply voltage, based on a first target level, to output a detection signal; and generating an internal voltage in response to an active signal, and driving an internal voltage terminal with a driving ability corresponding to the detection signal.

Abstract: An internal voltage generation circuit includes an internal reference voltage generation unit configured to generate first and second reference voltages, a core voltage generation unit configured to receive the first reference voltage and to generate a core voltage based on the first reference voltage, and a bit line pre-charge voltage generation unit configured to receive the second reference voltage and to generate a bit-line pre-charge voltage based on the second reference voltage.

Abstract: A semiconductor memory device is provided which includes a voltage detecting unit configured to compare a target voltage level with a fed-back internal voltage to output a detection signal in a normal mode, a driving unit configured to selectively drive an internal voltage terminal to a first or second power supply voltage according to an operation mode in response to the detection signal, and an enable control unit configured to control the driving unit in response to a control signal corresponding to the operation mode.

Abstract: A reference voltage selecting unit selectively outputs a first external reference voltage and a second external reference voltage as a selection reference voltage in accordance with whether to perform a wafer test. An address buffer generates an internal address by buffering an external address in accordance with the selection reference voltage. A command buffer generates an internal command by buffering an external command in accordance with the selection reference voltage. A data buffer generates internal data by buffering to an external data in accordance with the second external reference voltage.

Abstract: A reference voltage supplying circuit can include an internal reference voltage generating unit configured to generate an internal reference voltage, a pad configured to receive an external reference voltage, a switching unit selectively configured to supply the internal reference voltage or the external reference voltage to an internal voltage generator in a test mode.

Abstract: A semiconductor memory device is provided which includes a voltage detecting unit configured to compare a target voltage level with a fed-back internal voltage to output a detection signal in a normal mode, a driving unit configured to selectively drive an internal voltage terminal to a first or second power supply voltage according to an operation mode in response to the detection signal, and an enable control unit configured to control the driving unit in response to a control signal corresponding to the operation mode.

Abstract: A reference voltage selecting unit selectively outputs a first external reference voltage and a second external reference voltage as a selection reference voltage in accordance with whether to perform a wafer test. An address buffer generates an internal address by buffering an external address in accordance with the selection reference voltage. A command buffer generates an internal command by buffering an external command in accordance with the selection reference voltage. A data buffer generates internal data by buffering an external data in accordance with the second external reference voltage.