Abstract: Pattern centric process control is disclosed. A layout of a semiconductor chip is decomposed into a plurality of intended circuit layout patterns. For the plurality of intended circuit layout patterns, a corresponding plurality of sets of fabrication risk assessments corresponding to respective ones of a plurality of sources is determined. Determining a set of fabrication risk assessments for an intended circuit layout pattern comprises determining fabrication risk assessments based at least in part on: simulation of the intended circuit layout pattern, statistical analysis of the intended circuit layout pattern, and evaluation of empirical data associated with a printed circuit layout pattern. A scoring formula is applied based at least in part on the sets of fabrication risk assessments to obtain a plurality of overall fabrication risk assessments for respective ones of the plurality of intended circuit layout patterns.

Abstract: Pattern centric process control is disclosed. A layout of a semiconductor chip is decomposed into a plurality of intended circuit layout patterns. For the plurality of intended circuit layout patterns, a corresponding plurality of sets of fabrication risk assessments corresponding to respective ones of a plurality of sources is determined. Determining a set of fabrication risk assessments for an intended circuit layout pattern comprises determining fabrication risk assessments based at least in part on: simulation of the intended circuit layout pattern, statistical analysis of the intended circuit layout pattern, and evaluation of empirical data associated with a printed circuit layout pattern. A scoring formula is applied based at least in part on the sets of fabrication risk assessments to obtain a plurality of overall fabrication risk assessments for respective ones of the plurality of intended circuit layout patterns.

Abstract: Pattern centric process control is disclosed. A layout of a semiconductor chip is decomposed into a plurality of intended circuit layout patterns. For the plurality of intended circuit layout patterns, a corresponding plurality of sets of fabrication risk assessments corresponding to respective ones of a plurality of sources is determined. Determining a set of fabrication risk assessments for an intended circuit layout pattern comprises determining fabrication risk assessments based at least in part on: simulation of the intended circuit layout pattern, statistical analysis of the intended circuit layout pattern, and evaluation of empirical data associated with a printed circuit layout pattern. A scoring formula is applied based at least in part on the sets of fabrication risk assessments to obtain a plurality of overall fabrication risk assessments for respective ones of the plurality of intended circuit layout patterns.

Abstract: Pattern centric process control is disclosed. A layout of a semiconductor chip is decomposed into a plurality of intended circuit layout patterns. For the plurality of intended circuit layout patterns, a corresponding plurality of sets of fabrication risk assessments corresponding to respective ones of a plurality of sources is determined. Determining a set of fabrication risk assessments for an intended circuit layout pattern comprises determining fabrication risk assessments based at least in part on: simulation of the intended circuit layout pattern, statistical analysis of the intended circuit layout pattern, and evaluation of empirical data associated with a printed circuit layout pattern. A scoring formula is applied based at least in part on the sets of fabrication risk assessments to obtain a plurality of overall fabrication risk assessments for respective ones of the plurality of intended circuit layout patterns.

Abstract: Pattern centric process control is disclosed. A layout of a semiconductor chip is decomposed into a plurality of intended circuit layout patterns. For the plurality of intended circuit layout patterns, a corresponding plurality of sets of fabrication risk assessments corresponding to respective ones of a plurality of sources is determined. Determining a set of fabrication risk assessments for an intended circuit layout pattern comprises determining fabrication risk assessments based at least in part on: simulation of the intended circuit layout pattern, statistical analysis of the intended circuit layout pattern, and evaluation of empirical data associated with a printed circuit layout pattern. A scoring formula is applied based at least in part on the sets of fabrication risk assessments to obtain a plurality of overall fabrication risk assessments for respective ones of the plurality of intended circuit layout patterns.

Abstract: Pattern centric process control is disclosed. A layout of a semiconductor chip is decomposed into a plurality of intended circuit layout patterns. For the plurality of intended circuit layout patterns, a corresponding plurality of sets of fabrication risk assessments corresponding to respective ones of a plurality of sources is determined. Determining a set of fabrication risk assessments for an intended circuit layout pattern comprises determining fabrication risk assessments based at least in part on: simulation of the intended circuit layout pattern, statistical analysis of the intended circuit layout pattern, and evaluation of empirical data associated with a printed circuit layout pattern. A scoring formula is applied based at least in part on the sets of fabrication risk assessments to obtain a plurality of overall fabrication risk assessments for respective ones of the plurality of intended circuit layout patterns.

Abstract: Tracking patterns during a semiconductor fabrication process includes: obtaining an image of a portion of a fabricated device; extracting contours of the portion of the fabricated device from the obtained image; aligning the extracted contour to a matching section of a reference design; decomposing the matching section of the reference design into one or more patterns; and updating a pattern tracking database with information pertaining to at least one pattern in the one or more patterns generated as a result of the decomposition.

Abstract: Tracking patterns during a semiconductor fabrication process includes: obtaining an image of a portion of a fabricated device; extracting contours of the portion of the fabricated device from the obtained image; aligning the extracted contour to a matching section of a reference design; decomposing the matching section of the reference design into one or more patterns; and updating a pattern tracking database with information pertaining to at least one pattern in the one or more patterns generated as a result of the decomposition.

Abstract: Tracking patterns during a semiconductor fabrication process includes: obtaining an image of a portion of a fabricated device; extracting contours of the portion of the fabricated device from the obtained image; aligning the extracted contour to a matching section of a reference design; decomposing the matching section of the reference design into one or more patterns; and updating a pattern tracking database with information pertaining to at least one pattern in the one or more patterns generated as a result of the decomposition.

Abstract: Tracking patterns during a semiconductor fabrication process includes: obtaining an image of a portion of a fabricated device; extracting contours of the portion of the fabricated device from the obtained image; aligning the extracted contour to a matching section of a reference design; decomposing the matching section of the reference design into one or more patterns; and updating a pattern tracking database with information pertaining to at least one pattern in the one or more patterns generated as a result of the decomposition.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Methods and systems for determining design coordinates for defects detected on a wafer are provided. One method includes aligning a design for a wafer to defect review tool images for defects detected in multiple swaths on the wafer by an inspection tool, determining a position of each of the defects in design coordinates based on results of the aligning, separately determining a defect position offset for each of the multiple swaths based on the swath in which each of the defects was detected (swath correction factor), the design coordinates for each of the defects, and a position for each of the defects determined by the inspection tool, and determining design coordinates for the other defects detected in the multiple swaths by the inspection tool by applying the appropriate swath correction factor to those defects.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: The present invention includes searching imagery data in order to identify one or more patterned regions on a semiconductor wafer, generating one or more virtual Fourier filter (VFF) working areas, acquiring an initial set of imagery data from the VFF working areas, defining VFF training blocks within the identified patterned regions of the VFF working areas utilizing the initial set of imagery data, wherein each VFF training block is defined to encompass a portion of the identified patterned region displaying a selected repeating pattern, calculating an initial spectrum for each VFF training block utilizing the initial set of imagery data from the VFF training blocks, and generating a VFF for each training block by identifying frequencies of the initial spectrum having maxima in the frequency domain, wherein the VFF is configured to null the magnitude of the initial spectrum at the frequencies identified to display spectral maxima.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Methods and systems for determining design coordinates for defects detected on a wafer are provided. One method includes aligning a design for a wafer to defect review tool images for defects detected in multiple swaths on the wafer by an inspection tool, determining a position of each of the defects in design coordinates based on results of the aligning, separately determining a defect position offset for each of the multiple swaths based on the swath in which each of the defects was detected (swath correction factor), the design coordinates for each of the defects, and a position for each of the defects determined by the inspection tool, and determining design coordinates for the other defects detected in the multiple swaths by the inspection tool by applying the appropriate swath correction factor to those defects.

Abstract: The present invention includes searching imagery data in order to identify one or more patterned regions on a semiconductor wafer, generating one or more virtual Fourier filter (VFF) working areas, acquiring an initial set of imagery data from the VFF working areas, defining VFF training blocks within the identified patterned regions of the VFF working areas utilizing the initial set of imagery data, wherein each VFF training block is defined to encompass a portion of the identified patterned region displaying a selected repeating pattern, calculating an initial spectrum for each VFF training block utilizing the initial set of imagery data from the VFF training blocks, and generating a VFF for each training block by identifying frequencies of the initial spectrum having maxima in the frequency domain, wherein the VFF is configured to null the magnitude of the initial spectrum at the frequencies identified to display spectral maxima.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.