Abstract: A system for connecting photovoltaic cells is disclosed. The system comprises a flexible component feeder source for feeding the photovoltaic cells to a process that couples them together; a vacuum conveyor for receiving at a first location the coupled photovoltaic cells and including openings through which a vacuum is applied to hold the coupled photovoltaic cells in place; a moving belt above the vacuum conveyor at a second location, where the vacuum conveyor and the moving belt are driven in a predetermined relation to one another for conveying the coupled photovoltaic cells from the first location to the second location; a vacuum source for applying a vacuum through the openings to cause the moving belt to apply a pressure to an upper surface of the coupled photovoltaic cells to compress the coupled photovoltaic cells; and a curing source at the second location for curing the compressed coupled photovoltaic cells.

Abstract: An example method for chemical vapor deposition (CVD) of thin films includes providing a deposition zone in a reaction chamber having a fixed showerhead assembly that introduces CVD reactive gases under positive pressure into the deposition zone. The example method also includes moving a substrate carrier beneath the showerhead assembly in the reaction chamber, the substrate carrier supports and transports at least one substrate within the reaction chamber so as to be subjected to a CVD process by the CVD reactive gases. The example method also includes providing a liner assembly shrouding the deposition zone and including at least one partial enclosure around the deposition zone isolating the deposition zone and the substrate carrier, whereby solid reaction byproducts are plated onto material in the liner assembly and gaseous reaction byproducts flow radially outward, the liner assembly being mounted on the substrate carrier for motion with the substrate carrier.

Abstract: Aspects of a system for holding workpieces in place during processing are described. In an example, the system includes a distribution manifold coupled to a vacuum source, and multiple linear valves coupled to the distribution manifold, where each linear valve has a manifold with multiple openings and is adjustable to select one or more of the multiple openings to have a path to the vacuum source through the distribution manifold for providing a vacuum to hold a workpiece in place. In another example, the system includes a vacuum holder having a first array of openings, a system of linear valves positioned below the vacuum holder and having a second array of openings that aligns with the first array of openings, and a vacuum source that provides vacuum for holding a workpiece on the vacuum holder. A method for holding workpieces in place during processing using these systems is also described.

Abstract: A method and system for connecting a plurality of materials using pressure and curing is disclosed. The method provides for: a) receiving the plurality of materials on the vacuum conveyor; b) conveying the received plurality of materials from the first location to a second location along the vacuum conveyor; c) applying a predetermined vacuum pressure; and d) curing the compressed plurality of materials. The system comprises a vacuum conveyor for receiving the plurality of materials at a first location, a moving belt adaptively positioned above the vacuum conveyor at a second location and the vacuum conveyor and the moving belt are arranged to be driven in a predetermined relation to one another, a vacuum pressure source for applying a predetermined vacuum pressure creating a force compressing the plurality of materials; and a curing source at a second location for curing the compressed plurality of materials.

Abstract: A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports.

Abstract: A showerhead for a semiconductor processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or a plurality of substrates or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

Abstract: A system for connecting photovoltaic cells is disclosed. The system comprises a flexible component feeder source for feeding the photovoltaic cells to a process that couples them together; a vacuum conveyor for receiving at a first location the coupled photovoltaic cells and including openings through which a vacuum is applied to hold the coupled photovoltaic cells in place; a moving belt above the vacuum conveyor at a second location, where the vacuum conveyor and the moving belt are driven in a predetermined relation to one another for conveying the coupled photovoltaic cells from the first location to the second location; a vacuum source for applying a vacuum through the openings to cause the moving belt to apply a pressure to an upper surface of the coupled photovoltaic cells to compress the coupled photovoltaic cells; and a curing source at the second location for curing the compressed coupled photovoltaic cells.

Abstract: A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports.

Abstract: A method for separation of semiconductor device cell units from fabricated large-area cell units, together with a corresponding tile unit structure, are provided in which the tile unit is cut along cell unit boundaries while leaving intact a set of specified tab sections distributed along the cell unit boundaries. The tile unit may be a multi-layer composite of a semiconductor layer with a conductive metallic base supported upon a polymer layer and adhered thereto by an adhesive film, wherein tab sections are cut completely through the semiconductor layer and its metallic base from above and may also be cut partially through the polymer layer from below, leaving at least a portion of the polymer layer in place at tab sections. Tile units can be handled such that component cell units are held together by the tab sections, until a physical final separation of selected cell units.

Abstract: A thermal bridge connecting first and second processing zones and a method for transferring a work piece from a first to a second processing zone by way of the thermal bridge are disclosed. A work piece, transportable from the first to the second processing zone on or above the thermal bridge, is maintained at a temperature between the temperatures of the processing zones. The thermal bridge member features a thermally conductive transport member for the work piece supported over an infrared transmissive member that is insulative to heat conduction and convection. The bridge insulative member extends between the first and second processing zones or between reactors. An infrared radiation beam source emits infrared radiation which passes through the bridge insulative member to the transport member, heating the member. In an alternate embodiment, the transport member may be heated directly. A liner member may be mounted above the bridge member to retain heat.

Abstract: Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.

Abstract: A lamp assembly for the lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, the bulb having an inner surface and an outer surface, a lamp base configured to receive the pair of leads and at least a portion of the bulb having a surface treatment adapted to reflect light away from the lamp base. In another embodiment, a sleeve covers the lamp base, which has a cross-sectional area less than about 1.2 times the cross-sectional area of the bulb.

Abstract: A flexible component feeder source for providing materials to an assembly process is disclosed. The flexible component feeder source comprises a flexible base suitable for protecting and receiving one or more photovoltaic cells for processing, wherein the flexible base is of a linear shape when opened and forms a roll when rolled.

Abstract: A method and system for connecting a plurality of materials using pressure and curing is disclosed. The method provides for: a) receiving the plurality of materials on the vacuum conveyor; b) conveying the received plurality of materials from the first location to a second location along the vacuum conveyor; c) applying a predetermined vacuum pressure; and d) curing the compressed plurality of materials. The system comprises a vacuum conveyor for receiving the plurality of materials at a first location, a moving belt adaptively positioned above the vacuum conveyor at a second location and the vacuum conveyor and the moving belt are arranged to be driven in a predetermined relation to one another, a vacuum pressure source for applying a predetermined vacuum pressure creating a force compressing the plurality of materials; and a curing source at a second location for curing the compressed plurality of materials.

Abstract: Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy.

Abstract: A method for separation of semiconductor device cell units from fabricated large-area cell units, together with a corresponding tile unit structure, are provided in which the tile unit is cut along cell unit boundaries while leaving intact a set of specified tab sections distributed along the cell unit boundaries. The tile unit may be a multi-layer composite of a semiconductor layer with a conductive metallic base supported upon a polymer layer and adhered thereto by an adhesive film, wherein tab sections are cut completely through the semiconductor layer and its metallic base from above and may also be cut partially through the polymer layer from below, leaving at least a portion of the polymer layer in place at tab sections. Tile units can be handled such that component cell units are held together by the tab sections, until a physical final separation of selected cell units.

Abstract: A showerhead for a semiconductor processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or a plurality of substrates or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

Abstract: A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls.

Abstract: In one embodiment, a substrate processing apparatus includes a chamber having an interior volume with an upper portion and a lower portion, a cooling source disposed in the upper portion of the interior volume, a heating source opposing the cooling source, a magnetically movable substrate support that moves between the upper portion and the lower the portion, and a plurality of sensors coupled to the chamber to detect the position of the substrate support relative to the heating source and the cooling source.