Abstract: A camera monitoring system and a method of controlling the same are provided. The camera monitoring system includes a camera assembly that captures an image of an outer side surface of a vehicle and a mirror assembly disposed to overlap at least a portion of the camera assembly. A driver performs deployment and folding of the camera assembly and the mirror assembly. A controller operates the driver in response to an input of the deployment or folding of the camera assembly and the mirror assembly and determines a failure of the camera assembly. The camera assembly and the mirror assembly are moved based on a single drive shaft, and the controller deploys or folds the camera assembly and the mirror assembly.

Abstract: A memory cell comprising a substrate, a bit line vertically oriented from the substrate along a first direction, a nanosheet transistor including at least one nanosheet horizontally oriented from the bit line along a second direction perpendicular to the first direction, and a capacitor horizontally oriented from the nanosheet transistor along the second direction.

Abstract: In an embodiment a washer system includes a plurality of measurement units configured to receive data required for vehicle driving, a nozzle configured to provide a washer fluid to the measurement units, a main reservoir configured to store the washer fluid, a sub-reservoir coupled to at least one of the measurement units and configured to be supplemented with the washer fluid from the main reservoir and a controller configured to determine a priority of the measurement units and supply, in response to the priority of the measurement units, the washer fluid from the main reservoir to the sub-reservoir based on the measurement unit having a higher priority.

Abstract: An air blowing apparatus is oriented toward a windshield glass of a vehicle and includes an air fan assembly located adjacent to the windshield glass and an air nozzle connected to the air fan assembly via a duct such that a fluid flows therebetween. The air nozzle is located so as to be opposite the windshield glass and is configured to adjust the pressure and angle at which air is discharged toward the windshield glass in accordance with the driving environment of a vehicle.

Abstract: A semiconductor device includes a core insulating layer extending in a first direction, an etch stop layer disposed on the core insulating layer, a channel layer extending along a sidewall of the core insulating layer and a sidewall of the etch stop layer, conductive patterns each surrounding the channel layer and stacked to be spaced apart from each other in the first direction, and an impurity region formed in an upper end of the channel layer.

Abstract: A semiconductor device includes a first stack structure including first interlayer insulating layers and first conductive patterns alternately stacked on each other in a first direction and a second conductive pattern comprising electrode portions and a connecting portion. The electrode portions of the second conductive pattern are stacked to be spaced apart from each other above the first stack structure. The connecting portion of the second conductive pattern extends in the first direction to intersect the electrode portions and couples the electrode portions. The semiconductor device further includes a vertical channel and a vertical conductive structure that pass through the first stack structure and the electrode portions of the second conductive pattern. The vertical conductive structure is spaced apart from the first stack structure and the second conductive pattern.

Abstract: A lighting apparatus of vehicles may include a light source unit of emitting light; a first reflection unit of reflecting light incident from the light source unit to discharge the reflected light outside the first reflection unit; a second reflection unit rotatably provided between the light source unit and the first reflection unit to reflect light for allowing light emitted by the light source unit to move to the first reflection unit or blocking the light such that the light is not moved to the first reflection unit and reflecting the light at a position different from the first reflection unit to discharge the light outside depending on a rotational position of the second reflection unit; and a driving unit connected to the second reflection unit and configured of adjusting the rotational position of the second reflection unit.

Abstract: A semiconductor memory device includes a first source layer, a second source layer on the first source layer, a stack structure over the second source layer, and a common source line penetrating the stack structure. The second source layer includes a protective layer in contact with the common source line and a conductive layer surrounding the protective layer.

Abstract: A semiconductor device includes a first stacked structure having first conductive layers and first insulating layers formed alternately with each other, first semiconductor patterns passing through the first stacked structure, a coupling pattern coupled to the first semiconductor patterns, and a slit passing through the first stacked structure and the coupling pattern.

Abstract: A semiconductor device includes a first stacked structure having first conductive layers and first insulating layers formed alternately with each other, first semiconductor patterns passing through the first stacked structure, a coupling pattern coupled to the first semiconductor patterns, and a slit passing through the first stacked structure and the coupling pattern.

Abstract: A semiconductor device includes a first stacked structure having first conductive layers and first insulating layers formed alternately with each other, first semiconductor patterns passing through the first stacked structure, a coupling pattern coupled to the first semiconductor patterns, and a slit passing through the first stacked structure and the coupling pattern.

Abstract: A method for manufacturing an electronic device includes forming a first source layer including a trench, forming a first sacrificial layer in the trench, forming a first structure over the first source layer, wherein the first structure includes first material layers and second material layers which are alternately stacked over the each other, forming first openings passing through the first structure and extending to the first sacrificial layer, forming first channel layers in the first openings, forming a slit passing through the first structure and extending to the first sacrificial layer, forming a second opening by removing the first sacrificial layer through the slit, and forming a second source layer in the second opening, wherein the second source layer is coupled to the first channel layers.

Abstract: A vehicle grille includes: a grille panel; a lens panel disposed at a rear side of the grille panel, formed in a same shape as some or entire area of the grille panel, and, when a light is incident, configured to allow some of the light to propagate in the lens panel and emit some of the light to an outside of the lens panel; and a housing disposed on a rear surface of the lens panel, formed in a same shape as the lens panel, and including a coupling provision hole configured to allow a front surface of the lens panel to be coupled to a rear surface of the grille panel at a rear side of the lens panel, wherein the rear surface of the lens panel and a front surface of the housing are coupled at the front side of the lens panel.

Abstract: A device for monitoring a liquid level of a liquid storage tank for a vehicle is capable of improving sensing sensitivity of a liquid level sensor by employing a structure capable of amplifying an electromotive force, which is generated by an electrode, at an electromotive force amplification layer including a carbon micro coil (CMC) and accurately sensing a frozen state of a liquid to perform a heating function so as to resolve the frozen state of the liquid.

Abstract: A semiconductor memory device includes a first source layer, a second source layer on the first source layer, a stack structure over the second source layer, and a common source line penetrating the stack structure. The second source layer includes a protective layer in contact with the common source line and a conductive layer surrounding the protective layer.

Abstract: A washer liquid heating device is provided. The device includes a heating unit that is positioned at a lower end of a reservoir. A washer pump is connected to one end of the heating unit and a controller adjusts a heat generation of the heating unit. Accordingly, at least some of washer liquid contained in the reservoir flows into the heating unit and is then discharged to the washer pump.

Abstract: A semiconductor device, and method of manufacturing a semiconductor device, includes second conductive patterns separated from each other above a first stack structure which is penetrated by first channel structures and enclosing second channel structures coupled to the first channel structures, respectively. Each of the second conductive patterns includes electrode portions stacked in a first direction and at least one connecting portion extending in the first direction to be coupled to the electrode portions.

Abstract: A washer fluid distribution device includes a plurality of nozzle units formed consecutively, a transfer conduit configured to pass through the plurality of nozzle units and having one end fluidly connected to an introduction part, the introduction part located at one end of the transfer conduit and configured to allow a washer fluid to be introduced from a washer pump, a plurality of discharge holes configured to correspond to the number of the nozzle units in the transfer conduit and having different angles based on a center of the transfer conduit, and a controller configured to control a rotation angle of the transfer conduit to allow the discharge holes to correspond to the nozzle units in response to a user’s request.

Abstract: The present technology includes a semiconductor memory device. The semiconductor memory device includes a first channel pattern and a second channel pattern each extending in a vertical direction and facing each other, a channel separation pattern formed between the first channel pattern and the second channel pattern and extending in the vertical direction, a stack including conductive patterns each surrounding the first channel pattern, the second channel pattern, and the channel separation pattern and stacked apart from each other in the vertical direction, a first memory pattern disposed between each of the conductive patterns and the first channel pattern, and a second memory pattern disposed between each of the conductive patterns and the second channel pattern.