Abstract: A phase change memory device includes a plurality of word lines, a plurality of lower electrodes, and a plurality of phase change material patterns. The plurality of word lines extend in a first direction and the plurality of word lines are arranged along a second direction perpendicular to the first direction. The lower electrodes are on the word lines and the lower electrodes are arranged in a direction diagonal to the first direction by a first angle. Each of the plurality of phase change material patterns are on a corresponding one of the plurality of lower electrodes.

Abstract: A phase change memory device includes a plurality of word lines, a plurality of lower electrodes, and a plurality of phase change material patterns. The plurality of word lines extend in a first direction and the plurality of word lines are arranged along a second direction perpendicular to the first direction. The lower electrodes are on the word lines and the lower electrodes are arranged in a direction diagonal to the first direction by a first angle. Each of the plurality of phase change material patterns are on a corresponding one of the plurality of lower electrodes.

Abstract: A memory device includes a substrate and a memory cell including a first electrode on the substrate, a phase-change material region on the first electrode and a second electrode on the phase-change material region opposite the first electrode. The memory device further includes a stress relief buffer adjacent a sidewall of the phase-change material region between the first and second electrodes. In some embodiments, the stress relief buffer includes a stress relief region contacting the sidewall of the phase-change material region. In further embodiments, the stress relief buffer includes a void adjacent the sidewall of the phase-change material region.