Abstract: Disclosed is an apparatus for measuring the distribution of radiation dose emitted from a brachytherapy insertion tool, the apparatus including a housing having defined therein a measurement space in which the brachytherapy insertion tool is located, a fluorescent member disposed at the housing, the fluorescent member being configured to react with radiation emitted to the measurement space and to emit light, a camera disposed in the housing, and a cover coupled to one surface of the housing, the cover being configured to cover the fluorescent member. The portion of the fluorescent member to which radiation from a radiation source of the brachytherapy insertion tool is applied reacts with the radiation and generates light, brightness of the light varies depending on distribution of the radiation, and the position at which the light is bright is calculated to measure the direction in which the brachytherapy insertion tool has no shielding.

Abstract: The present application relates to a decoration member including a substrate layer having a convex structure or a concave structure arranged two-dimensionally, and a method for preparing the decoration member.

Abstract: A semiconductor device includes; a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of spaced apart and vertically stacked semiconductor patterns, a source/drain pattern connected to the plurality of semiconductor patterns, a gate electrode on the plurality of semiconductor patterns, the gate electrode including a portion interposed between adjacent ones of the plurality of semiconductor patterns, and an inner spacer interposed between the portion of the gate electrode and the source/drain pattern, wherein the inner spacer is crystalline metal oxide is expressed by a formula (MO), wherein (O) is an oxygen atom, and (M) is a metal atom selected from a group consisting of Mg, Be, and Ga.

Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.

Abstract: An electrochromic device having a conductive layer having reflectiveness and light absorption characteristics simultaneously. The device is capable of realizing various esthetic senses, color senses or stereoscopic color patterns, and at the same time has excellent durability.

Abstract: A semiconductor device includes a substrate including an active pattern; a source/drain pattern on the active pattern; a gate electrode on the active pattern; and a gate spacer on the source/drain pattern. The source/drain pattern includes a first semiconductor layer on the active pattern and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes a first inner sidewall and second inner sidewall on the second semiconductor layer. A distance between the first and second inner sidewalls of the first semiconductor layer decreases according as positions of two portions of the first semiconductor layer where the distance is measured become closer to the gate spacer decreases.

Abstract: A semiconductor device comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a plurality of gate structures disposed on the lower pattern to be spaced apart from each other in a second direction, each of the gate structures including a gate electrode and gate insulating films, source/drain recesses defined between adjacent gate structures and a source/drain pattern filling the source/drain recesses. Each source/drain pattern may include a first semiconductor liner, which extend along sidewalls and a bottom surface of the source/drain recesses, second semiconductor liners, which are on the first semiconductor liners and extend along the sidewalls and the bottom surface of the source/drain recesses, and a filling semiconductor film, which is on the second semiconductor liners and fills the source/drain recess.

Abstract: An electrode has a current collector and an active material layer, which can provide an electrode capable of ensuring high levels of adhesion force between particles, and adhesion force between the active material layer and the current collector compared with a binder content in the active material layer. An electrochemical element and a secondary battery having the electrode are also provided.

Abstract: A decoration member for a cosmetic container including: a color expression layer having a light reflecting layer and a light absorbing layer provided on the light reflecting layer; and a substrate provided on one surface of the color expression layer.

Abstract: The present application relates to an electrode, a method for manufacturing the electrode, and a secondary battery comprising the electrode. The present application relates to an electrode comprising a current collector, an active material layer, and a thiophene polymer layer formed on the active material layer and can provide an electrode capable of ensuring a higher level of adhesion force between particles and adhesion force between the active material layer and the current collector relative to the binder content in the active material layer. In addition, the present application can provide a method for manufacturing the electrode, and a secondary battery comprising the same.

Abstract: A negative electrode having a carbon-based thin film formed on at least one surface of a lithium metal layer, and a lithium secondary battery including the same. A carbon-based thin film formed on at least one surface of a lithium metal layer blocks side reactions caused by direct contact between the lithium metal layer and an electrolyte as well as increasing a specific surface area of a negative electrode, and thereby suppresses lithium dendrite formation, and by obtaining current density distribution uniformly, enhances cycle performance, reduces an overvoltage to improve electrochemical performance of a lithium secondary battery.

Abstract: An electrode has a current collector and an active material layer, which can provide an electrode capable of ensuring high levels of adhesion force between particles, and adhesion force between the active material layer and the current collector compared with a binder content in the active material layer. An-electrochemical element and a secondary battery comprising the electrode are also provided.

Abstract: The present disclosure relates to a decoration element comprising a light reflective layer; and a light absorbing layer provided on the light reflective layer, wherein the light absorbing layer has surface resistance of 20 ohm/square or greater.

Abstract: The present application provides an electrode active material having excellent electrical conductivity and ionic conductivity as well as excellent mechanical flexibility by forming a unique conductive polymer layer on an active material core, while preventing side reactions between the active material core and an electrolyte from occurring, and an electrode comprising the same. Accordingly, it is possible to provide a lithium secondary battery having an excellent capacity retention ratio (lifetime characteristics) according to charging/discharging while having a high energy density. The conductive polymer layer includes a thiophene-based polymer having one or more functional groups selected from the group consisting of a carboxyl group, a hydroxyl group, an amine group, a nitro group, an ether group, a carbonyl group and a flowable functional group.

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

Abstract: A decoration element including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on a surface of the color developing layer. The substrate comprises a pattern layer, and the light absorbing layer comprises an aluminum oxynitride (AlaObNc).

Abstract: A display device includes: a substrate; a barrier layer on the substrate, and including: a trench area recessed in a direction towards the substrate; and a flat area surrounding the trench area, and having a flat upper surface; and a switching transistor and a driving transistor on the barrier layer. The switching transistor includes: a first active layer on the barrier layer, at least a portion of the first active layer being located at the trench area, the first active layer including a channel area, and a source area and a drain area at opposite sides of the channel area; a first gate electrode on the first active layer; and a first upper electrode and a second upper electrode on and connected to the first active layer.

Abstract: A method for preparing an electrochromic device. In the method the device is prepared by inserting monovalent cations into a reducing electrochromic layer in advance, for instance, through a dry process. In particular, the method involves inserting monovalent cations into an electrochromic layer which includes a reducing electrochromic material. Then, subsequently and sequentially, placing an electrolyte layer and an ion storage layer on the electrochromic layer. In this way, it is possible to improve driving durability of the electrochromic device.

Abstract: A decoration member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer. The substrate includes a pattern layer, and the light absorbing layer includes silicon (Si).

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.