Abstract: A semiconductor device includes at least two transistors and a charge-trapping structure. The charge-trapping structure traps charges, which are moved from a selected transistor toward a non-selected transistor, adjacent to the selected transistor among the transistors, thereby preventing a threshold voltage of the non-selected transistor from being increased. Thus, the charge-trapping structure traps the charges so that an increase of the threshold voltage of the non-selected voltage is suppressed.

Abstract: A semiconductor device includes at least two transistors and a charge-trapping structure. The charge-trapping structure traps charges, which are moved from a selected transistor toward a non-selected transistor, adjacent to the selected transistor among the transistors, thereby preventing a threshold voltage of the non-selected transistor from being increased. Thus, the charge-trapping structure traps the charges so that an increase of the threshold voltage of the non-selected voltage is suppressed.

Abstract: Mask ROM and method for fabricating the same, are disclosed, which is operative at a fast speed and a low voltage, including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, conductive layer patterns formed on the first insulating film, a first, and a second impurity regions formed in the semiconductor substrate on both sides of the conductive layer patterns, a second insulating film formed on the first insulating film inclusive of the conductive layer patterns, a contact hole formed in the second insulating film on the conductive layer patterns, a plug formed in each of the contact holes, and wordlines formed the second insulating film inclusive of the plugs.

Abstract: A method for fabricating a semiconductor device is disclosed, which reduces defects of a device by improving the process to improve the production yield.

Abstract: Nonvolatile memory and method for fabricating the same, which can prevent damages to a diffusion region between a selection transistor and a memory cell transistor and reduce a cell size, the nonvolatile memory including a semiconductor substrate having a selection transistor and a cell transistor defined thereon, a line form of a first selection gate line formed on the selection transistor region in one direction and a floating gate formed on the cell transistor region in a fixed pattern, an insulating film and a second gate line formed on the first selection gate line at fixed intervals, and an insulating film and a control gate line over the insulating film including the floating gate in a direction the same with the first gate line, impurity regions formed in one region in the semiconductor substrate on both sides of the control gate line and the first selection gate line, a first planar protection film having first contact holes one each to the first selection gate line and to the impurity region, a cont

Abstract: A method for fabricating a semiconductor device is disclosed, which reduces defects of a device by improving the process to improve the production yield.

Abstract: Mask ROM and method for fabricating the same, are disclosed, which is operative at a fast speed and a low voltage, including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, conductive layer patterns formed on the first insulating film, a first, and a second impurity regions formed in the semiconductor substrate on both sides of the conductive layer patterns, a second insulating film formed on the first insulating film inclusive of the conductive layer patterns, a contact hole formed in the second insulating film on the conductive layer patterns, a plug formed in each of the contact holes, and wordlines formed the second insulating film inclusive of the plugs.

Abstract: Mask ROM and method for fabricating the same, are disclosed, which is operative at a fast speed and a low voltage, including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, conductive layer patterns formed on the first insulating film, a first, and a second impurity regions formed in the semiconductor substrate on both sides of the conductive layer patterns, a second insulating film formed on the first insulating film inclusive of the conductive layer patterns, a contact hole formed in the second insulating film on the conductive layer patterns, a plug formed in each of the contact holes, and wordlines formed the second insulating film inclusive of the plugs.

Abstract: Nonvolatile memory and method for fabricating the same, which can prevent damages to a diffusion region between a selection transistor and a memory cell transistor and reduce a cell size, the nonvolatile memory including a semiconductor substrate having a selection transistor and a cell transistor defined thereon, a line form of a first selection gate line formed on the selection transistor region in one direction and a floating gate formed on the cell transistor region in a fixed pattern, an insulating film and a second gate line formed on the first selection gate line at fixed intervals, and an insulating film and a control gate line over the insulating film including the floating gate in a direction the same with the first gate line, impurity regions formed in one region in the semiconductor substrate on both sides of the control gate line and the first selection gate line, a first planar protection film having first contact holes one each to the first selection gate line and to the impurity region, a cont

Abstract: Nonvolatile memory and method for fabricating the same, which can prevent damages to a diffusion region between a selection transistor and a memory cell transistor and reduce a cell size, the nonvolatile memory including a semiconductor substrate having a selection transistor and a cell transistor defined thereon, a line form of a first selection gate line formed on the selection transistor region in one direction and a floating gate formed on the cell transistor region in a fixed pattern, an insulating film and a second gate line formed on the first selection gate line at fixed intervals, and an insulating film and a control gate line over the insulating film including the floating gate in a direction the same with the first gate line, impurity regions formed in one region in the semiconductor substrate on both sides of the control gate line and the first selection gate line, a first planar protection film having first contact holes one each to the first selection gate line and to the impurity region, a cont

Abstract: A method of fabricating a mask ROM that includes forming a plurality of buried bitlines in an upper surface of a semiconductor substrate at fixed intervals and a plurality of wordlines on the semiconductor substrate perpendicular to the buried bitlines; forming an interlayer insulating film having a bitline contact hole on an entire first surface of the semiconductor substrate inclusive of the wordlines; forming a metal pattern in contact with the buried bitlines through the contact hole; forming a ROM code mask on the metal pattern; forming a plurality of ROM code ion implantation regions by selectively etching the interlayer insulating film with the ROM code mask; and forming a protection film on an entire second surface of the semiconductor substrate by implanting ROM code ions in the ROM code ion implantation regions.

Abstract: A method of fabricating a mask ROM includes forming a trench on a first conductivity type semiconductor substrate, implanting a second conductivity type impurity ion in at least a surface portion of the semiconductor substrate where the trench is formed, forming an insulating oxide layer on a surface of the semiconductor substrate, including a surface of the trench, forming gate oxide layers of both sides of the trench, forming first and second gates on the gate, oxide layers and forming a first conductivity type channel by implanting a first conductivity type impurity ion in one side of the trench. As such, the resulting mask ROM includes two transistors on either side of a trench having channels along the side walls of the trench. The resulting mask ROM has a reduced surface width, enhancing integration.

Abstract: A method of fabricating a mask ROM includes forming a trench on a first conductivity type semiconductor substrate, implanting a second conductivity type impurity ion in at least a surface portion of the semiconductor substrate where the trench is formed, forming an insulating oxide layer on a surface of the semiconductor substrate, including a surface of the trench, forming gate oxide layers of both sides of the trench, forming first and second gates on the gate oxide layers and forming a first conductivity type channel by implanting a first conductivity type impurity ion in one side of the trench. As such, the resulting mask ROM includes two transistors on either side of a trench having channels along the side walls of the trench. The resulting mask ROM has a reduced surface width, enhancing integration.