Abstract: A method for fabricating a semiconductor device includes: forming an MTJ element and an electrode layer pattern over a substrate; forming a protective layer to protect the MTJ element and the electrode layer pattern; forming at least one insulation layer over the protective layer; forming a first hole by selectively removing the at least one insulation layer; forming an overhang pattern protruding from the sidewall of the first hole; forming a second hole exposing the electrode layer pattern by selectively removing the at least one insulation layer exposed at the bottom of the first hole by using the overhang pattern as a mask; and forming a conductive layer pattern to be electrically coupled to the electrode layer pattern exposed through the second hole.