Abstract: A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF (aq) or NH4F (g) generated via NH3+NH or NF3 with H2 or H2O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.

Abstract: A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF (aq) or NH4F (g) generated via NH3+NH or NF3 with H2 or H2O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.

Abstract: A method for in-situ dry cleaning of a SiGe semiconductor surface doses the SiGe surface with ex-situ wet HF in a clean ambient environment or in-situ dosing with gaseous NH4F to remove oxygen containing contaminants. Dosing the SiGe surface with atomic H removes carbon containing contaminants. Low temperature annealing pulls the surface flat. Passivating the SiGe semiconductor surface with H2O2 vapor for a sufficient time and concentration forms an a oxygen monolayer(s) of —OH sites on the SiGe. Second annealing the SiGe semiconductor surface is conducted at a temperature below that which would induce dopant diffusion. A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF(aq) or NH4F(g) generated via NH3+NH or NF3 with H2 or H2O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.

Abstract: A method for in-situ dry cleaning of a Ge containing semiconductor surface, other than SiGe. The method is conducted in a vacuum chamber. An oxygen monolayer(s) is formed and promotes removal of essentially all carbon from the surface, and serves to both clean and functionalize the surface. The Ge semiconductor surface is then annealed at a temperature below that which would induce dopant diffusion.

Abstract: A method for in-situ dry cleaning of a Ge containing semiconductor surface, other than SiGe. The method is conducted in a vacuum chamber. An oxygen monolayer(s) is formed and promotes removal of essentially all carbon from the surface, and serves to both clean and functionalize the surface. The Ge semiconductor surface is then annealed at a temperature below that which would induce dopant diffusion.

Abstract: A method for in-situ dry cleaning of a SiGe semiconductor surface doses the SiGe surface with ex-situ wet HF in a clean ambient environment or in-situ dosing with gaseous NH4F to remove oxygen containing contaminants. Dosing the SiGe surface with atomic H removes carbon containing contaminants. Low temperature annealing pulls the surface flat. Passivating the SiGe semiconductor surface with H2O2 vapor for a sufficient time and concentration forms an a oxygen monolayer(s) of —OH sites on the SiGe. Second annealing the SiGe semiconductor surface is conducted at a temperature below that which would induce dopant diffusion. A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF(aq) or NH4F(g) generated via NH3+NH or NF3 with H2 or H2O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.