Patents by Inventor Kikurou Takemoto
Kikurou Takemoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7843040Abstract: A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFe from a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source (17), and second substance gas GGa containing elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).Type: GrantFiled: December 2, 2008Date of Patent: November 30, 2010Assignee: Sumitomo Electric Industries, Ltd.Inventors: Akinori Koukitu, Yoshinao Kumagai, Yoshiki Miura, Kikurou Takemoto, Fumitaka Sato
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Patent number: 7518216Abstract: A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11. Next, gaseous iron compound GFe from a source 13 for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source 15 are caused to react with each other in a mixing container 16 to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source 17, and second substance gas GGa containing elemental gallium are supplied to a reaction tube 21 to form iron-doped gallium nitride 23 on the substrate 1.Type: GrantFiled: March 20, 2006Date of Patent: April 14, 2009Assignee: Sumitomo Electric Industries, Ltd.Inventors: Akinori Koukitu, Yoshinao Kumagai, Yoshiki Miura, Kikurou Takemoto, Fumitaka Sato
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Publication number: 20090079036Abstract: A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFe from a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source (17), and second substance gas GGa containing elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).Type: ApplicationFiled: December 2, 2008Publication date: March 26, 2009Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Akinori Koukitu, Yoshinao Kumagai, Yoshiki Miura, Kikurou Takemoto, Fumitaka Sato
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Publication number: 20070292612Abstract: A metal-organic vaporizing and feeding apparatus includes: a retention vessel for retaining a metal-organic material; a bubbling gas feeding path connected to the retention vessel, for feeding bubbling gas to the metal-organic material; a metal-organic gas feeding path connected to the retention vessel, for feeding metal-organic gas generated in the retention vessel and dilution gas to a deposition chamber; a dilution gas feeding path connected to the metal-organic gas feeding path, for feeding the dilution gas to the metal-organic gas feeding path; a flow rate regulator provided in the bubbling gas feeding path, for regulating flow rate of the bubbling gas; a pressure regulator for regulating pressure of the dilution gas; and a sonic nozzle disposed in the metal-organic gas feeding path on a downstream side of a connecting position between the metal-organic gas feeding path and the dilution gas feeding path.Type: ApplicationFiled: June 14, 2007Publication date: December 20, 2007Inventors: Masaki Ueno, Toshio Ueda, Takao Nakamura, Koichi Ishikawa, Ken Takahashi, Osamu Yasaku, Kazuo Ujiie, Kikurou Takemoto
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Publication number: 20070215982Abstract: A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11. Next, gaseous iron compound GFe from a source 13 for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source 15 are caused to react with each other in a mixing container 16 to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source 17, and second substance gas GGa containing elemental gallium are supplied to a reaction tube 21 to form iron-doped gallium nitride 23 on the substrate 1.Type: ApplicationFiled: March 20, 2006Publication date: September 20, 2007Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Akinori Koukitu, Yoshinao Kumagai, Yoshiki Miura, Kikurou Takemoto, Fumitaka Sato
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Publication number: 20070128359Abstract: There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.Type: ApplicationFiled: February 13, 2007Publication date: June 7, 2007Applicants: Japan Pionics Co., Ltd, Sumitomo Electric Industires, Ltd.Inventors: Kenji OTSUKA, Naoki Muranaga, Kikurou Takemoto
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Patent number: 7195022Abstract: There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.Type: GrantFiled: March 16, 2005Date of Patent: March 27, 2007Assignees: Japan Pionics Co., Ltd., Sumitomo Electric Industries Ltd.Inventors: Kenji Otsuka, Naoki Muranaga, Kikurou Takemoto
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Publication number: 20050163928Abstract: There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.Type: ApplicationFiled: March 16, 2005Publication date: July 28, 2005Applicants: Japan Pionics Co., Ltd, Sumitomo Electric Industries, Ltd.Inventors: Kenji Otsuka, Naoki Muranaga, Kikurou Takemoto
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Publication number: 20020136671Abstract: There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.Type: ApplicationFiled: December 20, 2001Publication date: September 26, 2002Applicant: Japan Pionics Co., LtdInventors: Kenji Otsuka, Naoki Muranaga, Kikurou Takemoto
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Patent number: 6387722Abstract: The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 &mgr;m or more and a method for preparing it.Type: GrantFiled: May 26, 2000Date of Patent: May 14, 2002Assignee: Sumitomo Electric Industries, LTDInventors: Kensaku Motoki, Masato Matsushima, Katsushi Akita, Mitsuru Shimazu, Kikurou Takemoto, Hisashi Seki, Akinori Koukitu
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Patent number: 6270587Abstract: The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 &mgr;m or more and a method for preparing it.Type: GrantFiled: March 12, 1998Date of Patent: August 7, 2001Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kensaku Motoki, Masato Matsushima, Katsushi Akita, Mitsuru Shimazu, Kikurou Takemoto, Hisashi Seki, Akinori Koukitu
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Patent number: 5843590Abstract: A high performance epitaxial wafer which is useful, for example in a light emitting device is produced with a buffer layer. The epitaxial wafer has a substrate of a compound semiconductor selected from a group consisting of GaAs, GaP, InAs and InP. The buffer layer of GaN is grown on the substrate to a thickness within the range of 10 nm to 80 nm. An epitaxial layer of GaN is formed on the buffer layer. The buffer layer is grown at a first temperature by organic metal chloride vapor phase epitaxy, while the epitaxial layer is grown at a second temperature, which is higher than the first temperature, by the organic metal chloride vapor phase epitaxy.Type: GrantFiled: December 19, 1995Date of Patent: December 1, 1998Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yoshiki Miura, Keiichiro Fujita, Kikurou Takemoto, Masato Matsushima, Hideki Matsubara, Shigenori Takagishi, Hisashi Seki, Akinori Koukitu