Patents by Inventor Kim Bosang

Kim Bosang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned, silicided, trench-based DRAM/eDRAM processes with improved retention
    Patent number: 7564086
    Abstract: A DRAM cell in a substrate has a deep trench (DT) extending from a surface of the substrate into the substrate, a word line (WL) formed on the surface of the substrate adjacent the deep trench, and oxide (TTO) disposed in a top portion of the trench and extending beyond the trench in the direction of the word line. In this manner, when silicided, there is oxide rather than silicon on the surface of the substrate in a gap between the word line (WL) and a passing word line (PWL) disposed above the deep trench.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: July 21, 2009
    Assignee: International Business Machines Corporation
    Inventors: Oh-Jung Kwon, Kim Bosang, Herbert Lei Ho, Ali Babar Khan, Deok-kee Kim
  • SELF-ALIGNED, SILICIDED, TRENCH-BASED DRAM/eDRAM PROCESSES WITH IMPROVED RETENTION
    Publication number: 20070235792
    Abstract: A DRAM cell in a substrate has a deep trench (DT) extending from a surface of the substrate into the substrate, a word line (WL) formed on the surface of the substrate adjacent the deep trench, and oxide (TTO) disposed in a top portion of the trench and extending beyond the trench in the direction of the word line. In this manner, when silicided, there is oxide rather than silicon on the surface of the substrate in a gap between the word line (WL) and a passing word line (PWL) disposed above the deep trench.
    Type: Application
    Filed: December 4, 2006
    Publication date: October 11, 2007
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Oh-Jung Kwon, Kim Bosang, Herbert Ho, Babar Khan, Deok-kee Kim
  • Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retention
    Patent number: 7153737
    Abstract: A DRAM cell in a substrate has a deep trench (DT) extending from a surface of the substrate into the substrate, a word line (WL) formed on the surface of the substrate adjacent the deep trench, and oxide (TTO) disposed in a top portion of the trench and extending beyond the trench in the direction of the word line. In this manner, when silicided, there is oxide rather than silicon on the surface of the substrate in a gap between the word line (WL) and a passing word line (PWL) disposed above the deep trench.
    Type: Grant
    Filed: January 17, 2005
    Date of Patent: December 26, 2006
    Assignee: International Business Machines Corporation
    Inventors: Oh-Jung Kwon, Kim Bosang, Herbert Lei Ho, Babar Ali Khan, Deok-kee Kim
  • SELF-ALIGNED, SILICIDED, TRENCH-BASED, DRAM/EDRAM PROCESSES WITH IMPROVED RETENTION
    Publication number: 20060160298
    Abstract: A DRAM cell in a substrate has a deep trench (DT) extending from a surface of the substrate into the substrate, a word line (WL) formed on the surface of the substrate adjacent the deep trench, and oxide (TTO) disposed in a top portion of the trench and extending beyond the trench in the direction of the word line. In this manner, when silicided, there is oxide rather than silicon on the surface of the substrate in a gap between the word line (WL) and a passing word line (PWL) disposed above the deep trench.
    Type: Application
    Filed: January 17, 2005
    Publication date: July 20, 2006
    Applicant: INTERANTIONAL BUSINESS MACHINES CORPORATION
    Inventors: Oh-Jung Kwon, Kim Bosang, Herbert Ho, Babar Khan, Deok-kee Kim