Abstract: A basic developer/quencher solution formulated to include at least one supercritical fluid or liquid solvent and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The supercritical fluid or liquid solvent may be carbon dioxide and the base may be quaternary ammonium salt that has side groups that increase the solubility of the quaternary ammonium salt in carbon dioxide.

Abstract: A method of forming a semiconductor device. The method comprises forming a conductive layer on a substrate, forming a porous dielectric layer on the conductive layer, and forming a first etched region by removing a first portion of the porous dielectric layer. The first etched region is then filled with a sacrificial light absorbing material. A layer of photoresist is then patterned to define a second region to be etched. A second region is then etched by removing part of the sacrificial light absorbing material and a second portion of the porous dielectric layer. The layer of photoresist is then removed. The remaining portions of the sacrificial light absorbing material is then removed selectively using an anhydrous solvent comprising fluoride and a solvent having molecules with at least one —OH group and three to six carbons, wherein the sacrificial light absorbing material is selectively removed over the porous dielectric layer.

Abstract: A basic developer/quencher solution formulated to include at least one supercritical fluid or liquid solvent and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The supercritical fluid or liquid solvent may be carbon dioxide and the base may be quaternary ammonium salt that has side groups that increase the solubility of the quaternary ammonium salt in carbon dioxide.

Abstract: A basic supercritical solution formulated to include at least one supercritical fluid and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The base may be the supercritical fluid in the basic supercritical solution. A super critical fluid is a state of matter above the critical temperature and pressure (Tc and Pc). A basic supercritical solution formulated to include at least one supercritical fluid has a low viscosity and surface tension and is capable of penetrating narrow features having high aspect ratios and the photoresist material due to the gas-like nature of the supercritical fluid.