Abstract: A memory device may include a reference voltage generator that generates a reference voltage, a voltage regulator that includes a plurality of driving blocks generating an internal voltage based on the reference voltage, and a power line that receives the internal voltage. At least one of the plurality of driving blocks may include a first unit driver that generates a first output current flowing through the power line based on the reference voltage and a change in the internal voltage, and a second unit driver that generates a second output current larger than the first output current flowing through the power line, based on the reference voltage and the change in the internal voltage. The first unit driver may generate the first output current faster than the second output current of the second unit driver.

Abstract: The sintered body including silicon oxide and carbon, wherein the sintered body has a D band peak at a wave number of 1,311 cm?1 to 1,371 cm?1 and a G band peak at a wave number of 1,572 cm?1 to 1,632 cm?1 in a Raman spectrum, and wherein the D band peak or the G band peak have a higher intensity than a fifth peak present at a wave number of 1,027 cm?1 to 1,087 cm?1 in the Raman spectrum, is disclosed.

Abstract: It is related to a positive active material for lithium secondary battery, a manufacturing method thereof, and a lithium secondary battery containing the same, provides that a positive active material for lithium secondary battery, wherein, it is a layered lithium metal compound comprises nickel, cobalt, and manganese, and aluminum, zirconium, and boron are doped.

Abstract: A method of learning a parameter of a sensor filter and an apparatus for performing the method are provided. The learning method may include performing a simulation on a target image for each spectrum of a sensor filter, obtaining an output value by inputting the simulated image to a vision model for a vision task, and learning a parameter of the sensor filter based on a loss between a label of the vision model and the output value of the vision model.

Abstract: Provided is a rubber socket having a structure with a built-in component. In the rubber socket with a built-in component, a connection sheet having components attached to an upper surface, a lower surface, or upper and lower surfaces of a conductive sheet composed of a conductive part and an insulating part is detachably coupled to the upper surface, the lower surface, or the upper and lower surfaces, and a guide sheet made of an inelastic insulating material is attached to an upper side, a lower side, or upper and lower sides of the connection sheet, and characteristics of a tester or a device to be tested may be tested using the components.

Abstract: An optimization method includes determining first information related to a difference between the color filter spectrum and the color spectrum or a difference between an image transformed by the color transformation matrix and a ground truth (GT) image in the reset color space, determining second information representing smoothness of the color filter spectrum, third information representing a transmittance of the color filter spectrum, calculating a cost value based on the first information, the second information, and the third information, compare the calculated cost value and a threshold, and updating one of the filter spectrum information and the color transformation matrix in response to the calculated cost value being equal to or greater than the threshold.

Abstract: A molding method for a cover window includes: locally heating a peripheral portion of a glass substrate around a central portion of the glass substrate to a temperature of about 610° C. to about 670° C., forming a cover window by pressing the glass substrate, and annealing and cooling the cover window. Accordingly, a cover window in which each of edges has an outwardly convex curved surface through a glass substrate may be formed. In addition, the surface roughness of a cover window formed through a glass substrate may be improved.

Abstract: Provided is a method of preparing a superabsorbent polymer. More specifically, provided is a method of preparing a superabsorbent polymer capable of exhibiting improved initial absorbency and a rapid absorption rate by polymerizing monomers having acidic groups, of which part is neutralized with a basic material including potassium hydroxide, in the presence of an encapsulated foaming agent.

Abstract: A method to detect, identify and determine the position of laser points from infrared laser emitters in a firearm training simulation system. The method consists of two steps. This first step combines some common tools such as a camera with a filter switcher and edge and corner detecting algorithms in image processing to provide a fast automatic screen calibrating method. The second step is to detect laser point objects in each frame continuously captured by the camera, and then further process these objects to identify laser shots, filter out noisy objects, and eventually detect simulated shots from different laser emitters and determine the final mapped position of the shot.

Abstract: In one embodiment, a telecommunication apparatus includes a processor to generate a telephone call set-up message including a user-to-user information (UUI) field, and include a security token in the UUI field of the telephone call set-up message, and a network interface to send the telephone call set-up message to a telephone network. Related apparatus and methods are also described.

Abstract: In one embodiment, a telecommunication apparatus includes a processor to generate a telephone call set-up message including a user-to-user information (UUI) field, and include a security token in the UUI field of the telephone call set-up message, and a network interface to send the telephone call set-up message to a telephone network. Related apparatus and methods are also described.

Abstract: Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma.

Abstract: Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma.

Abstract: A one transistor DRAM device includes: a substrate with an insulating layer, a first semiconductor layer provided on the insulating layer and including a first source region and a first region which are in contact with the insulating layer and a first floating body between the first source region and the first drain region, a first gate pattern to cover the first floating body, a first interlayer dielectric to cover the first gate pattern, a second semiconductor layer provided on the first interlayer dielectric and including a second source region and a second drain region which are in contact with the first interlayer dielectric and a second floating body between the second source region and the second drain region, and a second gate pattern to cover the second floating body.