Abstract: A copper alloy for an electronic device comprises 2.0 wt% -8 wt% of Ni, 0.1 wt% -0.8 wt% of P, 0.06 wt% -1 wt% of Si and the rest being Cu and unavoidable impurities.The rest may include 0.03 wt% -2.0 wt% of Zn. The copper allow has an oxygen content of 20 ppm or less.

Abstract: A method for manufacturing a shadow mask is used for color television picture tubes and the like. The surface of a shadow mask body, made of Fe-Ni type alloy, is ion-nitriding processed so as to make the most of the low thermal expansion property inherent in the alloy. The result is that the color purity degradation caused by the thermal expansion at temperature increases of the mask, and by the resonance of the mask itself, can be prevented, thereby realizing a shadow mask serving to render a highly refined CRT.

Abstract: An improved method for producing a copper alloy, wherein a molten metal consisting essentially of 1.0 to 8% by weight of Ni, 0.1 to 0.8% by weight of P, 0.06 to 1.0% by weight of Si, and a remainder of Cu and unavoidable impurities (or a molten metal consisting essentially of 1.0 to 8% by weight of Ni, 0.1 to 0.8% by weight of P, 0.06 to 1.0% by weight of Si, 0.03 to 0.5% by weight of Zn, and a remainder of Cu and unavoidable impurities) is quenched to solidify, at a cooling rate in the range from 10.sup.2 .degree. C./sec. to 10.sup.5 .degree. C./sec., and continuously cooling in succession said solidified metal to a normal temperature, to cause an intermetallic compound of Ni-P and Ni-Si to be finely and uniformly dispersed into the matrix material.

Abstract: A Cu-Ni-Sn alloy with excellent fatigue properties comprising 6 to 25 wt % of Ni, 4 to 9 wt % of Sn, 0.04 to 5 wt % in total of at least one element selected from the following elements:Zn . . . 0.03-4 wt %, Zr . . . 0.01-0.2 wt %,Mn . . . 0.03-1.5 wt %, Fe . . . 0.03-0.7 wt %,Mg . . . 0.03-0.5 wt %, P . . . 0.01-0.5 wt %,Ti . . . 0.03-0.7 wt %, B . . . 0.001-0.1 wt %,Cr . . . 0.03-0.7 wt %, Co . . . 0.01-0.5 wt %,and the rest being substantially Cu, and subjected, before final finish working, to heat treatment for structure arrangement at a temperature of 500.degree. to 770.degree. C., then to finish working of at most 50%, followed by age treatment at a temperature of 350.degree. to 500.degree. C. for 3 to 300 minutes.

Abstract: A copper alloy for an electronic device comprises 1.0 wt %-4.0 wt % of Ni, more than 0.2 wt % and less than 0.8 wt % of P, 0.5 wt %-6.0 wt % of Zn and the rest being copper and unavoidable impurities. The rest may include 0.05 wt %-1.0 wt % of Mg.A wire of the above-mentioned copper alloy is prepared by heating the copper alloy having the composition described above at temperature of 750.degree. C.-950.degree. C. for more than one minute before the final rolling operation, and then, heating the material at a temperature of 350.degree. C.-500.degree. C., or slowly cooling it at a rate of 4.degree. C./min. or less, or cooling it at a rate of 1.degree. C./min. or more until temperature reaches 500.degree. C. and keeping its temperature for at least one hour in a temperature range of 500.degree. C.-350.degree. C.