Abstract: The object of the present invention is to provide a film thickness distribution analysis method that ensures quick and effective prediction of film thickness distribution by computer simulation in the pattern plating process. On the circuit pattern of a printed circuit board, in the method for analyzing the thickness distribution of metal film plated selectively, hypothetically dividing the printed circuit board into one or more regions, introducing pattern density ?j=Aj/Sj (Sj: the area Sj of a desired region j, and Aj: the area of the plated surface inside the area j), and calculating the approximate average current density or film thickness distribution based on “approximation averaged by pattern density”.

Abstract: The measurement throughput and the precision in sample identification are improved in a tandem type mass spectrograph. Thus, in a mass spectrum analyzing system utilizing a tandem type mass spectrograph in which the selection of an ionic species to serve as the measurement target, dissociation thereof and spectral measurement are repeated in n stages, the ionic species to be measured in MSn is selected based on the mass-to-charge ratios (m/z values) obtained as a result of the spectral analysis in MSn?1 (n?2), and this procedure is repeated until the sequence of a required number of amino acids is determined.

Abstract: A system for analyzing mass spectrometric data is provided, which has an data input means for entering mass spectrometric data of a parent ion and dissociated ions resulting from multiple dissociation of the parent ion, and an analytical means for providing characteristics of a candidate for estimated structure of a precursor ion that is representative of pre-dissociation structure at each stage of dissociation. The system analyzes one of the structure of precursor ion at each stage of dissociation and the structure of parent ion based on the characteristics and spectrometric data.

Abstract: A main object is to cope with an unknown structure substance thereby to identify the structure of a parent ion highly precisely and to derive a supposed structure. A method for analyzing mass spectrometric data is disclosed, which: acquires mass spectrometric data on an ionized sample and dissociated ions dissociated from the sample as a parent ion; derives dissociated ion candidates by analyzing the molecular orbits on the candidates of the structures of the parent ion; and displays the analytical results of the parent ion candidates and the dissociated ion candidates and compares the data of the dissociated ion candidates and the data of dissociated ions actually measured, to evaluate the structures of the parent ion candidates.

Abstract: A main object is to cope with an unknown structure substance thereby to identify the structure of a parent ion highly precisely and to derive a supposed structure. A method for analyzing mass spectrometric data is disclosed, which: acquires mass spectrometric data on an ionized sample and dissociated ions dissociated from the sample as a parent ion; derives dissociated ion candidates by analyzing the molecular orbits on the candidates of the structures of the parent ion; and displays the analytical results of the parent ion candidates and the dissociated ion candidates and compares the data of the dissociated ion candidates and the data of dissociated ions actually measured, to evaluate the structures of the parent ion candidates.

Abstract: During the structural analysis of a protein or peptide by tandem mass spectroscopy, a peptide ion derived from a protein that has already been measured and that is expressed in great quantities is avoided as a tandem mass spectroscopy target. A peptide derived from a minute amount of protein, which has heretofore been difficult to analyze, can be automatically determined as a tandem mass spectroscopy target within the real time of measurement. Data concerning a protein that has already been measured and a peptide derived from the protein is automatically stored in an internal database. The stored data is collated with measured data with high accuracy to determine an isotope peak. In this way, the process of selecting a peptide peak that has not been measured as the target for the next tandem analysis can be performed within the real time of measurement and a redundant measurement of peptides derived from the same protein can be avoided.

Abstract: This invention provides an inspection method and device which can efficiently measure the surface uniformity of a semiconductor device which is chemically and mechanically polished based on measured data at several points on the surface of the chip.

Abstract: A system for analyzing mass spectrometric data is provided, which has an data input means for entering mass spectrometric data of a parent ion and dissociated ions resulting from multiple dissociation of the parent ion, and an analytical means for providing characteristics of a candidate for estimated structure of a precursor ion that is representative of pre-dissociation structure at each stage of dissociation. The system analyzes one of the structure of precursor ion at each stage of dissociation and the structure of parent ion based on the characteristics and spectrometric data.

Abstract: The measurement throughput and the precision in sample identification are improved in a tandem type mass spectrograph. Thus, in a mass spectrum analyzing system utilizing a tandem type mass spectrograph in which the selection of an ionic species to serve as the measurement target, dissociation thereof and spectral measurement are repeated in n stages, the ionic species to be measured in MSn is selected based on the mass-to-charge ratios (m/z values) obtained as a result of the spectral analysis in MSn−1 (n≧2), and this procedure is repeated until the sequence of a required number of amino acids is determined.

Abstract: An apparatus for analyzing mass spectrometric data is provided, which has a feature that the apparatus includes the following means. They are namely a first input means for entering first data of an ion measured by mass spectrometry, a second input means for entering second data of a dissociated ion of the ion measured by mass spectrometry, a first data storing means for storing third data of mass spectrometry of a plurality of candidates for the structure of ion, a calculation means for producing fourth data of mass spectrometry of dissociated ions to be used in analyzing the plurality of candidates and an evaluation means for evaluating the plurality of candidates by making comparisons between the first and third data and between the second and fourth data, so that the structure of ion can be identified.

Abstract: A main object is to cope with an unknown structure substance thereby to identify the structure of a parent ion highly precisely and to derive a supposed structure. A method for analyzing mass spectrometric data is disclosed, which: acquires mass spectrometric data on an ionized sample and dissociated ions dissociated from the sample as a parent ion; derives dissociated ion candidates by analyzing the molecular orbits on the candidates of the structures of the parent ion; and displays the analytical results of the parent ion candidates and the dissociated ion candidates and compares the data of the dissociated ion candidates and the data of dissociated ions actually measured, to evaluate the structures of the parent ion candidates.

Abstract: A valve encased nozzle device comprising a valve chamber having an introduction port for introducing pressurized liquid, and an opening for injecting the liquid, and a valve for closing and opening one or both of the introduction port and the injecting port, wherein the valve is disposed together with a valve driving mechanism in the valve chamber, whereby the introduction port or the injecting port or both are closed or opened by movement of the valve driven by the driving mechanism.

Abstract: A main object is to cope with an unknown structure substance thereby to identify the structure of a parent ion highly precisely and to derive a supposed structure. A method for analyzing mass spectrometric data is disclosed, which: acquires mass spectrometric data on an ionized sample and dissociated ions dissociated from the sample as a parent ion; derives dissociated ion candidates by analyzing the molecular orbits on the candidates of the structures of the parent ion; and displays the analytical results of the parent ion candidates and the dissociated ion candidates and compares the data of the dissociated ion candidates and the data of dissociated ions actually measured, to evaluate the structures of the parent ion candidates.

Abstract: A main object is to cope with an unknown structure substance thereby to identify the structure of a parent ion highly precisely and to derive a supposed structure. A method for analyzing mass spectrometric data is disclosed, which: acquires mass spectrometric data on an ionized sample and dissociated ions dissociated from the sample as a parent ion; derives dissociated ion candidates by analyzing the molecular orbits on the candidates of the structures of the parent ion; and displays the analytical results of the parent ion candidates and the dissociated ion candidates and compares the data of the dissociated ion candidates and the data of dissociated ions actually measured, to evaluate the structures of the parent ion candidates.

Abstract: This invention provides an inspection method and device which can efficiently measure the altitude distribution of a surface of a semiconductor device which is chemically and mechanically polished based on measured data at several points on the surface of the chip. In operation, exposure mask data for the semiconductor device is divided into arbitrary regions, in an arbitrary region j of the exposure mask data, &rgr;j=Pj/Sj which is a ratio between an area Sj of the region j and an area Pj of a portion in the region j where a pattern is present is calculated. An altitude Hj of the semiconductor after chemical mechanical polishing is obtained by a simulation which is performed using, as parameters, the ratio &rgr;j, a size h of a step on a surface of the semiconductor device before polishing, a polishing speed K, Young's modulus G of a polishing pad, a half-value width Rc of a stress function and a thickness d of the polishing pad.

Abstract: The object of the present invention is to provide a film thickness distribution analysis method that ensures quick and effective prediction of film thickness distribution by computer simulation in the pattern plating process.

Abstract: A plating method comprising using a plating solution containing an additive satisfying the following conditions:

Abstract: A plating method comprising using a plating solution containing an additive satisfying the following conditions: 0.005×h2/w<D/&kgr;<0.5×h2/w, and 0.01≦&THgr;≦0.

Abstract: An object of the present invention is to provide a semiconductor device and a method of manufacturing the semiconductor device which can improve the flatness after the chemical mechanical polishing by inserting necessary and minimum dummy patterns and has high throughput.

Abstract: An object of the present invention is to provide a semiconductor device and a method of manufacturing the semiconductor device which can improve the flatness after the chemical mechanical polishing by inserting necessary and minimum dummy patterns and has high throughput.