Patents by Inventor Kinya Usuda
Kinya Usuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7305275Abstract: In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.Type: GrantFiled: March 27, 2003Date of Patent: December 4, 2007Assignee: Ebara CorporationInventors: Kunihiro Miyazaki, Soichi Nadahara, Kinya Usuda, Masaji Akahori, Sota Nakagawa, Ken Nakajima
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Publication number: 20050177273Abstract: In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.Type: ApplicationFiled: March 27, 2003Publication date: August 11, 2005Applicant: Ebara CorporationInventors: Kunihiro Miyazaki, Soichi Nadahara, Kinya Usuda, Masaji Akahori, Sota Nakagawa, Ken Nakajima
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Patent number: 5051338Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.Type: GrantFiled: November 27, 1989Date of Patent: September 24, 1991Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Yoshihide Kato, Kei Kirita, Toshiaki Shinozaki, Fumiaki Shigemitsu, Kinya Usuda, Takashi Tsuchiya
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Patent number: 4976810Abstract: Prior to etching by an etchant, a low concentration solution of cerium ammonium nitrate [(NH.sub.4).sub.2 Ce(NO.sub.5).sub.6 ] is caused to adhere onto an electron-beam resist pattern, thus to improve hydrophilic property of the resist pattern. As a result, a metal thin film is etched in conformity with the resist pattern. Thus, a fine pattern of the metal thin film is provided.Type: GrantFiled: March 6, 1990Date of Patent: December 11, 1990Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Masuda, Fumiaki Shigemitsu, Kinya Usuda
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Patent number: 4897337Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.Type: GrantFiled: October 15, 1987Date of Patent: January 30, 1990Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Yoshihide Kato, Kei Kirita, Toshiaki Shinozaki, Fumiaki Shigemitsu, Kinya Usuda, Takashi Tsuchiya
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Patent number: 4840874Abstract: A method of forming a resist pattern on a substrate such as a mask substrate for use in manufacturing semiconductor devices or a semiconductor substrate at the intermediate step for manufacturing semiconductor devices includes the steps of baking a resist coated on the substrate at a temperature in its Tg region (glass transition temperature region) or higher temperature, and annealing the resist at a temperature within the Tg region.Type: GrantFiled: September 22, 1987Date of Patent: June 20, 1989Assignee: Kabushiki Kaisha ToshibaInventors: Fumiaki Shigemitsu, Kinya Usuda, Tatsuo Nomaki
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Patent number: 4755442Abstract: A resist is coated on a photomask and a predetermined pattern is exposed on the resist. The photomask is dipped in a developing solution together with an electrode which exhibits a stable potential in the developing solution, so that a change in current flowing between the photomask and the electrode is detected on the basis of a change in capacitance between the photomask and the developing solution, while developing the pattern formed on the resist. The current abruptly changes (e.g., exhibits its peak) around the time at which the resist is removed and a chromium underlying layer of the photomask is exposed. The time obtained by multiplying the time until the change appears by a predetermined coefficient is regarded as the time corresponding to the end of the developing step.Type: GrantFiled: August 11, 1986Date of Patent: July 5, 1988Assignee: Kabushiki Kaisha ToshibaInventors: Hiroyuki Hasebe, Masayuki Suzuki, Yasuo Matsuoka, Takashi Tsuchiya, Kinya Usuda
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Patent number: 4745422Abstract: An automatic developing apparatus comprises a developing tank and a pipe for introducing a developing solution into the developing tank. The developing tank is constituted by a stage on which a substrate is to be set, and a processing case movable relative to the stage, to receive said stage.Type: GrantFiled: November 17, 1986Date of Patent: May 17, 1988Assignee: Kabushiki Kaisha ToshibaInventors: Yasuo Matsuoka, Kinya Usuda, Michiro Takano
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Patent number: 4717645Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.Type: GrantFiled: October 22, 1985Date of Patent: January 5, 1988Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Yoshihide Kato, Kei Kirita, Toshiaki Shinozaki, Fumiaki Shigemitsu, Kinya Usuda, Takashi Tsuchiya