Abstract: A method and apparatus are provided to detect a threshold-error of a multi-level signal-under-test. In one aspect of the disclosure, a digital test sequence may be used to produce the signal-under-test. In one aspect, the digital test sequence may be mapped to M binary reference sequences, wherein M is greater than one. In one aspect, each of the M binary reference sequences may be associated with a voltage threshold and a received signal may be bit-compared with each threshold. In one aspect, a threshold-error may be counted when a bit of a binary reference sequence does not match the corresponding bit-compare result. In one aspect, an instrument is provided that compares a received amplitude to a plurality of thresholds at one sample time.

Abstract: A method and apparatus are provided to detect a threshold-error of a multi-level signal-under-test. In one aspect of the disclosure, a digital test sequence may be used to produce the signal-under-test. In one aspect, the digital test sequence may be mapped to M binary reference sequences, wherein M is greater than one. In one aspect, each of the M binary reference sequences may be associated with a voltage threshold and a received signal may be bit-compared with each threshold. In one aspect, a threshold-error may be counted when a bit of a binary reference sequence does not match the corresponding bit-compare result. In one aspect, an instrument is provided that compares a received amplitude to a plurality of thresholds at one sample time.

Abstract: A dual-metal-trench silicon carbide Schottky pinch rectifier having a plurality of trenches formed in an n-type SiC substrate, with a Schottky contact having a relatively low barrier height on a mesa defined between adjacent ones of the trenches, and a Schottky contact having a relatively high barrier height at the bottom of each trench. The same metal used for the Schottky contact in each trench is deposited over the Schottky contact on the mesa. A simplified fabrication process is disclosed in which the high barrier height metal is deposited over the low barrier height metal and then used as an etch mask for reactive ion etching of the trenches to produce a self-aligned low barrier contact.