Abstract: Provided is a polyester film for foldable displays that is unlikely to have cracks in the folding portion with the aim of providing a foldable display that is excellent in mass production applicability, and that does not have image distortion that may appear in the folding portion after the display is repeatedly folded. The polyester film has a thickness of 10 to 80 ?m, a refractive index in the bending direction of 1.590 to 1.620, a refractive index in the direction of a folding portion of 1.670 to 1.700, a refractive index in the thickness direction of 1.520 or less, and a density of 1.380 g/cm3 or more, wherein the bending direction refers to a direction orthogonal to the folding portion of the polyester film to be folded.

Abstract: Provided is a foldable display that is excellent in mass production applicability and unlikely to have image distortion at the folding portion of the display after repeated folding, as well as a mobile device equipped therewith. The foldable display contains a surface protection film and a polarizer. The surface protection film is composed of a polyester film, and the angle made by the slow axis of the polyester film with the absorption axis of the polarizer is 10 to 80°. The polyester film has a refractive index in the bending direction of 1.590 to 1.620, a refractive index in the direction of a folding portion of 1.670 to 1.700, a refractive index in the thickness direction of 1.520 or less, and a density of 1.380 g/cm3 or more, wherein the bending direction refers to a direction orthogonal to the folding portion of the polyester film to be folded.

Abstract: An information processing apparatus includes a data acquisition unit, a simulation execution unit, and an optimization unit. The data acquisition unit acquires execution result data including an execution result of the substrate processing based on a process parameter including a pressure in the substrate processing apparatus and including sensor data of the pressure in the substrate processing apparatus. The simulation execution unit inputs the execution result data into a simulation model pre-stored in a storage to calculate a pressure in the substrate processing apparatus that is predicted to approach a target value for a substrate processing result. The optimization unit calculates a predicted value of the substrate processing result based on the process parameter including the calculated pressure.

Abstract: A film forming method for forming a silicon nitride film on a substrate, includes supplying a silicon-containing gas into a processing chamber accommodating the substrate, and after the supplying the silicon-containing gas, supplying a nitrogen-containing gas into the processing chamber accommodating the substrate. An internal pressure of the processing chamber during the supplying the nitrogen-containing gas is set higher than an internal pressure of the processing chamber during the supplying the silicon-containing gas.

Abstract: A deposition method includes preparing a substrate having a recess. The deposition method includes supplying a first gas onto the substrate to deposit a boron nitride film in the recess, the first gas including a boron-containing gas and a nitrogen-containing gas. The deposition method includes supplying a second gas onto the substrate to heat-treat the boron nitride film, the second gas being free of the boron-containing gas and including the nitrogen-containing gas.

Abstract: A substrate processing method for forming a nitride film on a substrate, includes: a raw material gas supply step of supplying a raw material gas containing an element to be nitrided; a hydrogen gas supply step of, after the raw material gas supply step, supplying a hydrogen gas activated by plasma; a thermal nitriding step of supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element; and a plasma nitriding step of supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element.

Abstract: A method for forming a film, the method including: forming a SiCN seed layer on a substrate by a thermal ALD, forming a SiN protective layer on the SiCN seed layer by a thermal ALD, and forming a SiN bulk layer on the SiN protective layer by a plasma enhanced ALD.

Abstract: A plasma generating apparatus includes: an electrode pair including a first plasma electrode and a second plasma electrode that are arranged to face each other; an RF power supply that supplies an RF power to the electrode pair; and a matching unit provided between the RF power supply and the electrode pair. The matching unit includes: a first variable capacitor and a second variable capacitor that are connected in parallel with respect to a load between the electrode pair; a coil connected in series with the first plasma electrode; and a capacitor connected in series with the second plasma electrode.

Abstract: A substrate processing method for forming a nitride film on a substrate, includes: a raw material gas supply step of supplying a raw material gas containing an element to be nitrided; a hydrogen gas supply step of, after the raw material gas supply step, supplying a hydrogen gas activated by plasma; a thermal nitriding step of supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element; and a plasma nitriding step of supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element.