Abstract: The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer 10a having a thickness of 100 ?m-450 ?m is formed on the inner periphery side of an initial melt line zone 10 which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer 10b having a thickness of 100 ?m or more and bubbles with an average diameter of 20 ?m-60 ?m is formed outside the above-mentioned first substantially bubble-free layer 10a, and a second substantially bubble-free layer 10c having a thickness of 300 ?m or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone 10.

Abstract: The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer 10a having a thickness of 100 ?m-450 ?m is formed on the inner periphery side of an initial melt line zone 10, which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer 10b having a thickness of 100 ?m or more and bubbles with an average diameter of 20 ?m-60 ?m is formed outside the above-mentioned first substantially bubble-free layer 10a, and a second substantially bubble-free layer 10c having a thickness of 300 ?m or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone 10.

Abstract: A silica glass crucible 1 having &agr; of 0.05 or less over a thickness of 0.5 mm or more from the inner surface of the silica glass crucible, &agr; being obtained by dividing the fluorescent intensity integrated over a wavelength range of 4,000 cm−1 and 4,100 cm−1 by the fluorescent intensity integrated at a wavelength of 800 cm−1 where an SiO peak appears as determined by subjecting a section of the thickness of the silica glass crucible to laser Raman spectroscopy involving excitation by laser beam of 514 nm, and an OH group concentration of 100 ppm or less over the entire periphery beyond a thickness of at least 1.0 mm from the inner surface of the silica glass crucible.

Abstract: The invention is to offer such a carbon electrode of less consumption and a long useful life and a method of fabricating the same which prevents particles from falling from carbon electrodes into a melting quartz glass, checks occurrence of bubbles in the quartz glass, and avoids lowering of single crystallizing yield by bubbles existing in a transparent layer formed in the vicinity of an inside surface of a quartz glass crucible when lifting silicon single crystal by using the quartz glass crucible made by using the carbon electrodes. The carbon electrode to be used for melting quartz glass by an arc discharge, is characterized in that an electrode material is composed of carbon of bulk density being 1.80 g/cm3 or higher and a three-point bending strength being 35 MPa or higher.