Abstract: The present invention relates to a process for forming an electronic circuit, which comprises coating a polyorganosilane on at least one surface of a substrate for forming an electronic circuit, followed by drying to form a solid state polysilane thin film, masking a portion for forming a circuit of said thin film and oxidizing a remaining portion to form an insulating portion, and then doping an oxidizing substance to the portion subjected to masking to form a conductive portion, and in order to oxidize a partial portion of the thin film, said thin film is irradiated with UV light in the presence of oxygen, preferably, in the oxidizing step, by carrying out partial oxidation while controlling an oxidation degree, the remaining portion is converted into three or more kinds of portions having different volume resistivities.

Abstract: A treatment agent for inorganic siliconaceous fillers has as its main ingredient an organosilicon compound of general fomrula (I): ##STR1## in which X represents a functional group selected from among H.sub.2 NCH.sub.2 CH.sub.2 --, H.sub.2 NCH.sub.2 CH.sub.2 CH.sub.2 --, ##STR2## Y.sup.1 is CH.sub.2 .dbd.CHCH.sub.2 -- or --CH.sub.2 CH.sub.2 CH.sub.2 SiR.sub.n.sup.1 Z.sub.3-n.sup.1, R.sup.1 is a substituted or nonsubstituted monovalent hydrocarbon group, Z.sup.1 is an alkoxy group having 1-6 carbon atoms and n is an integer from 0-2, or of general formula (II): ##STR3## in which Y.sup.2 is ##STR4## --CH.sub.2 CH.sub.2 CH.sub.2 SiR.sub.m.sup.2 Z.sub.3-m.sup.2 or a substitutent or nonsubstituted monovalent hydrocarbon group, Z.sup.2 is an alkoxy group having 1-6 carbon atoms and m is an integer from 0-2.

Abstract: An organosilicon compound which contains a highly reactive (meth)acrylamide and a siloxane group with a molecule has the following formula: ##STR1## where R.sup.1 is a methyl group or hydrogen atom, R.sup.2 is a substituted or unsubstituted monovalent hydrocarbon group, Q is a divalent hydrocarbon group having 1-8 carbon atoms, A is a hydrogen atom, substituted or unsubstituted hydrocarbon carbon group or --QSiR.sup.n.sup.2 [OSi(CH.sub.3).sub.3 ].sub.3-n, and n is an integer from 0-2.