Abstract: An image acquisition apparatus includes an image pickup device that includes a plurality of pixels, and a filter layer that blocks propagation of an incident light ray which comes from an object side to the pixel side in accordance with an increase in incident angle of the incident light ray.

Abstract: An image acquisition apparatus includes an image pickup device that includes a plurality of pixels, and a filter layer that blocks propagation of an incident light ray which comes from an object side to the pixel side in accordance with an increase in incident angle of the incident light ray.

Abstract: A semiconductor light-emitting device according to an embodiment of the present invention includes chip LEDs formed on a silicon submount, in which a wiring pattern having a chip connecting terminal portion connecting the chip LEDs, an external connecting terminal portion connecting an external unit, and a plurality of lead portions connecting a corresponding chip connecting terminal portion and a corresponding external connecting terminal portion is formed on the silicon submount, and an area of the chip connecting terminal portions is made larger than an area of a region where the chip connecting terminal portion overlaps with the chip LEDs. Accordingly, a semiconductor light-emitting device of high heat radiation property and heat resistance can be provided.

Abstract: A semiconductor device has peripheral electrode pads formed on the periphery of a semiconductor chip, land pads comprising the first land pads and the second land pads formed on the semiconductor chip, and circuits formed in the semiconductor chip. The peripheral electrode pads are connected to internal circuits by internal lines. The first land pads are connected to the peripheral electrode pads by rewired lines. The second electrode pads, on the other hand, are connected to the internal circuits by internal electrode pads and internal lines, not by the peripheral electrode pads.

Abstract: A semiconductor light-emitting device according to an embodiment of the present invention includes chip LEDs formed on a silicon submount, in which a wiring pattern having a chip connecting terminal portion connecting the chip LEDs, an external connecting terminal portion connecting an external unit, and a plurality of lead portions connecting a corresponding chip connecting terminal portion and a corresponding external connecting terminal portion is formed on the silicon submount, and an area of the chip connecting terminal portions is made larger than an area of a region where the chip connecting terminal portion overlaps with the chip LEDs. Accordingly, a semiconductor light-emitting device of high heat radiation property and heat resistance can be provided.

Abstract: When an IC card module is used for a small portable information apparatus such as a portable telephone terminal, the module has a size much smaller than an ordinary IC card from the viewpoint that the apparatus is required to be small in size and weight. In the case of a small non-contact type card, there are problems that an antenna coil cannot secure its necessary surface area, a necessary power cannot be obtained for a signal to be transmitted or received, a communication distance from an external device becomes small. When the signal is transmitted and received via a booster coil provided between the external device and the antenna coil of the IC card module, the effective surface area of the antenna coil can be increased and the communication distance can be increased to a level as large as it can practically avoid involvement of any problem.

Abstract: A semiconductor chip of rewiring layer-integral type capable of preventing a maloperation by noise and a deterioration of communication characteristics and a semiconductor device with excellent communication characteristics; the semiconductor chip, wherein a rewiring layer (3) is formed on a circuit formed surface (1a) through an insulating layer (2) so as to form an antenna coil (4) with the rewiring layer (3), the antenna coil (4) is formed around the periphery of an analog circuit (21) on the circuit formed surface (1a) by avoiding forming on the analog circuit (21), the analog circuit (21) may be formed by collecting analog circuits to be formed in the semiconductor chip (1A) therein, may be one of the particularly noise-susceptible analog circuits such as a power circuit, a calculation amplifier, a comparison amplifier, an RF receiving part, an RF transmitting part, an RF synthesizer part, and a voltage build-up circuit and an amplifying circuit forming a part of a memory part, or may be a coil provided

Abstract: A camera module includes a lens 11, an optical tube 12 for supporting the lens 1, and an image sensor chip 2 for outputting image signals based on the light coming through the lens 11. The optical tube 12 is attached to the image sensor chip 2. The image sensor chip 2 has a sensor portion 21 and a logic circuit portion 22 on one surface thereof, and the optical tube 12 is attached to the logic circuit portion 22. In this structure, a camera module can be downsized and achieve high focus accuracy.

Abstract: A semiconductor device has peripheral electrode pads formed on the periphery of a semiconductor chip, land pads comprising the first land pads and the second land pads formed on the semiconductor chip, and circuits formed in the semiconductor chip. The peripheral electrode pads are connected to internal circuits by internal lines. The first land pads are connected to the peripheral electrode pads by rewired lines. The second electrode pads, on the other hand, are connected to the internal circuits by internal electrode pads and internal lines, not by the peripheral electrode pads.

Abstract: For producing a semiconductor module, an electrically insulating layer and an electrically conductive layer are formed on a Nickel-base metal film over a metallic surface, the electrically conductive layer is connected electrically to an electric element through an electrically conductive joint arranged between the electric element and the electrically conductive layer, at least a part of the electric element and at least a part of the electrically conductive joint are covered with a molding resin, and subsequently, the Nickel-base metal film is removed from the metallic surface so that a combination of the Nickel-base metal film, the electrically insulating layer, the electrically conductive layer, the electrically conductive joint and the molding resin is separated from the metallic surface.

Abstract: When an IC card module is used for a small portable information apparatus such as a portable telephone terminal, the module has a size much smaller than an ordinary IC card from the viewpoint that the apparatus is required to be small in size and weight. In the case of a small non-contact type card, there are problems that an antenna coil cannot secure its necessary surface area, a necessary power cannot be obtained for a signal to be transmitted or received, a communication distance from an external device becomes small. When the signal is transmitted and received via a booster coil provided between the external device and the antenna coil of the IC card module, the effective surface area of the antenna coil can be increased and the communication distance can be increased to a level as large as it can practically avoid involvement of any problem.

Abstract: In a semiconductor device for treating signals of frequency not less than 800 MHz, a minimum thickness of an electrically conductive wire connecting a semiconductor electric circuit in the semiconductor device to an electric member other than the semiconductor device is determined along the following formula: 2 * 2 ω ⁢   ⁢ μ ⁢   ⁢ κ < h when h is the minimum thickness of the electrically conductive wire, &kgr; is an electrical conductivity of the electrically conductive wire, &mgr; is a magnetic permeability of the electrically conductive wire, &ohgr; is an angular frequency of the signals transmitted through the electrically conductive wire.

Abstract: For producing a semiconductor module, an electrically insulating layer and an electrically conductive layer are formed on a Nickel-base metal film over a metallic surface, the electrically conductive layer is connected electrically to an electric element through an electrically conductive joint arranged between the electric element and the electrically conductive layer, at least a part of the electric element and at least a part of the electrically conductive joint are covered with a molding resin, and subsequently, the Nickel-base metal film is removed from the metallic surface so that a combination of the Nickel-base metal film, the electrically insulating layer, the electrically conductive layer, the electrically conductive joint and the molding resin is separated from the metallic surface.

Abstract: For producing a semiconductor module, an electrically insulating layer and an electrically conductive layer are formed on a Nickel-base metal film over a metallic surface, the electrically conductive layer is connected electrically to an electric element through an electrically conductive joint arranged between the electric element and the electrically conductive layer, at least a part of the electric element and at least a part of the electrically conductive joint are covered with a molding resin, and subsequently, the Nickel-base metal film is removed from the metallic surface so that a combination of the Nickel-base metal film, the electrically insulating layer, the electrically conductive layer, the electrically conductive joint and the molding resin is separated from the metallic surface.

Abstract: A semiconductor chip of rewiring layer-integral type capable of preventing a maloperation by noise and a deterioration of communication characteristics and a semiconductor device with excellent communication characteristics; the semiconductor chip, wherein a rewiring layer (3) is formed on a circuit formed surface (1a) through an insulating layer (2) so as to form an antenna coil (4) with the rewiring layer (3), the antenna coil (4) is formed around the periphery of an analog circuit (21) on the circuit formed surface (1a) by avoiding forming on the analog circuit (21), the analog circuit (21) may be formed by collecting analog circuits to be formed in the semiconductor chip (1A) therein, may be one of the particularly noise-susceptible analog circuits such as a power circuit, a calculation amplifier, a comparison amplifier, an RF receiving part, an RF transmitting part, an RF synthesizer part, and a voltage build-up circuit and an amplifying circuit forming a part of a memory part, or may be a coil provided

Abstract: In a semiconductor device for treating signals of frequency not less than 800 MHz, a minimum thickness of an electrically conductive wire connecting a semiconductor electric circuit in the semiconductor device to an electric member other than the semiconductor device is determined along the following formula: 1 2 * 2 ω ⁢   ⁢ μ ⁢   ⁢ κ < h

Abstract: A display apparatus capable of receiving and displaying video signals which differ in scanning frequencies or resolutions. The display apparatus includes an input section for receiving at least one video signal and a conversion unit for converting at least one of the frequency and resolution of the at least one received video signal so as to be within predetermined higher ranges thereof. A display unit enables display of the converted received at least one video signal.

Abstract: For producing a semiconductor module, an electrically insulating layer and an electrically conductive layer are formed on a Nickel-base metal film over a metallic surface, the electrically conductive layer is connected electrically to an electric element through an electrically conductive joint arranged between the electric element and the electrically conductive layer, at least a part of the electric element and at least a part of the electrically conductive joint are covered with a molding resin, and subsequently, the Nickel-base metal film is removed from the metallic surface so that a combination of the Nickel-base metal film, the electrically insulating layer, the electrically conductive layer, the electrically conductive joint and the molding resin is separated from the metallic surface.

Abstract: The present invention is a color correction system including an imaging apparatus which inputs or outputs an image signal from a signal processor into or from an image device such as an input device such as a scanner or a camera or an output device such as a display device or a print device and which is constituted so as to correct colors by inputting or outputting image signals via a color converter, the conversion characteristic of which can be controlled according to a variation in the setting status or use environment of the imaging apparatus and faithful color reproduction can be realized between a plurality of imaging apparatuses having different characteristics.

Abstract: A display apparatus capable of receiving and displaying video signals which differ in scanning frequencies or resolutions. The display apparatus includes an input section for receiving at least one video signal and a conversion unit for converting at least one of the frequency and resolution of the at least one received video signal so as to be within predetermined higher ranges thereof. A display unit enables display of the converted received at least one video signal.