Abstract: Provided is an ion generating apparatus. The ion generating apparatus includes opposed electrodes connected to a high-frequency power supply, and hence, even in a case where a cathode filament is broken, hydride gas can be ionized to generate hydrogen ion. Thus, a fluorine compound deposited in a source housing is reduced in vacuum, and gas containing fluorine generated due to the above-mentioned reduction reaction is discharged with a vacuum pump.

Abstract: Provided is an ion generating apparatus. The ion generating apparatus includes opposed electrodes connected to a high-frequency power supply, and hence, even in a case where a cathode filament is broken, hydride gas can be ionized to generate hydrogen ion. Thus, a fluorine compound deposited in a source housing is reduced in vacuum, and gas containing fluorine generated due to the above-mentioned reduction reaction is discharged with a vacuum pump.

Abstract: Provided is a method of evaluating dielectric breakdown by applying a current to an insulating film, in which measurement for a forward direction current and measurement for a backward direction current are performed in a short period of time. For this purpose two MOS diodes in which an electrode of one MOS diode and a base of another MOS diode are short-circuited respectively are prepared to form a circuit to which the current is applied, providing current flow in one insulating film reverse to current flow in another insulating film, which enables the application of both the forward direction current and the backward direction current.

Abstract: Provided is an optical inspection system for a semiconductor wafer, by which a threshold value optimal for inspection can be determined and optical inspection of each chip can be performed based on the threshold value, by obtaining in advance a table indicating a relation between a film thickness of a thin film in specific positions in the wafer and a gradation value for each sample area in the chip, measuring the film thickness of the thin film in the specific positions of the wafer to be inspected before inspecting the chip, and comparing the measured film thickness with the gradation value in the table.

Abstract: Provided is a method of evaluating dielectric breakdown by applying a current to an insulating film, in which measurement for a forward direction current and measurement for a backward direction current are performed in a short period of time. For this purpose two MOS diodes in which an electrode of one MOS diode and a base of another MOS diode are short-circuited respectively are prepared to form a circuit to which the current is applied, providing current flow in one insulating film reverse to current flow in another insulating film, which enables the application of both the forward direction current and the backward direction current.

Abstract: Provided is a visual inspection apparatus for a semiconductor wafer, by which a threshold value optimal for inspection can be determined and visual inspection of each chip can be performed based on the threshold value, by obtaining in advance a table indicating a relation between a film thickness of a thin film in specific positions in the wafer and a gradation value for each sample area in the chip, measuring the film thickness of the thin film in the specific positions of the wafer to be inspected before inspecting the chip, and comparing the measured film thickness with the gradation value in the table.

Abstract: A method of judging whether dielectric breakdown of an insulating film in a semiconductor device has occurred due to the application of a current to the insulating film. A voltage Vi is measured by applying a current Ii to the insulating film for an arbitrary time period. Next, a voltage Vi+1 is measured by applying a current Ii+1 (|Ii+1|≧|Ii|) to the insulating film for an arbitrary time period. Then, the voltage Vi is compared with the voltage Vi+1 to find a difference between therebetween. One of the various judgment conditions is used (where Vcheck is set at an arbitrary value) and it is judged that dielectric breakdown of the insulating film has occurred if the judgment condition is satisfied by the difference between Vi and Vi+1.

Abstract: Disclosed is an apparatus that suppresses changes in a temperature distribution in a wafer caused by changes in the light transmittance of a process tube of a lamp annealing furnace. A transmission type sensor including a light emitting section and a light receiving section is arranged so that a process tube is sandwiched between the light emitting section and the light receiving section. The transmission type sensor measures the light transmittance of the process tube, so that it becomes possible to determine when the process tube needs changing. Also, by using a plurality of transmission type sensors and performing feedback control of power of lamps according to measurement results of the transmission type sensors, it becomes possible to suppress changes in the temperature distribution in a wafer.

Abstract: Disclosed is an apparatus that suppresses changes in a temperature distribution in a wafer caused by changes in the light transmittance of a process tube of a lamp annealing furnace. A transmission type sensor including a light emitting section and a light receiving section is arranged so that a process tube is sandwiched between the light emitting section and the light receiving section. The transmission type sensor measures the light transmittance of the process tube, so that it becomes possible to determine when the process tube needs changing. Also, by using a plurality of transmission type sensors and performing feedback control of power of lamps according to measurement results of the transmission type sensors, it becomes possible to suppress changes in the temperature distribution in a wafer.

Abstract: Disclosed is a method of judging whether dielectric breakdown of an insulating film used in a semiconductor device occurs due to the application of a current to the insulating film. A voltage Vi is measured by applying a current Ii to the insulating film for an arbitrary time period. Next, a voltage Vi+1 is measured by applying a current Ii+1 (|Ii+1| |Ii|) to the insulating film for an arbitrary time period. Then, the voltage Vi is compared with the voltage Vi+1 to find a difference between these voltages. One of the following judgment conditions is used (where Vcheck is set at an arbitrary value) and it is judged that there occurs dielectric breakdown of the insulating film if the judgment condition is satisfied by the found difference.