Abstract: A semiconductor non-volatile optical memory device is constructed by providing light-permeable charge retention means in an insulating layer on a first semiconductor surface into which photo-generated carriers in the surface of the first semiconductor region are injected over the semiconductor-insulator potential barrier by applying reverse bias between the first semiconductor region and a second region forming a rectifying junction with the first semiconductor region. Also disclosed in a non-volatile memory integrated circuit employing one or more of said devices together with light source in the same package. The non-volatile memory integrated circuit operates under low bias voltage and is compatible with a high speed integrated logic circuits.