Abstract: The transdermal administration device of the present invention includes: a needle support with a plurality of microneedles formed at a tip portion thereof; a holder with the needle support placed therein, allowing the needle support to protrude itself therefrom and retract therein; and a cap for covering the microneedles, and further includes: a spring member placed between the needle support and the holder, for biasing the needle support in a protruding direction; an engaging portion at a base of the needle support; and an engaged portion capable of engaging the engaging portion, formed in the holder, where the engaging portion of the needle support can be locked with the engaged portion of the holder when the needle support is retracted in the holder.

Abstract: The transdermal administration device of the present invention includes: a needle support with a plurality of microneedles formed at a tip portion thereof; a holder with the needle support placed therein, allowing the needle support to protrude itself therefrom and retract therein; and a cap for covering the microneedles, and further includes: a spring member placed between the needle support and the holder, for biasing the needle support in a protruding direction; an engaging portion at a base of the needle support; and an engaged portion capable of engaging the engaging portion, formed in the holder, where the engaging portion of the needle support can be locked with the engaged portion of the holder when the needle support is retracted in the holder.

Abstract: Accordingly to an exemplary embodiment of the present invention, a high tensile strength, refractory steel can be provided which comprises, in mass %, approximately C: 0.04 to 0.14%, Si: 0.50% or less, Mn: 0.50 to 2.00%, P: 0.020% or less, S: 0.010% or less, Nb: 0.01 to 0.05%, Mo: 0.30% or more and less than 0.70%, Al: 0.060% or less, N: 0.0010 to 0.0060%, and the balance consisting of iron and unavoidable impurities. For example, a weld crack sensitive composition PCM can be defined by the following equation may be about 0.25% or less: PCM=C+Si/30+Mn/20+Cu/20+Ni/60+Cr/20+Mo/15+V/10+5B. An area fraction of polygonal ferrite or pseudo polygonal ferrite in a ¼ thick position in the plate thickness direction of the steel plate of the final rolling product is about 10% or less.

Abstract: A thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof. The thin-film structural body allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker. The thin-film member forms a mass body and, beams and fixed electrodes of the semiconductor acceleration sensor are constituted by a plurality of doped polysilicon thin-films that are laminated by performing a step of film deposition of polysilicon while, for example, phosphorous is being doped as impurities plural times.

Abstract: A main object of the present invention is to provide a manufacturing method of a thin-film structural body removing a sacrifice film without removing other insulating films. In order to achieve the above-mentioned object, upon forming an anchor hole (52) which forms an opening on the surface of a wiring (45), two etching steps are employed on a sacrifice film (51). In the first etching step, the sacrifice film (51) is partially removed by a dry etching process with an anisotropy above a wiring (45) with the sacrifice film (51) being left. In the second etching step, the remaining sacrifice film (51) above the wiring (45) is removed by a wet etching process with an isotropic.

Abstract: An acceleration sensor which is inexpensive and accomplishes its small-size and light-weight structure, and a manufacturing method thereof. A sensor unit provided on a base is sealed by a cap joined to a frame portion of the base in an eutectic manner. The cap includes a cap main body made of a semiconductor material having a conductive property and a metal film provided on the circumferential edge of the cap main body. The frame portion includes a frame main body made of doped polysilicon, a diffusion preventive film selectively provided on the frame main body, and a joining layer. The joining layer has one area as a conductive portion made of a conductive material, and another area as a joining portion made of a semiconductor.

Abstract: A manufacturing method of a thin-film structural body, capable of preparing a thin-film structural body by using a sacrifice film without any protruding part on its surface, thereby preparing a thin-film structural body having high strength and reliability. After a sacrifice film is formed with a film thickness greater than a predetermined value, the surface of the sacrifice film is ground so that the surface of the sacrifice film is flattened with the film thickness of the sacrifice film being adjusted to the predetermined value. Thus, the influence of the surface irregularity of a substrate is eliminated and the surface of the sacrifice film is flattened. Thereby, a mass body, beams and fixed electrodes of a semiconductor acceleration sensor are prepared by using the sacrifice film.

Abstract: A substrate is provided with a substrate main body made from silicon, and an oxide film for a base formed thereon. The oxide film includes a first oxide film made mainly of a thermal SiO2 film formed by thermally oxidizing silicon in the substrate main body, and a second oxide film made of a high-temperature oxide film deposited and formed thereon. Alternatively the second oxide film may be formed by TEOS.

Abstract: A manufacturing method of an electrode structure and a thin-film structural body, which can remove a sacrifice film without removing other insulating films. An anchor hole which provides an opening to the surface of a wiring is covered with a sacrifice film and a nitride film. The anchor hole is constituted by a hole section formed in the nitride film and an opening of the sacrifice film. The hole section is opened to enter the wiring inward from an edge of the surface of the wiring by a first predetermined distance. The opening is opened to retreat from the hole section by a second predetermined distance. The existence of the first and second predetermined distances makes it possible to lengthen the entering distance to the oxide film of etchant to be used for removing the sacrifice film.

Abstract: The present invention relates to a manufacturing method of a thin-film structural body which is formed by using a semiconductor processing technique, and an object thereof is to provide a manufacturing method of a thin-film structural body, capable of reducing a stress difference exerted between a sacrifice film and a substrate upon thermal shrinkage. In order to achieve this object, a sacrifice film (51), which is formed on a substrate (1), is formed by using a PSG film in which the concentration of phosphorus is set to a value which is greater than 3 mol %, and also smaller than 4 mol %. After a thin-film layer (53) has been formed thereon and after the thin-film layer (53) has been patterned, the sacrifice film (51) is removed by an etching process.

Abstract: A main object of the present invention is to provide a manufacturing method of a thin-film structural body removing a sacrifice film without removing other insulating films.

Abstract: The present invention relates to a substrate and a manufacturing method thereof as well as a thin-film structural body, and an object thereof is to provide a substrate capable of reducing a stress difference generating between an oxide film on the substrate and another film formed on the oxide film upon thermal shrinkage and also shortening the time required for film formation at the time of forming a thick oxide film, and a manufacturing method thereof as well as a thin-film structural body.

Abstract: A main object of the present invention is to provide a manufacturing method of an electrode structure and a thin-film structural body, which can remove a sacrifice film without removing other insulating films.

Abstract: The present invention relates to a manufacturing method of a thin-film structural body which is formed by using a semiconductor processing technique, and an object thereof is to provide a manufacturing method of a thin-film structural body, capable of reducing a stress difference exerted between a sacrifice film and a substrate upon thermal shrinkage.

Abstract: The present invention relates to a thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly in a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof, an object of the present invention is to provide a thin-film structural body which allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker, and a manufacturing method thereof.

Abstract: An object of the present invention is to provide a manufacturing method of a thin-film structural body, capable of preparing a thin-film structural body by using a sacrifice film without any protruding part on its surface, thereby preparing a thin-film structural body having high strength and reliability.

Abstract: An object of the present invention is to provide an acceleration sensor which is inexpensive and accomplishes its small-size and light-weight structure, and a manufacturing method thereof.

Abstract: A pressure sensor element (50) is bonded to a die bonding pad (4). The pressure sensor element (50) is thereafter entirely covered with epoxy resin (11) and completely packaged. Following this, the epoxy resin (11) is locally removed at a portion above a diaphragm (5) of the pressure sensor element (50). As a result, the diaphragm (5) is exposed. In this method, the diaphragm (5) is uncovered without using a special metallic mold which prohibits the epoxy resin (11) from flowing into a space above the diaphragm (5). A gold wire (8) is also molded by the package sealing. Thus, a resulting package-molded pressure sensing semiconductor device is highly reliable under adverse environmental conditions and considerably cost-effective.

Abstract: A semiconductor pressure sensor has a semiconductor pressure sensing element sensitive to pressure and a hollow package accommodating the semiconductor pressure sensing element. The semiconductor pressure sensor also has a first lead frame portion having a displaced die pad to which the semiconductor pressure sensor is die bonded and a plurality of suspension leads through which the die pad is suspended at its opposing sides. The semiconductor pressure sensor also has a second lead frame portion having a plurality of suspension leads which provide electrical connections between the semiconductor pressure sensing element and external devices. The package includes a resin base accommodating the semiconductor pressure sensing element fixed to the die pad and a resin cap bonded to the resin base with the first and second lead frame portions sandwiched therebetween with the die pad suspended in the resin base and the plurality of leads extending outwardly from the package.

Abstract: A method of manufacturing a semiconductor acceleration includes oxidizing a silicon wafer, removing the oxide film and underlying silicon in a U-shaped pattern at a front surface of the wafer by etching to form a portion that is to become a cantilever, depositing a thin metal film covering the U-shaped pattern that is to become the cantilever, etching a recessed portion in the rear surface of the silicon wafer encompassing the U-shaped pattern, thereby forming the cantilever, dicing the silicon wafer into chips, and removing at least part of the thin metal film, thereby releasing the cantilever.